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    A17111 Search Results

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    A17111 Price and Stock

    Fairview Microwave Inc FMCA1711-12

    CBL ASSY TYPE NJACK-TNCPLUG 12
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    DigiKey FMCA1711-12 Bag 1
    • 1 $474.43
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    Newark FMCA1711-12 Bulk 18 1
    • 1 $480.7
    • 10 $449.18
    • 100 $391.39
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    RS FMCA1711-12 Bulk 8 Weeks 1
    • 1 $398
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    Fairview Microwave Inc FMCA1711-150CM

    CBL ASSY TYPE NJACK-TNCPLUG 59.0
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    DigiKey FMCA1711-150CM Bag 1
    • 1 $593.58
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    Newark FMCA1711-150CM Bulk 18 1
    • 1 $615.98
    • 10 $575.59
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    RS FMCA1711-150CM Bulk 8 Weeks 1
    • 1 $510.01
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    Fairview Microwave Inc FMCA1711-100CM

    CBL ASSY TYPE NJACK-TNCPLUG 39.3
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    DigiKey FMCA1711-100CM Bag 1
    • 1 $542.84
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    Newark FMCA1711-100CM Bulk 18 1
    • 1 $558
    • 10 $521.41
    • 100 $454.32
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    RS FMCA1711-100CM Bulk 8 Weeks 1
    • 1 $462
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    Advantech Co Ltd ITA-1711-10A1E

    ITA-1711 J1900 4G DDR3 2VGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ITA-1711-10A1E Bulk 1
    • 1 $722
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    A17111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for


    Original     		PDF MEST2GFC-10-25 26X12 A17111

    Untitled

    Abstract: No abstract text available
    Text: MEST2GFC-010-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for


    Original     		PDF MEST2GFC-010-25 26X12 A17111

    a1711

    Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
    Text: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance


    Original     		PDF ATP114 ENA1711 4000pF A1711-4/4 a1711 A1711-2 ENA1711 ATP114 A1711-1 A1711-3

    C01A

    Abstract: GaAs p-i-n diodes a1711
    Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with


    Original     		PDF MGPN0515-C12 MGPN0518-C12 MGPN1506-C12 MGPN1504-C01A MGPN1503-C01A A17111 C01A GaAs p-i-n diodes a1711

    A1711

    Abstract: No abstract text available
    Text: Ordering number : ENA1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance


    Original     		PDF ENA1711A ATP114 4000pF PW10s) PW10s, --15V, --28Aere A1711-7/7 A1711

    A1711

    Abstract: ATP114 A17113 A1711-2 A1711-3
    Text: ATP114 注文コード No. N A 1 7 1 1 三洋半導体データシート N ATP114 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=12mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4000pF(typ.)


    Original     		PDF ATP114 4000pF IT15710 IT15512 A1711-3/4 IT15513 A1711 ATP114 A17113 A1711-2 A1711-3

    Untitled

    Abstract: No abstract text available
    Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for


    Original     		PDF MEST2GFC-10-25 26X12 A17111

    Untitled

    Abstract: No abstract text available
    Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for


    Original     		PDF MEST2GFC-10-25 26X12 A17111

    Untitled

    Abstract: No abstract text available
    Text: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for


    Original     		PDF MEST2GFC-10-25 26X12 A17111

    A1711

    Abstract: A1711-3
    Text: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance


    Original     		PDF ENA1711 ATP114 4000pF PW10s) PW10s, A1711-4/4 A1711 A1711-3

    Untitled

    Abstract: No abstract text available
    Text: ATP114 Ordering number : ENA1711A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.)


    Original     		PDF ATP114 ENA1711A 4000pF A1711-7/7

    Untitled

    Abstract: No abstract text available
    Text: ATP114 Ordering number : ENA1711A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.)


    Original     		PDF ATP114 ENA1711A 4000pF 15etc. A1711-7/7