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    DG858BW Search Results

    DG858BW Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DG858BW45 Dynex Gate Turn-off Thyristor Original PDF

    DG858BW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


    Original
    DSF21545SV DS4153-4 DS4153-5 DSF21545SV DG858BW 0000A PDF

    AN4506

    Abstract: AN4839 DG858BW45 GTO thyristor 10A
    Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT AV dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ●


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    DG858BW45 DS4096-3 DS4096-4 AN4506 AN4839 DG858BW45 GTO thyristor 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: MARCH 1995 DG858BW45 DS4096-2.1 DG858BW45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A 1000V/µs dVD/dt diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters.


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    DG858BW45 DS4096-2 000V/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


    Original
    DSF21545SV DS4153-4 DS4153-5 DSF21545SV DG858BW 0000A PDF

    DG858BW45

    Abstract: No abstract text available
    Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●


    Original
    DG858BW45 DS4096-3 DS4096-4 DG858BW45 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●


    Original
    DG858BW45 DS4096-3 DS4096-4 000V/Â PDF

    DG858BW45

    Abstract: DG858BW
    Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor DS4096-5 July 2014 LN31733 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses


    Original
    DG858BW45 DS4096-5 LN31733) 000V/Â DG858BW45 DG858BW PDF

    DSF21545SV

    Abstract: DSF21545SV45
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter


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    DSF21545SV DS4153-3 DS4153-4 0000A DSF21545SV DG858BW DSF21545SV45 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●


    Original
    DG858BW45 DS4096-3 DS4096-4 000V/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: JANUARY 1996 DSF21545SV DS4153-3.0 DSF21545SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


    Original
    DSF21545SV DS4153-3 0000A DSF21545SV DG858BW DSF21545SV45 PDF

    DG858BW

    Abstract: 300a 1000v thyristor Gate Turn-Off Thyristors DG858BW45
    Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●


    Original
    DG858BW45 DS4096-3 DS4096-4 DG858BW 300a 1000v thyristor Gate Turn-Off Thyristors DG858BW45 PDF

    DSF21545SV

    Abstract: DSF21545SV45
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


    Original
    DSF21545SV DS4153-4 DS4153-5 DSF21545SV DG858BW 0000A DSF21545SV45 PDF

    DG858BW

    Abstract: GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV DSF21545SV45
    Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter


    Original
    DSF21545SV DS4153-3 DS4153-4 0000A DSF21545SV DG858BW GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV45 PDF

    AN4839

    Abstract: RC5327230 Honeywell v3
    Text: GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON


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    DS4568-3 DS4568-4 AN4571, DG858BW 500mm RC5327230 AN4839 RC5327230 Honeywell v3 PDF

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes PDF

    SG600EX21

    Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
    Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01


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    DS5549 DS5549-1 1501-25A01 DG406BP25 2001-25A01 DG646BH25 2003-45A01 DG648BH45 2501-25A01 SG600EX21 SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18 PDF

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor PDF

    Untitled

    Abstract: No abstract text available
    Text: GDUJULY 90 20722 1996 DS4568 - 2.0 GDU 90 20722 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching


    Original
    DS4568 DG858BW 500mm RC5327230 002cation, PDF

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original
    4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 PDF

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A PDF

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 'tc m 3 °°°A ■ Uninterruptable Power Supplies


    OCR Scan
    DG858BW45 DS4096 PDF

    DG858BW45

    Abstract: No abstract text available
    Text: M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 March 1998 KEY PARAMETERS APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . 't c m 3° ° ° A ■ Uninterruptabie Power Supplies


    OCR Scan
    DS4096 DG858BW45 DG858BW45 PDF

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY w . S E M I C O N D U C T O R S DS4096-2.2 DG858BW45 GATE TURN-OFF THYRISTOR KEY PARAMETERS 4000A 3000A V 4500V DRM 1180A 1000V/HS W jd t dl/dt 300A/|is APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . ■ Uninterruptable Power Supplies


    OCR Scan
    DS4096-2 DG858BW45 000V/HS 37fcià DD3GG53 37bflS22 PDF

    DYNEx

    Abstract: DG306AE
    Text: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500


    OCR Scan
    DGT304SE* DG306AE* DG406BP* DG646BH* DG856BW* DG408BP* DGT304SE DG306AE DG406BP DG646BH DYNEx PDF