Untitled
Abstract: No abstract text available
Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.
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DSF21545SV
DS4153-4
DS4153-5
DSF21545SV
DG858BW
0000A
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AN4506
Abstract: AN4839 DG858BW45 GTO thyristor 10A
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT AV dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ●
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DG858BW45
DS4096-3
DS4096-4
AN4506
AN4839
DG858BW45
GTO thyristor 10A
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Untitled
Abstract: No abstract text available
Text: MARCH 1995 DG858BW45 DS4096-2.1 DG858BW45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A 1000V/µs dVD/dt diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters.
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DG858BW45
DS4096-2
000V/Â
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Untitled
Abstract: No abstract text available
Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.
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DSF21545SV
DS4153-4
DS4153-5
DSF21545SV
DG858BW
0000A
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DG858BW45
Abstract: No abstract text available
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●
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DG858BW45
DS4096-3
DS4096-4
DG858BW45
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Untitled
Abstract: No abstract text available
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●
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DG858BW45
DS4096-3
DS4096-4
000V/Â
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DG858BW45
Abstract: DG858BW
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor DS4096-5 July 2014 LN31733 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses
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DG858BW45
DS4096-5
LN31733)
000V/Â
DG858BW45
DG858BW
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DSF21545SV
Abstract: DSF21545SV45
Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter
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DSF21545SV
DS4153-3
DS4153-4
0000A
DSF21545SV
DG858BW
DSF21545SV45
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Untitled
Abstract: No abstract text available
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●
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DG858BW45
DS4096-3
DS4096-4
000V/Â
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Untitled
Abstract: No abstract text available
Text: JANUARY 1996 DSF21545SV DS4153-3.0 DSF21545SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.
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DSF21545SV
DS4153-3
0000A
DSF21545SV
DG858BW
DSF21545SV45
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DG858BW
Abstract: 300a 1000v thyristor Gate Turn-Off Thyristors DG858BW45
Text: DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 1180A dVD/dt 1000V/µs diT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ●
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DG858BW45
DS4096-3
DS4096-4
DG858BW
300a 1000v thyristor
Gate Turn-Off Thyristors
DG858BW45
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DSF21545SV
Abstract: DSF21545SV45
Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.
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Original
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DSF21545SV
DS4153-4
DS4153-5
DSF21545SV
DG858BW
0000A
DSF21545SV45
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DG858BW
Abstract: GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV DSF21545SV45
Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter
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DSF21545SV
DS4153-3
DS4153-4
0000A
DSF21545SV
DG858BW
GTO thyristor 4500V 4000A
200a gto preliminary
AN4506
AN4839
AN4853
DSF21545SV45
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AN4839
Abstract: RC5327230 Honeywell v3
Text: GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON
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DS4568-3
DS4568-4
AN4571,
DG858BW
500mm
RC5327230
AN4839
RC5327230
Honeywell v3
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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SG600EX21
Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01
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DS5549
DS5549-1
1501-25A01
DG406BP25
2001-25A01
DG646BH25
2003-45A01
DG648BH45
2501-25A01
SG600EX21
SG600R21
FG2000DV-90
FG2000DV90
westcode cross reference
SG1000R23
SG1000EX23
FG1000AH
SG700EX22
DG406BP18
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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Untitled
Abstract: No abstract text available
Text: GDUJULY 90 20722 1996 DS4568 - 2.0 GDU 90 20722 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching
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DS4568
DG858BW
500mm
RC5327230
002cation,
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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Untitled
Abstract: No abstract text available
Text: @ M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 'tc m 3 °°°A ■ Uninterruptable Power Supplies
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OCR Scan
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DG858BW45
DS4096
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DG858BW45
Abstract: No abstract text available
Text: M ITEL DG858BW45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4096 - 2.1 DS4096 - 2.2 March 1998 KEY PARAMETERS APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . 't c m 3° ° ° A ■ Uninterruptabie Power Supplies
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OCR Scan
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PDF
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DS4096
DG858BW45
DG858BW45
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY w . S E M I C O N D U C T O R S DS4096-2.2 DG858BW45 GATE TURN-OFF THYRISTOR KEY PARAMETERS 4000A 3000A V 4500V DRM 1180A 1000V/HS W jd t dl/dt 300A/|is APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . ■ Uninterruptable Power Supplies
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DS4096-2
DG858BW45
000V/HS
37fciÃ
DD3GG53
37bflS22
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DYNEx
Abstract: DG306AE
Text: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500
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DGT304SE*
DG306AE*
DG406BP*
DG646BH*
DG856BW*
DG408BP*
DGT304SE
DG306AE
DG406BP
DG646BH
DYNEx
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