DIGITAL PREDISTORTION DPD 2CARRIER WCDMA Search Results

DIGITAL PREDISTORTION DPD 2CARRIER WCDMA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
SCL3400-D01-1		Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCL3400-D01-004		Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCL3400-D01-10		Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCL3400-D01-PCB		Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
DCL541A01		Toshiba Electronic Devices & Storage Corporation	Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable

DIGITAL PREDISTORTION DPD 2CARRIER WCDMA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NJM 78L08UA-ND Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor	PDF
78L08 Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544 Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544	PDF
OP6180 Abstract: CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0 Text: AN10951 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P Rev. 1 — 10 December 2010 Application note Document information Info Content Keywords Doherty architecture, Digital PreDistortion DPD , IS-95, multi-carrier	Original	AN10951 BLF7G20LS-90P BLF7G21LS-160P IS-95, BLF7G20LS-90P, BLF7G21LS-160P OP6180 CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F	PDF
Untitled Abstract: No abstract text available Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200	Original	AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S	PDF
Rogers 3006 Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109 Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200	Original	AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109	PDF
27 31 GHz HPA Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090 Text: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz	Original	EGN21A090IV 42dBm 2200MHz EGN21A090IV 27 31 GHz HPA hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090	PDF
EGN21A045IV Abstract: hpa L-band 27 31 GHz HPA GaN amplifier Text: Eudyna GaN-HEMT 45W Preliminary EGN21A045IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=39dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz	Original	EGN21A045IV 39dBm 2200MHz EGN21A045IV hpa L-band 27 31 GHz HPA GaN amplifier	PDF
CRCW08050R0FKEA Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222 Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P	Original	AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222	PDF
hpa L-band Abstract: EGN21A180IV Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz	Original	EGN21A180IV 45dBm 2200MHz EGN21A180IV Symb004 hpa L-band	PDF
BLC5G22LS-100 Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180 Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA ampliﬁer efﬁciency For RF power ampliﬁers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for	Original		PDF
BLF4G22-45 Abstract: BLF4G10-120 BLF4G22-100 BLF4G22-130 digital predistortion dpd 2carrier WCDMA Text: High efficiency LDMOS 4th Generation LDMOS boosts fuels 3G basestations performance of W-CDMA amplifiers To support high efficiency requirements of basestation power amplifiers, Philips 0.6 µm 4th generation LDMOS technology is a significant step forward compared to earlier 0.8 µm technologies, with a 50% higher	Original		PDF
OP6180 Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118 Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power	Original	AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF