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    75307

    Abstract: PTB23001X PTB23003X PTB23005X T-33-O
    Text: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T ­ 3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


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    iki53ci31 DG15Cm PTB23001X PTB23003X PTB23005X G01S1Q3 PTB23001X 75307 PTB23005X T-33-O PDF