GE10016
Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001
Text: u i a u Q D P P n GE10015,16, 20.21.22.23 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 40-60 AMPS, 250 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultra sonic equipment and
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GE10015
S30fl
T0-204AE
tjs150Â
QEI00I5,
OEI0020
OE10022,
GE10016
GE10023
GE10020
GE10022
GEI0020
GE1001
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C5936
Abstract: C5929 C5931 CMZ5945B c5914 CMZ5925B CMZ5936B CMZ5930B CMZ5933B CMZ5953B
Text: Central CMZ5913B THRU CMZ5956B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 3.3 THRU 200 VOLTS ± 5% TOLERANCE FEATURES: • SUPER MINIATURE CASE • 200 WATTS OF TVS POWER • ± 5% TOLERANCE • SUPERIOR LOT TO LOT CONSISTENCY • LOW COST
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CMZ5913B
CMZ5956B
CMZ5950B
C5950B
CMZ5951B
C5951B
CMZ5952B
C5952B
CMZ5953B
C5953B
C5936
C5929
C5931
CMZ5945B
c5914
CMZ5925B
CMZ5936B
CMZ5930B
CMZ5933B
CMZ5953B
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C5936
Abstract: c5914 C5929 C5928 c5922 C5931 CMZ5913B CMZ5945B CMZ5923B CMZ5936B
Text: Central CMZ5913B THRU CMZ5956B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 3.3 THRU 200 VOLTS ± 5% TOLERANCE FEATURES: • SUPER MINIATURE CASE • 200 WATTS OF TVS POWER • ± 5% TOLERANCE • SUPERIOR LOT TO LOT CONSISTENCY • LOW COST
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CMZ5913B
CMZ5956B
CMZ5950B
C5950B
CMZ5951B
C5951B
CMZ5952B
C5952B
CMZ5953B
C5953B
C5936
c5914
C5929
C5928
c5922
C5931
CMZ5945B
CMZ5923B
CMZ5936B
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zener diode c 531
Abstract: 5 volts ZENER DIODE 10 -50mA CZRA4746 CZRA4756 CZRA4741 CZRA4742 CZRA4743 CZRA4744 ZRA4764 diode zener 30c
Text: SURFACE MOUNT ZENER DIODE COMCHIP www.comchip.com.tw CZRA4741 - CZRA4764 Voltage: 11- 100 Volts Power: 1.0 Watts FEATURES - For surf ace mounted applications in order to optimize board space - Low profile package - Built-in strain relief - Glass passiv ated junction
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CZRA4741
CZRA4764
DO-214AC
DO-214AC,
MDS0208021A
zener diode c 531
5 volts ZENER DIODE 10 -50mA
CZRA4746
CZRA4756
CZRA4742
CZRA4743
CZRA4744
ZRA4764
diode zener 30c
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zener diodes color coded
Abstract: colour code diode zener zener color codes ZENER SINGLE COLOR CODE 200V Zener Diode Zener Diode 39 volts 2 watts zener diode 1 watt 15v zener diode having 11 volts zener diode color code zener diode 68v
Text: SURFACE MOUNT GALSS PASSIVATED ZENER DIODE Zener Voltage MZ1.5PB11V-34.1 THRU MZ1.5PB200V-1.9 11 to 200 Volts Steady state Power 1.5 Watts FEATURES • • • • • • • • DO-214AA SMB For surface mounted applications in order to Optimize board space
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5PB11V-34
5PB200V-1
DO-214AA
MIL-STD-750,
zener diodes color coded
colour code diode zener
zener color codes
ZENER SINGLE COLOR CODE
200V Zener Diode
Zener Diode 39 volts 2 watts
zener diode 1 watt 15v
zener diode having 11 volts
zener diode color code
zener diode 68v
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Untitled
Abstract: No abstract text available
Text: 1N5913B THRU 1N5956B 3W SILICON ZENER DIODE VZ : 3.3 - 200 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99)
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1N5913B
1N5956B
DO-41
UL94V-0
MIL-STD-202,
spec00
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zener smd diode 101
Abstract: ZENER DIODE t2 201 Zener diode CZRC5348 CZRC5349 CZRC5350 CZRC5351 CZRC5352 CZRC5388 SMD DIODE 517
Text: COMCHIP Surface Mount Zener Diode SMD DIODE SPECIALIST CZRC5348 Thru CZRC5388 Voltage: 11 - 200 Volts Power: 5.0 Watts Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Built-in strain relief
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CZRC5348
CZRC5388
SMC/DO-214AB
-214AB
MIL-STD-750,
MDS0211013A
zener smd diode 101
ZENER DIODE t2
201 Zener diode
CZRC5349
CZRC5350
CZRC5351
CZRC5352
CZRC5388
SMD DIODE 517
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TUBE EL3
Abstract: transformateur THT tube el 36 miniwatt 137 tube cathodique PHILIPS amplificateur BF cathodique tube cathodique culot miniwat diode recepteur ir
Text: La p e n th o d e de sortie EL 3 à fo rte pente Le tube EL 3 est une penthode de sortie 9 watts à forte pente et à chauffage indirect. La tension de chauffage de cette lampe étant de 6,3 volts il est pos sible de l’utiliser pour des récepteurs alimentés sur sec
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Untitled
Abstract: No abstract text available
Text: SMA4735 THRU SMA4764 VOLTAGE 6 . 2 V ~ 100V Elektronische Bauelemente 1.0 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA FEATURES . For surface mounted applications . 1.0 W power dissipation . Low reverse current
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SMA4735
SMA4764
05-May-2009
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MJ10000
Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
Text: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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MJ10000/D*
MJ10000/D
MJ10000
MJ10001
1N4937
voltage regulators 6 amp to3
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3.3 volt zener diode
Abstract: SMA4764 SMA4747 SMA4735 ZENER 6.2V SMA sma4740 SMA4757 SMA475
Text: SMA4735 THRU SMA4764 VOLTAGE 6 . 2 V ~ 100V Elektronische Bauelemente 1.0 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA ●FEATURES . For surface mounted applications . 1.0 W power dissipation . Low reverse current
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SMA4735
SMA4764
05-Nov-2007
3.3 volt zener diode
SMA4764
SMA4747
ZENER 6.2V SMA
sma4740
SMA4757
SMA475
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MJ10009
Abstract: 1N4937 2N3762 MTP3055E
Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,
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MJ10009
MJ10009
r14525
MJ10009/D
1N4937
2N3762
MTP3055E
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varistor* s20
Abstract: ECG1V020 varistor S20 mov s20 ECG2V025 ECG4902 ECG4990 S201 ECG4934 S20 Metal Varistor
Text: Overvoltage Transient Suppressors Metal Oxide Varistors MOV Maximum Voltage ECG Type RMS VACM (Volts) DC V dcm (Volts) Clamping VCL (Volts) Nominal Varistor Voltage V nom Volts Energy W tm (Joules) Peak Current Itm (Amps) Transient Power Dissipation Pd (Watts)
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ECG1V010
ECG2V010
S11-2
ECG1V014
ECG2V014
ECG1V015
S11-1
ECG2V015
varistor* s20
ECG1V020
varistor S20
mov s20
ECG2V025
ECG4902
ECG4990
S201
ECG4934
S20 Metal Varistor
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transistor TIP 350
Abstract: TIPL763A tip 220 TIP 22 transistor STP54 TIPL763 STP51 stp52 transistor TIPL762 STI-17776
Text: SEMICONDUCTOR TECHNOLOGY DSE D I □□□□234 7 J ^ ñl3b4Sñ T - 33-01 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS EPOXY CASES Industry Type Rower Iltslpilloi @25 “C watts VCEV (volts) vCEO (volts) (volts) mA (Min.) A (volts) (volts) A STI-17775*2
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DDDG234
33-Ol
STI-17775
STI-17776
STI-17777"
STI-17778*
STP47
STI-17777
transistor TIP 350
TIPL763A
tip 220
TIP 22 transistor
STP54
TIPL763
STP51
stp52 transistor
TIPL762
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Untitled
Abstract: No abstract text available
Text: 05347 PAM03SD2303CI Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The PAM03SD2303CI is an ultra low capacitance transient voltage suppressor array, designed to protect automotive applications. This device is available in a bidirectional configuration and is rated at 250 Watts for an 8/20µs waveshape.
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PAM03SD2303CI
PAM03SD2303CI
OD-323
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CZRC5348
Abstract: CZRC5349 CZRC5350 CZRC5351 CZRC5352 CZRC5388
Text: Surface Mount Zener Diode COMCHIP www.comchip.com.tw CZRC5348 Thru CZRC5388 Voltage: 11 - 200 Volts Power: 5.0 Watts Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Built-in strain relief
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CZRC5348
CZRC5388
SMC/DO-214AB
-214AB
MIL-STD-750,
MDS0211013A
CZRC5349
CZRC5350
CZRC5351
CZRC5352
CZRC5388
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1E-13
Abstract: GBLC05 GBLC05CI
Text: 05242 GBLC03I - GBLC24CI Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxxI and GBLCxxCI Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 250 Watts for an 8/20µs waveshape.
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GBLC03I
GBLC24CI
OD-323
1E-13
GBLC05
GBLC05CI
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .
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BUD44D2
St254
MTP8P10
500nH
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zener color codes
Abstract: colour code diode zener device code 150a ZENER SINGLE COLOR CODE 1SMA200Z zender colour code zener DATASHEET 741A 8 DEVICE MARKING CODE 150A zener diode code color
Text: 1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance
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1SMA4741
1SMA200Z
SMA/DO-214AC
MIL-STD-750,
EIA-481)
zener color codes
colour code diode zener
device code 150a
ZENER SINGLE COLOR CODE
1SMA200Z
zender
colour code zener
DATASHEET 741A 8
DEVICE MARKING CODE 150A
zener diode code color
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2EZ11
Abstract: 2EZ12 2EZ13 2EZ14 2EZ15 2EZ16 2EZ200 circuit with thermocouple application
Text: 2EZ11 THRU 2EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts FEATURES l Low profile package l Built-in strain relief l l Glass passivated junction Low inductance l l Excellent clamping capability Typical ID less than 1 £gA above 11V
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2EZ11
2EZ200
DO-15
DO-15,
MIL-STD-750,
2EZ12
2EZ13
2EZ14
2EZ15
2EZ16
2EZ200
circuit with thermocouple application
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA byBUD44D2/D BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient
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BUD44D2
BUD44D2
69A-13
2PHX34547C--
BUD44D2/D
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1SMB2EZ11
Abstract: 1SMB2EZ12 1SMB2EZ13 1SMB2EZ14 1SMB2EZ15 1SMB2EZ200
Text: 1SMB2EZ11 THRU 1SMB2EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts FEATURES l Low profile package l Built-in strain relief l l Glass passivated junction Low inductance l l Excellent clamping capability Typical ID less than 1 £gA above 11V
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1SMB2EZ11
1SMB2EZ200
DO-214AA
DO-214AA,
MIL-STD-750,
EIA-481)
1SMB2EZ12
1SMB2EZ13
1SMB2EZ14
1SMB2EZ15
1SMB2EZ200
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1SMB5913B
Abstract: 1SMB5914B 1SMB5915B 1SMB5916B 1SMB5917B 1SMB5918B 1SMB5919B 1SMB5956B
Text: 1SMB5913B THRU 1SMB5956B 3W SURFACE MOUNT SILICON ZENER DIODE SILICON ZENER DIODES SMB DO-214AA 5 .4 ± 0 . 2 VZ : 3.3 - 200 Volts PD : 3.0 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * Flat handling surface for accurate placement
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1SMB5913B
1SMB5956B
DO-214AA)
UL94V-O
1SMB5948B
1SMB5949B
1SMB5950B
1SMB5914B
1SMB5915B
1SMB5916B
1SMB5917B
1SMB5918B
1SMB5919B
1SMB5956B
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TLP 527
Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535
Text: kn| I SEnlCONDUCTOR TECHNOLOGY OSE D | fll3bM5fl □ D□ □ B5 *4 M [ 1 ^ * T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673
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T-53--0/
2N6672
2N6673
2N6674
2N6675
2N6676
TLP 527
IR5065
transistor TIP 350
TLP-531
ST555
IR5061
IR5066
ST-550
TLP 535
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