RP1A40D5
Abstract: RM1E23AA25 RS1A23D25 AL 2425 dv RM1A23D25 RM1A40 RN2F48I30 RP1A23D5 transoptor RN1F48V50
Text: 13 Przekaniki pó³przewodnikowe Przekanik pó³przewodnikowy ang. Solid State Relay jest urz¹dzeniem za³¹czaj¹cym mocy, sk³adaj¹cym siê z komponentów elektronicznych. Termin "przekanik" (ang. Relay) wskazuje, ¿e urz¹dzenie jest porównywalne do przekanika
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MW131
Abstract: DIODE 2141
Text: OPTEK TECHNOLOGY INC ObE D | bVT&SBO OODOHlb 3 g Optoelectronics Division B TRW Electronic Components Group Product Bulletin 5190 January 1985 _ a e A lm — M Optically Coupled Isolator Type 0PI14Q v~ .oisoffi4 UA0S “ 6010 PUTtD l 0VAR U— .04W127» .028(0.711
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0PI14Q
I78j4
04W127»
0PI140
MW131
DIODE 2141
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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PDC4310
Abstract: No abstract text available
Text: T & D TECHNOLOGIE S USE D • 1105003 QQG007M 7 Œ B T D T PDT1412/1411 PIGTAILED PIN PHOTODIODE Features Applications I Hermetic construction ■ Instrumentation ■ Low dark current ■ O -E convertors ■ High reliability planar InGaAs PIN photodiode ■
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QQG007M
PDT1412/1411
PDT141X
Q00QD7S
mete250
USE-0075-08
PDT0411/0412
PDC4310
PDT1411/1412
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Katalog CEMI
Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby
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617G
Abstract: sfh diode 617 SFH617 reflective optocoupler puls detector sfh617g
Text: SIEMENS FEATU R ES SFH617G 5.3 kV TRIOS * OPTOCOUPLER Package Dimensions in Inches mm * C u rre n t T ra n s fe r R atios: SFH 617(3-1,40-80% S F H 6 1 7 G -2 ,63-125% SFH 6 1 7 G -3 ,100-200% S F H 6 1 7 G -4 ,160-320% * C reepage D is ta n c e s a n d C learances
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SFH617G
SFH617G
617G
sfh diode 617
SFH617
reflective optocoupler
puls detector
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2N69S
Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Text: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching
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2N5989
2N5991
2N5989
2NS991
V01TS>
2N69S
To226AB
diodA QE
2N5891
dioda OA 50
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NX DIODE SM
Abstract: 2N6164 2N6764 q2N6764 MOSF6
Text: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E
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2N6764
2N6764
NX DIODE SM
2N6164
q2N6764
MOSF6
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dioda BY 235
Abstract: No abstract text available
Text: N -CH A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS >0 'dm CO >w PD T j'^STG tl APT 4020HN APT 3525HN APT 4C25HN UNIT 350 400 350 400 Volts Drain-Sourca Voitage Continuous Drain Current @ Tc - 25°C Pulsed Drain Current 23.5 21.0 94 84 Amps Gata-Sourca Voltage
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APT4020HN
APT3520HN
APT4025HN
AFT3525HN
3520HN
4020HN
3525HN
4C25HN
APT402Q/4025HN
FIGURE13.
dioda BY 235
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2N6155
Abstract: 2n6156 2N6755 2N6756 dioda
Text: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode
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3fi750fll
t-39-
2N6755,
2N6756
0V-100V
2N6755
2N6756
3fi75Clfll
2N6155
2n6156
dioda
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Untitled
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ZSM560 ISSUE 2 - NOVEMBER 1995_ DEVICE DESCRIPTION FEATURES The ZSM560 is a three terminal under voltage monitor circuit fo r use in m icroprocessor systems. The threshold voltage of the device has been set to 4.6 volts making it ideal for 5
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ZSM560
ZSM560
OT223
circuits20
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ma 8920
Abstract: dioda rectifier 04140 tny 226 dioda 12B 750PEF10 750PEF40 power dioda cross 9BB. GI 8920
Text: INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER 4T DE§4flSS452 DD047B4 b Data Sheet No. P D -3.06f 49C 04734 C INTERNATIONAL RECTIFIER I R 1 180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description The 750PEF series of fast turn-off thyristors use centre
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750PEF
233KansasSt.
CA90245
II60067.
ma 8920
dioda rectifier
04140
tny 226
dioda 12B
750PEF10
750PEF40
power dioda cross
9BB.
GI 8920
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OA7 diode
Abstract: AL 1450 DV
Text: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.
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IRFV064
1RFV064D
IRFV064U
O-258
MIL-S-19500
I-454
OA7 diode
AL 1450 DV
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MDA980-1
Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
Text: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer
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MDA980-1
MDA980-6
MDA990-1
MDA990-6
MDA990
MDA990-6
dioda bridge
pj 66 diode
pj 50 diode
pj 56 diode
dioda 30 Ampere
dioda rectifier
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transistor eft 323
Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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PDF
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ma 8920
Abstract: 750PEF10 750PEF40 NI-11
Text: INTERNATIONAL RECTIFIER / qcc / ct 4855452 INTERNATIONAL RECTIFIER in D e | 4ASS452 000473M b Data Sheet No. PD-3.065 49C 04734 D INTERNATIONAL RECTIFIER I R 1180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description Th e 7 5 0 P E F series o f fast tu r n -o ff thyristors use centre
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OCR Scan
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4i3SS455
750PEF
233KansasSl
CA90245
II60067.
ma 8920
750PEF10
750PEF40
NI-11
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PDF
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philco transistors
Abstract: ECG77 dioda zener 39 ECG779A
Text: PHILIPS E C G INC 17E D S bbSBTSfl 00 034b2 4 T -7 7 -0 7 -0 5 ECG779A TV SIGNAL PROCESS semiconductors v io io in pu t Q ADJ. N C G .t .F . AGC C AGC M f. Q ECG779A 13 a monolithic TV circuit with sync separator, advanced noise Inversion, AGO comparator, and versatile R F AG C
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034b2
ECG779A
ECG779A
D0034b7
D0034bô
27mfr
philco transistors
ECG77
dioda zener 39
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potentiometer 470 ohms preset
Abstract: philco philco transistors Philips ECG flyback "RF AGC Amplifier" philco 70 ECG 177 zener diode sync separator for monochrome tv ECG779-1 zener diode A39
Text: PHILIPS E C G INC 17E D S bbSBTSfl 00 034b2 4 T-77-07-05 ECG779A TV SIGNAL PROCESS semiconductors v io io in pu t Q ADJ. N C G .t .F . AGC C AGC M f. Q ECG779A 13 a monolithic TV circuit with sync separator, advanced noise Inversion, AGO comparator, and versatile RF AGC
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bb531Efl
00034b2
ECG779A
ECG779A
G0034b7
D0034bÃ
27mfr
T-77-07-05
potentiometer 470 ohms preset
philco
philco transistors
Philips ECG flyback
"RF AGC Amplifier"
philco 70
ECG 177 zener diode
sync separator for monochrome tv
ECG779-1
zener diode A39
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PDF
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Untitled
Abstract: No abstract text available
Text: Ç fy S P T SIGNAL PROCESSING TECHNOLOGIES S P T 7 8 2 10-BIT, 20 MSPS, TTL OUTPUT, A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold Bipolar ±2.0 V Analog Input 60 dB SNR @ 1 MHz Input
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10-BIT,
SPT7820
10-bit
SPT7820AIJ
SPT7820BIJ
SPT7820ACN
SPT7820BCN
SPT7820ACS
SPT7820BCS
SPT7820AMJ
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BTP-128-400
Abstract: blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129
Text: jfifj U N I T P R tS l GEMI E L E M E N T Y P Ö t P R Z E W O D N I K O W E I U K L A D Y S C A L O N E 1 9 7 9 /8 0 KATALOG SKRÖCONY ► • ■■ H U II ■ I S ■ . -. I . . . . . NAUKOWO-PRODUKCYJNE CENTRUM PÖIPRZEWODNIKÖW NAUKOWO-PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW
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NS113
B31/C4
O-116
MP-117
CB-79
MP-186
CB-68
CB-109
CE75A
CB-108
BTP-128-400
blyp22
BTP128
p 181 transoptor
CQDP74
BZP683
Bfcp99
UCY74123
BD282
BTP129
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PDF
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tektronix type 576 curve tracer
Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con
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AN915
AN915/D
AN915/D
tektronix type 576 curve tracer
tektronix 576 curve tracer
Tracer 176
MR756
2n4401 die
DIODO 4001
real time application of ASTABLE mode
AN915 MOTOROLA
line frequency diode
AN915
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PDF
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mh7493
Abstract: MA0403A maa 502 MH1SS1 Katalog tesla diod MH7442 MH7404 MA0403 MAA723 MH74S74
Text: POLOVODICOVÉ S O U C Á S T K Y PftEDPIS PRO P Ä JEN l Polovodicove soucdstky Jsou velml choulostlvd na nadmernS otepleni. Proto, aby nedochazelo k je jich poskozeni, do p o ruiuje se zachovat tento postup pfl pd jenf: Konce pnvodii je nutno predem ocinovat v delce 4 - 5
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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