BAP64-05
Abstract: BP317 SMD MARKING CODE 5kp
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-05 Silicon PIN diode Preliminary specification 1999 Jun 16 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-05 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION
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M3D088
BAP64-05
125004/00/02/pp7
BAP64-05
BP317
SMD MARKING CODE 5kp
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP65-05 Silicon PIN diode Product specification 2001 May 07 Philips Semiconductors Product specification Silicon PIN diode BAP65-05 FEATURES PINNING • Two elements in common cathode configuration PIN
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M3D088
BAP65-05
MAM108
613512/01/pp8
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BAP50-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAP50-05 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification General purpose PIN diode BAP50-05 PINNING FEATURES
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OCR Scan
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BAP50-05
BAP50-05
SCA64
125004/00/02/pp8
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PDF
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smd diode code ok 96
Abstract: A2 DIODE SMD CODE MARKING marking code 10 sot23 philips 23 SMD MARKING CODE s4 BP317 BAP63-05 marking 5BX
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP63-05 Silicon PIN diode Objective specification 2000 Feb 17 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 PINNING FEATURES • High speed switching for RF signals PIN DESCRIPTION
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M3D088
BAP63-05
MAM108
125004/04/pp6
smd diode code ok 96
A2 DIODE SMD CODE MARKING
marking code 10 sot23
philips 23
SMD MARKING CODE s4
BP317
BAP63-05
marking 5BX
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Untitled
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD24VL1B Series Low Capacitance Bi-directional ESD / Transient Protection Diode ESD24VL1B-02LS ESD24VL1B-02LRH Data Sheet Revision 1.1, 2012-05-04 Final Power Management & Multimarket Edition 2012-05-04 Published by
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ESD24VL1B
ESD24VL1B-02LS
ESD24VL1B-02LRH
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BAP64-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-05
BAP64-05
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Infineon X-GOLD 110
Abstract: X-GOLD 110 nfc antenna ESD24VL1B02L murata nfc antenna ESD24VL1B-02LRH xgold ESD24VL1B-02LS
Text: TVS Diode Transient Voltage Suppressor Diodes ESD24VL1B Series Low Capacitance Bi-directional ESD / Transient Protection Diode ESD24VL1B-02LS ESD24VL1B-02LRH Data Sheet Revision 1.1, 2012-05-04 Final Power Management & Multimarket Edition 2012-05-04 Published by
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ESD24VL1B
ESD24VL1B-02LS
ESD24VL1B-02LRH
Infineon X-GOLD 110
X-GOLD 110
nfc antenna
ESD24VL1B02L
murata nfc antenna
ESD24VL1B-02LRH
xgold
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BAP64-05
Abstract: MCD772
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 Philips Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled
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Original
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M3D088
BAP64-05
125004/04/pp8
BAP64-05
MCD772
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BAP64-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAP64-05 Silicon PIN diode Preliminary specification Supersedes data of 1999 Apr 01 Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-05 PINNING FEATURES • High voltage, current controlled
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OCR Scan
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BAP64-05
BAP64-05
SCA64
125004/00/02/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: BBY66-05 3 Silicon Tuning Diode High capacitance ratio High Q hyperabrupt tuning diode 2 Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 Very low capacitance spread Type BBY66-05 VPS05161 Marking Pin Configuration
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BBY66-05
VPS05161
Jun-03-2002
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BAP50-05
Abstract: DIODE 61 BP
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BAP50-05 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-05 PINNING FEATURES • Two elements in common cathode configuration in a
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M3D088
BAP50-05
MAM108
125004/00/02/pp8
BAP50-05
DIODE 61 BP
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BBY66-05
Abstract: No abstract text available
Text: BBY66-05 3 Silicon Tuning Diode High capacitance ratio High Q hyperabrupt tuning diode 2 Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1 Very low capacitance spread Type BBY66-05 Marking OBs Pin Configuration
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BBY66-05
VPS05161
OT-23
Mar-08-2001
BBY66-05
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Untitled
Abstract: No abstract text available
Text: BBY 66-05 3 Silicon Tuning Diode Preliminary data High capacitance ratio High Q hyperabrupt tuning diode 2 Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1 Very low capacitance spread Type Marking BBY 66-05
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VPS05161
OT-23
Jan-15-2001
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ESD200-B1-CSP0201
Abstract: OmniVision m
Text: TVS Diode Transient Voltage Suppressor Diodes ESD200-B1-CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package ESD200-B1-CSP0201 Data Sheet Revision 1.0, 2013-05-21 Final Power Management & Multimarket Edition 2013-05-21 Published by Infineon Technologies AG
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ESD200-B1-CSP0201
AN210:
ESD200-B1-CSP0201
OmniVision m
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MSWSE-02
Abstract: mswse-020 a1711 MSWSE mswse020 MSWSE-020-05
Text: MSWSE-020-05 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-020-05 is a PIN diode SPST switch element designed for medium incident power applications, up to 20 W C.W. It has low insertion loss and medium isolation below 0.5 GHz.
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MSWSE-020-05
MSWSE-020-05
STD-J-20C
A17118
MSWSE-02
mswse-020
a1711
MSWSE
mswse020
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BAS70 dip
Abstract: 100OHM 125OC BAS70 BAS70-04 BAS70-05 smd diode green BAND
Text: Formosa MS SMD Schottky Barrier Diode BAS70 / 04 / 05 / 06 List List. 1 Package outline. 2
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BAS70
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
BAS70 dip
100OHM
125OC
BAS70-04
BAS70-05
smd diode green BAND
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k45 diode
Abstract: diode k44 transistor k43 marking k43 diode diode marking 45 diode MARKING A0 BAS40W BAS40W-04 BAS40W-05 BAS40W-06
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAS40W SERIES SOT-323 SCHOTTKY DIODE 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current
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OT-323
BAS40W
OT-323
BAS40W-04
BAS40W-05
BAS40W-06
k45 diode
diode k44
transistor k43
marking k43 diode
diode marking 45
diode MARKING A0
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1PS59SB21
Abstract: MARKING CODE 21
Text: DISCRETE SEMICONDUCTORS 1PS59SB21 Schottky barrier diode 1999 May 05 Product specification Supersedes data of 1998 Jul 28 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS59SB21 DESCRIPTION
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1PS59SB21
1PS59SB21
SC-59
MSA314
SCA64
5002/00/02/pp8
MARKING CODE 21
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SOT-323
Abstract: No abstract text available
Text: Formosa MS BAS70W / BAS70W-04 / BAS70W-05 / BAS70W-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAS70W
BAS70W-04
BAS70W-05
BAS70W-06
MIL-STD-750D
METHOD-1056
METHOD-4066-2
METHOD-1051
SOT-323
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SOT-23
Abstract: BAS70-05
Text: Formosa MS BAS70 / BAS70-04 / BAS70-05 / BAS70-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAS70
BAS70-04
BAS70-05
BAS70-06
1000hrs.
MIL-STD-750D
METHOD-1051
METHOD-1056
SOT-23
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SOT-323
Abstract: No abstract text available
Text: Formosa MS BAS40W / BAS40W-04 / BAS40W-05 / BAS40W-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAS40W
BAS40W-04
BAS40W-05
BAS40W-06
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
SOT-323
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Marking k45
Abstract: FBAS40DW-05 k45 diode diode k45
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS40DW-05
WBFBP-06C
Marking k45
FBAS40DW-05
k45 diode
diode k45
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS40DW-05
WBFBP-06C
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SOT-23
Abstract: BAS40-04
Text: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
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BAS40
BAS40-04
BAS40-05
BAS40-06
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
SOT-23
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