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    Bimba Manufacturing Company LT-045-DBM

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 5 in; Double Acting ; | Bimba LT-045-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-045-DBM Bulk 5 Weeks 1
    • 1 $71.4
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    • 100 $71.4
    • 1000 $71.4
    • 10000 $71.4
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    Bimba Manufacturing Company LT-044.5-DBM

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 4.5 in; Double Acting | Bimba LT-044.5-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-044.5-DBM Bulk 5 Weeks 1
    • 1 $71.4
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    Bimba Manufacturing Company LT-024.5-DBM

    Thruster, Linear Thruster Cylinder ; 9/16in Bore ; Stroke: 4.5 in; Double Actin | Bimba LT-024.5-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-024.5-DBM Bulk 5 Weeks 1
    • 1 $67.56
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    • 100 $67.56
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    Bimba Manufacturing Company LTE-094.5-DBM

    Thruster, Linear Thruster Cylinder (Use for 1-1/16 TE models) [LTE]; 1-1/16in B | Bimba LTE-094.5-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LTE-094.5-DBM Bulk 5 Weeks 1
    • 1 $80.15
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    Bimba Manufacturing Company LTE-094.5-DBMT1

    Thruster, Linear Thruster Cylinder (Use for 1-1/16 TE models) [LTE]; 1-1/16in B | Bimba LTE-094.5-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LTE-094.5-DBMT1 Bulk 5 Weeks 1
    • 1 $85.26
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    45DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hpa L-band

    Abstract: EGN21A180IV
    Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


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    PDF EGN21A180IV 45dBm 2200MHz EGN21A180IV Symb004 hpa L-band

    MAX40003

    Abstract: Logarithmic Amplifier detector 25c2625 MAX4003 MAX4003EBL-T MAX4003ETA-T MAX4003EUA MO229
    Text: 19-2620; Rev 1; 3/03 100MHz to 2500MHz, 45dB RF Detector in a UCSP Features ♦ Complete RF Detector ♦ Frequency Range from 100MHz to 2500MHz ♦ Input Range of -58dBV to -13dBV -45dBm to 0dBm into 50Ω ♦ Fast Response: 70ns in 10dB Steps ♦ Low-Current Consumption: 5.9mA at VCC = 3.0V


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    PDF 100MHz 2500MHz, 2500MHz -58dBV -13dBV -45dBm MAX4003EBL-T MAX4003EUA MAX4003ETA-T MAX40003 Logarithmic Amplifier detector 25c2625 MAX4003 MAX4003EBL-T MAX4003ETA-T MAX4003EUA MO229

    Untitled

    Abstract: No abstract text available
    Text: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band 34dB typical small signal gain GaN HFET RFW1G33H40-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.


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    PDF 20MHz 1000MHz 45dBm RFW1G33H40-28 DP-75 RFW1G33H40-28 1000MHz.

    Untitled

    Abstract: No abstract text available
    Text: SMC2933L6012R High Voltage - High Power GaN-HEMT Pallet Amplifier FEATURES • • • • • High Voltage Operation : VDS=50V High Power : 700W typ. @ Pin=31.6W (45dBm) High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) Power Gain : 13.5dB(typ.) Impedance Matched Zin/Zout = 50 ohm


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    PDF SMC2933L6012R 45dBm) SMC2933L6012R 300usec 25deg 200msec,

    ATF-501P8

    Abstract: R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM
    Text: ATF-501P8 1900MHz High Linearity Amplifier Application Note 5021 Description Avago Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited as a base station transmit


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    PDF ATF-501P8 1900MHz ATF-501P8 45dBm com/pdf/AN-0002 ATF-501P8. 5989-0241EN R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM

    AP112

    Abstract: ap112 rfhic AP112 SOT89 TILT choke FP-85 812 SOT89
    Text: MMIC AP112 Product Features Applications • SOT89 Type Package • High IP3, High Gain • No matching circuit needed • 3MHz-2.5GHz • -73 dBc CTB, 135Channels, +30dBmV/ch, Single • -57 dBc CSO, 135Channels, +30dBmV/ch, Single • -79dBc CTB, 8Channels, +45dBmV/ch, Single


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    PDF AP112 135Channels, 30dBmV/ch, -79dBc 45dBmV/ch, -57dBc 100Years3 AP112 ap112 rfhic AP112 SOT89 TILT choke FP-85 812 SOT89

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP112 Product Features Application • SOT89 Type Package • High IP3, High Gain • No matching circuit needed • 3MHz-2.5GHz • -73 dBc CTB, 135Channels, +30dBmV/ch, Single • -57 dBc CSO, 135Channels, +30dBmV/ch, Single • -79dBc CTB, 8Channels, +45dBmV/ch, Single


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    PDF AP112 135Channels, 30dBmV/ch, -79dBc 45dBmV/ch, -57dBc 100Years3

    64DPCH

    Abstract: E4418B E4438C e4445a
    Text: HPA Module RGP2036-120 Product Features Application • Operating BW 400MHz • WCDMA 2FA, 45dBm • Solid state GaN FET amplifier • Pallet type HPA, Small and light weight • Excellent Power expansion • 50 Ohm Input/Output impedance • High reliability and ruggedness


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    PDF RGP2036-120 400MHz 45dBm 64DPCH E4418B E4438C e4445a

    R8121

    Abstract: ATF-501P8 0402CG189C9B200 ATF501P8 BCV62B ML200D low noise high frequency HEMT from agilent pHEMT transistor MTBF 0603CG100J9B20
    Text: ATF-501P8 Application Note ATF-501P8 Applications Information Description Agilent Technologies ATF501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited


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    PDF ATF-501P8 ATF501P8 45dBm com/products/data/appnotes/an178 ATF-54143 com/pdf/AN-0002 R8121 0402CG189C9B200 BCV62B ML200D low noise high frequency HEMT from agilent pHEMT transistor MTBF 0603CG100J9B20

    Untitled

    Abstract: No abstract text available
    Text: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.5 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm


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    PDF TGA2806-SM 40MHz 45dBm TGA2806-SM 1000MHz. TGA2806-SM,

    Untitled

    Abstract: No abstract text available
    Text: Wideband Power Amplifier RFW1G33H40-28 Product Features Application • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band • 34dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.


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    PDF RFW1G33H40-28 20MHz 1000MHz 45dBm DP-75 RFW1G33H40-28 1000MHz. 30dBm

    AP176

    Abstract: TIA-900-10
    Text: Coaxial RF Instrument Amplifier 50Ω TIA-900-10 High Power 100 to 900 MHz Features • instrument model with built-in power supply, 110V operation • high power output at 3.5dB compression, 45dBm typ. • high gain, 34 dB typ. • high reverse isolation, 80 dB typ.


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    PDF TIA-900-10 45dBm AP176 AP176 TIA-900-10

    ml marking sot 89

    Abstract: bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P P0120004P RR0816 IDS400
    Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


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    PDF P0120004P 45dBm OT-89 17GHz KP024J P0120004P ml marking sot 89 bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P RR0816 IDS400

    RFW1G33H40-28

    Abstract: No abstract text available
    Text: Wideband Power Amplifier RFW1G33H40-28 Product Features Application • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band • 34dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.


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    PDF RFW1G33H40-28 20MHz 1000MHz 45dBm DP-75 RFW1G33H40-28 1000MHz. 30dBm

    ADTL118-75

    Abstract: ETC1-1-13
    Text: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.7 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm


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    PDF TGA2806-SM 40MHz 45dBm TGA2806-SM 1000MHz. TGA2806-SM, ADTL118-75 ETC1-1-13

    ER 900

    Abstract: AP176 TIA-900-10
    Text: NON-CATALOG Coaxial RF Instrument Amplifier 50Ω TIA-900-10 High Power 100 to 900 MHz Features • instrument model with built-in power supply, 110V operation • high power output at 3.5dB compression, 45dBm typ. • high gain, 34 dB typ. • high reverse isolation, 80 dB typ.


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    PDF TIA-900-10 45dBm AP176 ER 900 AP176 TIA-900-10

    ECP050D-500

    Abstract: No abstract text available
    Text: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


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    PDF ECP050 2300MHz 28dBm 45dBm PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP050 ECP050G ECP050G-500 ECP050G-1000 ECP050D-500

    Untitled

    Abstract: No abstract text available
    Text: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.5 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm


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    PDF TGA2806-SM 40MHz 45dBm TGA2806-SM 1000MHz. TGA2806-SM,

    Untitled

    Abstract: No abstract text available
    Text: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,


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    PDF HWF1686YC 123456789ABC7DEF7 30dBm 45dBm

    SGN2933-600D-R

    Abstract: No abstract text available
    Text: SGN2933-600D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 700W typ. @ Pin=31.6W (45dBm) •High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) •Broad Band: 2.9 to 3.3GHz • 50 ohm Matched Pair


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    PDF SGN2933-600D-R 45dBm) SGN2933-600D-R 200msec,

    Untitled

    Abstract: No abstract text available
    Text: SGN2933-600D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 700W typ. @ Pin=31.6W (45dBm) •High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) •Broad Band: 2.9 to 3.3GHz • 50 ohm Matched Pair


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    PDF SGN2933-600D-R 45dBm) SGN2933-600D-R 200msec,

    eudyna transistors catalog

    Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028
    Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


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    PDF P0120004P 45dBm OT-89 P0120004P eudyna transistors catalog ISO-14001 KP024J RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028

    transformer 1459

    Abstract: TTC-105N 470q
    Text: REV. S ta tu s REVISION 0 2 / 1 0 / 0 0 TS Telecommunication Coupling Transform er A. Electrical Specifications @ 25° C 1. Pri Source Impedance; 6000 2. Sec Load Impedance; 470Q 3. Pri DC Current; 90mA MAX ( 1 - 3 ) 4. Operating Level; — 45dBm to +7dBm


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    PDF 45dBm 30mADC 90mADC 600Hz, 300Hz 30mADC 1500Vrms P-A1-11317 ACAD\TTC\A1113171 TTC-105N transformer 1459 470q

    apd oc-3

    Abstract: hitachi SAW Filter lightwave receiver hitachi core EE 20
    Text: RCV5467 Preliminary OC-3 Receiver Description The RCV5667 is a lightwave receiver for OC-3. Features • InGaAs APD • High sensitivity: -45dBm • Operation at 155.52Mb/s (scrambled NRZ) at 1.3 |im or 1.55 |im wavelength • ECL1 OK interface • Clock recovery using SAW filter


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    PDF RCV5467 RCV5667 -45dBm 52Mb/s apd oc-3 hitachi SAW Filter lightwave receiver hitachi core EE 20