Untitled
Abstract: No abstract text available
Text: R2005280L R2005280L Si Reverse Hybrid 5MHz to 200MHz Low Current Package: SOT-115J The R2005280L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited for 5MHz to
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R2005280L
200MHz
OT-115J
R2005280L
200MHz
140mA
24VDC
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BGY67A
Abstract: DIN45004B
Text: BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 04 — 14 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
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BGY67A
OT115J
MSC895
BGY67A
DIN45004B
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BFQ591
Abstract: transistor 09013 NPN 09013 NPN DIN45004B philips MATV amplifiers
Text: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFQ591
E20071002
BFQ591
transistor 09013 NPN
09013 NPN
DIN45004B
philips MATV amplifiers
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R1005250L
Abstract: DIN45004B
Text: R1005250L R1005250L Low Current 5MHz to 100 MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R1005250L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R1005250L
OT-115J
R1005250L
100MHz
100MHz
140mA
24VDC
DIN45004B
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702; BGD702MI 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD702;
BGD702MI
OT115J
BGD702
SCA73
613518/06/pp12
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DIN45004B
Abstract: R3005300L
Text: R3005300L R3005300L Low Current 5MHz to 300MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.
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R3005300L
300MHz
OT-115J
R3005300L
300MHz
160mA
24VDC
DIN45004B
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DIN45004B
Abstract: R2005240P12 50dBmV
Text: R2005240P12 R2005240P1 2 5MHz to 200 MHz GaAs REVERSE HYBRID Package: SOT-115J Product Description Features The R2005240P12 is a hybrid reverse amplifier. The part employs a GaAs die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited
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R2005240P12
R2005240P1
OT-115J
R2005240P12
200MHz
200MHz
360mA
12VDC
DIN45004B
50dBmV
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DIN45004B
Abstract: R2005240 Premier Devices
Text: Product Specification R2005240 Si Reverse, 5 – 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations
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R2005240
200MHz,
24VDC
200MHz
235mA
D-90441
DIN45004B
R2005240
Premier Devices
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Premier Devices Germany
Abstract: DIN45004B R2005240P12
Text: Preliminary Product Specification R2005240P12 GaAs Reverse, 5 – 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R2005240P12
200MHz,
360mA
12VDC
200MHz
D-90441
Premier Devices Germany
DIN45004B
R2005240P12
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BGD812
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier
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M3D252
BGD812
OT115J
613518/04/pp10
BGD812
DIN45004B
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BGD802
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES
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M3D252
BGD802
OT115J
613518/07/pp10
BGD802
DIN45004B
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BGD814
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier
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M3D252
BGD814
OT115J
613518/04/pp10
BGD814
DIN45004B
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BGR269
Abstract: DIN45004B
Text: BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
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BGR269
OT115J
BGR269
DIN45004B
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by CA912/D SEMICONDUCTOR TECHNICAL DATA The RF Line CA912 VHF/UHF CATV Amplifier CA912A . . . designed for broadband applications requiring low–distortion and high output capability. Specifically intended for CATV/MATV market requirements.
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CA912/D
CA912
CA912A
DIN45004B
CA912
CA912/D*
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGE787B CATV amplifier module Preliminary specification 2000 Oct 03 Philips Semiconductors Preliminary specification CATV amplifier module BGE787B PINNING - SOT115J FEATURES • Excellent linearity PIN
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M3D252
BGE787B
OT115J
OT115J
603518/01/pp6
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MCD990
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier
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M3D252
CGD914;
CGD914MI
OT115J
CGD914
870ail
SCA73
MCD990
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 CGY887A 860 MHz, 25.5 dB gain push-pull amplifier Product specification Supersedes data of 2001 Oct 25 2002 Apr 18 Philips Semiconductors Product specification 860 MHz, 25.5 dB gain push-pull amplifier
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M3D252
CGY887A
OT115J
SCA74
613518/05/pp8
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philips fr 310
Abstract: BGY588N equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification Supersedes data of 2000 Feb 14 2001 Oct 22 Philips Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier
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M3D252
BGY588N
OT115J
SCA73
613518/04/pp8
philips fr 310
BGY588N equivalent
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY785A 750 MHz, 18.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain push-pull amplifier
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M3D252
BGY785A
OT115J
SCA73
613518/04/pp12
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714P
Abstract: CA901 DIN45004B
Text: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA The RF Line VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers
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CA901/D
CA901
DIN45004B
714nufacture
714P
CA901
DIN45004B
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714P
Abstract: CA901 CA901A DIN45004B
Text: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA The RF Line CA901 VHF/UHF CATV Amplifiers CA901A . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers
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CA901/D
CA901
CA901A
DIN45004B
CA901
CA901/D*
714P
CA901A
DIN45004B
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714P
Abstract: CA901 CA901A DIN45004B
Text: MOTOROLA Order this document by CA901A/D SEMICONDUCTOR TECHNICAL DATA CA901A The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers
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CA901A/D
CA901A
DIN45004B
714P
CA901
CA901A
DIN45004B
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES
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M3D252
BGD812
OT115J
613518/04/pp10
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