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    DIE BONDING Search Results

    DIE BONDING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    DIE BONDING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTH110

    Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
    Text: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;


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    IXTD110N25T-8W 22-A114-B AS0011. 110N25T 1-08-A IXTH110 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions PDF

    Die Attach epoxy stamping

    Abstract: 60022 pressure low die attach coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
    Text: Application Note Handling Gallium Arsenide Die Rev 2 INTRODUCTION Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations


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    LP0701

    Abstract: No abstract text available
    Text: Supertex inc. LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None (mils) LP0701 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si


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    LP0701 LP0701 A031110 PDF

    MAX3970

    Abstract: No abstract text available
    Text: Application Note: HFAN-8.0.1 Rev.1; 04/08 Understanding Bonding Coordinates and Physical Die Size Maxim Integrated Products Understanding Bonding Coordinates and Physical Die Size MAX3970 3 1 Introduction When calculating pad coordinates, there is often confusion between the die size specified in the data


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    MAX3970 HF98Z MAX3970 PDF

    LND150

    Abstract: No abstract text available
    Text: Supertex inc. LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Source Voltage


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    LND150 LND150 A031110 PDF

    siemens matsua kondensator

    Abstract: Siemens gleichrichter MKK-DC
    Text: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der


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    Untitled

    Abstract: No abstract text available
    Text: Application Note Switch Die Measurement Fixture Rev 0 RELEVANT PRODUCTS • calibration structure and the other 24 elements are used to measure die. Figure 1 illustrates a measurement element for a single pole, double throw SPDT switch die. All ANADIGICS Switch Die


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    leistungs dioden siemens

    Abstract: Siemens Electromechanical Components Siemens gleichrichter ferritkerne thyristor eupec
    Text: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der


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    2N6660

    Abstract: 2N6660-1
    Text: 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    2N6660 2N6660 A022009 2N6660-1 PDF

    VN2222NC

    Abstract: a0513
    Text: VN2222NC Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2222NC 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    VN2222NC VN2222NC A051309 a0513 PDF

    VN2224

    Abstract: No abstract text available
    Text: VN2224 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2224 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    VN2224 VN2224 A040609 PDF

    TN0604

    Abstract: No abstract text available
    Text: TN0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au 1 (mils) TN0604 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    TN0604 TN0604 A050409 PDF

    VN0808

    Abstract: No abstract text available
    Text: VN0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN0808 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    VN0808 VN0808 A022009 PDF

    VN0550

    Abstract: No abstract text available
    Text: VN0550 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0550 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    VN0550 VN0550 A020309 PDF

    LP0701

    Abstract: No abstract text available
    Text: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    LP0701 LP0701 A013009 PDF

    TP5322

    Abstract: No abstract text available
    Text: TP5322 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TP5322 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    TP5322 TP5322 A020309 PDF

    TN2130

    Abstract: No abstract text available
    Text: TN2130 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2130 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    TN2130 TN2130 A022009 PDF

    VP2106

    Abstract: No abstract text available
    Text: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    VP2106 VP2106 A022009 PDF

    MPF 39VF512

    Abstract: sst mpf 39vf512 39SF512 39SF010 sst mpf 39vf040 28sf040a 39VF010 39VF512 f0114 39vf020
    Text: Die Sales Specifications INTRODUCTION TO UNENCAPSULATED DIE This document provides the user with guidelines for processing, testing, and resolving applications issues associated with purchasing unencapsulated SST flash EEPROM die. Product electrical specifications, functional descriptions, and bonding diagrams are not included. This information is available in the appropriate


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    Untitled

    Abstract: No abstract text available
    Text: Packaging - Handling Gallium Arsenide Die Handling Gallium Arsenide Die Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding


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    Untitled

    Abstract: No abstract text available
    Text: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip


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    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:


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    BUZ11A 156x156 C-0071. 19source PDF

    PVAPOX

    Abstract: No abstract text available
    Text: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate


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    BUZ11A 156x156 MC-0074 PVAPOX PDF

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM


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    71TMHD IRF520 PDF