IT05296
Abstract: 2SJ458
Text: 2SJ458 Ordering number : EN8578 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ458 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. High-speed diod. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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2SJ458
EN8578
IT05296
2SJ458
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p j 85 diod
Abstract: 78 DIOD FAST DIOD
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 931SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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931SH
p j 85 diod
78 DIOD
FAST DIOD
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78 DIOD
Abstract: No abstract text available
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1031SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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1031SH
78 DIOD
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78 DIOD
Abstract: No abstract text available
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1031SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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1031SH
78 DIOD
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78 DIOD
Abstract: No abstract text available
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1331SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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1331SH
78 DIOD
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p j 85 diod
Abstract: diod 100A diod
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1951SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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1951SH
p j 85 diod
diod 100A
diod
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diod 314
Abstract: No abstract text available
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 911SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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911SH
diod 314
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78 DIOD
Abstract: No abstract text available
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1331SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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1331SH
78 DIOD
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Untitled
Abstract: No abstract text available
Text: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 911SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages
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911SH
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Untitled
Abstract: No abstract text available
Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode
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CAS100H12AM1
CAS100H12AM1
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TC04A-200
Abstract: Semtech ac tvs high speed low power thyristor thyristor rectifier 100a
Text: TC04A-200 Battery Tracking TransClamp For SLIC Linecard Protection PRELIMINARY PROTECTION PRODUCTS Description Features The battery tracking TransClamp series of transient voltage suppressors TVS are designed to protect subscriber line interface circuit (SLIC) from transient
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TC04A-200
TC04A-200
SO-16
TC04A
200mA
Semtech ac tvs
high speed low power thyristor
thyristor rectifier 100a
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Untitled
Abstract: No abstract text available
Text: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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IRLM220A
OT-223
IRLM220ATF
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Untitled
Abstract: No abstract text available
Text: FDP2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP2710
O-220
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Untitled
Abstract: No abstract text available
Text: FDB2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored
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FDB2710
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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25A SCREW MOUNTED DIODE
Abstract: PM505 PM50502C ti5T
Text: HITACHI PM50502C SILIC O N N -C H A N N EL P O W E R MOS F E T M O D ULE HIGH SPEED POW ER SWITCHING • FEA TU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain
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PM50502C
PM505Ã
25A SCREW MOUNTED DIODE
PM505
PM50502C
ti5T
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RHR15120
Abstract: DIODE RHR15120 RHR1512 TA49098 silicon diode 1200V capacitance RHRP15120
Text: in t e RHRP15120 r r ii J a n u a ry . Data Sheet w in File Num ber 3677.2 15A, 1200V Hyperfast Diode Features T he R H R P 15 12 0 is a hyperfast diod e w ith so ft recovery • H yp erfast w ith S o ft R e c o v e ry . . < 65ns • O pe ra ting T e m pe rature.
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RHRP15120
RHRP15120
TA49098.
O-220AC
RHR15120
RHR15120
DIODE RHR15120
RHR1512
TA49098
silicon diode 1200V capacitance
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APPLICATION NOTES IGBT
Abstract: 4101 transistor 25CC
Text: 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID T k J g ^ f a a f\ 4 4 1 U I M.S. KENNEDY CORP. 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • 600V, 50 Amp Capability • Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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S134300
4101B
Mil-H-38534
APPLICATION NOTES IGBT
4101 transistor
25CC
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TRANSISTOR 1300 1b
Abstract: No abstract text available
Text: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
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YTFP452
IDSS-250uA
VDS-500V
250uA
Ta-25Â
IDR-12A
00A/us
TRANSISTOR 1300 1b
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Untitled
Abstract: No abstract text available
Text: [PRODUCT ^litron CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET 6 0 V , 3 0 A , 0.04 0 ABSOLUTE MAXIMUM RATINGS SDF044 SDF044 PARAMETER JAA JAB FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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SDF044
MIL-S-19500
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power mosfet 900v
Abstract: diode a42
Text: PRO D UCT C Â T Â IO » Æ litT O Ïl N -CHANNEL ENHANCEMENT MOS FET 900V, 11A , 0 . 9 5 n SDF11N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES
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SDF11N90
power mosfet 900v
diode a42
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NPN VCE0 1000V
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d from Case. . 2 Power T r a n s i s t o r s and 2 F re e Wheeling Diodes a r e B u i t - i n to 1 Pac kage.
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MG50M2YK1
MG25M2YK1
NPN VCE0 1000V
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SSP6N70
Abstract: ssp6n70a
Text: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■
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SSP6N70A
O-220
SSP6N70
ssp6n70a
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