Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
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Original
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MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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Original
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MEST2GFC-10-25
26X12
A17111
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2GFC-010-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for
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Original
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MEST2GFC-010-25
26X12
A17111
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PDF
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NJU7670
Abstract: NJU7670D NJU7670M NJU7670V NJU767Q
Text: v JL □ \î O m » I S 1 N O N J O < • • • • • • • • s g s i a ? EE >-• a . S i p fl SS S * wiili ! îd - m 1 F» ù* M s ÌS 9 Hfî ■M a . y—\ as Wllll TTlSl p j l plg] ? mm o 3 > < EE si a z fi s o I CJl Û* m 9tt n a» f ¿ S w
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OCR Scan
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NJU7670
NJU7670lÂ
NJU7670D
NJU7670M
DIP/DMP/SS0P14
NJU7670V
NJU7670
NJU767Q
NJU767Q
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PDF
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a1711
Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Text: ATP114 Ordering number : A1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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Original
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ATP114
ENA1711
4000pF
A1711-4/4
a1711
A1711-2
ENA1711
ATP114
A1711-1
A1711-3
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PDF
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Untitled
Abstract: No abstract text available
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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Original
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A17113
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable
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Original
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MEST2G-150-10-CM32
MEST2G-150-10
STD-J-20C
A17110
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PDF
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Untitled
Abstract: No abstract text available
Text: MSDM20-0118 ZERO BIAS SCHOTTKY DETECTOR 2012 Molded Plastic DFN Description Features The MSDM20-0118 is a Silicon Zero Bias Schottky Detector module in a molded plastic DFN 2012 package. It can be used up to 26 GHz and power detection up to 10 dBm. Only a DC return is required
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Original
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MSDM20-0118
MSDM20-0118
A17115
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PDF
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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OCR Scan
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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PDF
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Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
|
Original
|
MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
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Original
|
MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
|
PDF
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transistor a1413
Abstract: a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004
Text: Motorola XGATE Assembler Revised 02-Jun-2004 Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corporation in the United States and/ or other countries. CodeWarrior is a trademark or registered trademark of Metrowerks Corporation in the United States
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Original
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02-Jun-2004
transistor a1413
a1413
a2305
4b42
A14129
ls-t73
transistor a1412
a2400
a2380
A18004
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PDF
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MEST2G-150-10-CM32
Abstract: a1711
Text: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch application up to 150 watts. Usable up
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Original
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MEST2G-150-10-CM32
MEST2G-150-10
STD-J-20C
A17110
MEST2G-150-10-CM32
a1711
|
PDF
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a17110
Abstract: No abstract text available
Text: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable
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Original
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MEST2G-150-10-CM32
MEST2G-150-10
STD-J-20C
A17110
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PDF
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|
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application notes Microwave
Abstract: No abstract text available
Text: MMA504 DC to 4.0 GHz Amplifier 2012 Molded Plastic DFN Description: Features: MMA504 is a fully matched amplifier fabricated in Aeroflex / Metelics’ highly reliable InGap HBT technology and housed in a low cost 1.9 X 1.1 plastic DFN package. It is designed for wireless infrastructure, test instruments
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Original
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MMA504
A17114
application notes Microwave
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PDF
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l6703
Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Text: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS
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Original
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X3904U:
X3905U:
X3906U:
X3907U:
X3908U:
X3910W:
X3912W:
X3913W:
X3915W:
X3916U:
l6703
L6283
l6278
L6284
L6916
l6262
A1658
SVC 561 14
C3041
A1671
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PDF
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A1711
Abstract: No abstract text available
Text: Ordering number : A1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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Original
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ENA1711A
ATP114
4000pF
PW10s)
PW10s,
--15V,
--28Aere
A1711-7/7
A1711
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable
|
Original
|
MEST2G-150-10-CM32
MEST2G-150-10
STD-J-20C
A17110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MEST2G-150-10-CM30 PIN DIODE SWITCH ELEMENT CM30 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for a reliable high power switch application up to 150 watts. Usable up
|
Original
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MEST2G-150-10-CM30
MEST2G-150-10
STD-J-20C
A17110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MEST2G-150-20 PIN DIODE SWITCH ELEMENT CM26 non-hermetic Bolt Down Package Description Features The MEST G-150-020-CM26 is a Thermal to Ground Series diode Switch Element in a bolt down Copper package. This part is designed for reliable high power switch application up to 150 watts. Usable up to
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Original
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MEST2G-150-20
G-150-020-CM26
STD-J-20C
A17110
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PDF
|
Untitled
Abstract: No abstract text available
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
|
Original
|
A17113
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-010-16S Silicon PIN Diode Switch Element 1 2 0402P Molded Platic DFN Package Features Description The MSWSE-010-16S is a PIN diode switch element designed for medium incident power applications, up to 10 W C.W. It has low insertion loss and medium
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Original
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MSWSE-010-16S
0402P
MSWSE-010-16S
J-STD-20C
A17117
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PDF
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l6703
Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Text: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS
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Original
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x3903U:
x3904U:
x3905U:
x3906U:
x3907U:
x3908U:
x3910W:
x3912W:
x3913W:
x3915W:
l6703
asm 1442
L6916E
SVC 561 14
L6232E
A1659
a1718
a1694
C2068
STR 6765
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PDF
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L6283
Abstract: L6278 l6703 L6916 A1273 L6320W 0496B L6252 L6324 A1671
Text: ARM Compiler toolchain Version 4.1 Errors and Warnings Reference Printed on: October 25, 2010 Copyright 2010 ARM. All rights reserved. DUI 0496B ID102510 ARM Compiler toolchain Errors and Warnings Reference Copyright © 2010 ARM. All rights reserved.
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Original
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0496B
ID102510)
A1746W.
L6065E.
L6220E,
L6221E,
L6384E,
L6915E,
L6971E.
L6224E
L6283
L6278
l6703
L6916
A1273
L6320W
0496B
L6252
L6324
A1671
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PDF
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