ixys vub 70 -16no1
Abstract: sensor marking code 145A VUB145-16NOXT
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
|
Original
|
145-16NO1
VUB145-16NO1
E72873
20101007a
ixys vub 70 -16no1
sensor marking code 145A
VUB145-16NOXT
|
PDF
|
145-16NO1
Abstract: VUB145-16NO1 vub 70 ic MARKING QG E72873 ixys vub 70 -16no1 vub14516no1 sensor marking code 145A
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
|
Original
|
145-16NO1
VUB145-16NO1
E72873
20101007a
145-16NO1
VUB145-16NO1
vub 70
ic MARKING QG
E72873
ixys vub 70 -16no1
vub14516no1
sensor marking code 145A
|
PDF
|
ixys vub 70 -16no1
Abstract: VUB145 VUB145-16NO1 145-16NO1 VUB145-16NOXT E72873 marking ntc 80 ntc application
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
|
Original
|
145-16NO1
VUB145-16NO1
E72873
powe00
20101007a
ixys vub 70 -16no1
VUB145
VUB145-16NO1
145-16NO1
VUB145-16NOXT
E72873
marking ntc 80
ntc application
|
PDF
|
VUB145-16NOXT
Abstract: fast recovery Diode 1200V 200A
Text: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
|
Original
|
145-16NOXT
VUB145-16NOXT
E72873
20110907b
VUB145-16NOXT
fast recovery Diode 1200V 200A
|
PDF
|
VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
|
Original
|
145-16NOXT
VUB145-16NOXT
E72873
20110907b
VUB145-16NOXT
|
PDF
|
vub145-16noxt
Abstract: vub 145-16noxt
Text: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
|
Original
|
145-16NOXT
VUB145-16NOXT
E72873
20110307a
vub145-16noxt
vub 145-16noxt
|
PDF
|
diode BY 028
Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
Text: New Product Announcement Sample Devices Reduce your board space requirements with available Ultramini upon request. TM SOD-523 Actual Size Available technologies include: Switching Diode Schottky Diode High Voltage Switching Diode Ultra Low Leakage Switching Diode
|
Original
|
OD-523
OD-123
OD-323.
OD-323
OD-523
-SOD-523
diode BY 028
631 DIODE SMD
SMD Diode 631
SMD Switching diode SOD323
DIODE 33 25
SWITCHING DIODE
ny smd transistor
SOD-123
CMOD2004
BY 225 diode
|
PDF
|
"Schottky Diode"
Abstract: SOD-923 ultra low forward voltage schottky diode sod923 Schottky Diode diode CMAD6001 CMAD4448 CMAD6263 specifications of schottky diode
Text: FEMTOmini_SOD-923_Diodes 2/1/08 10:21 AM Page 1 PRODUCT announcement FEMTOmini Diodes in the SOD-923 package CMAD4448 Switching Diode CMAD6001 (Low Leakage Diode) SOD-923 Enlarged CMASH-4 (Schottky Diode) CMAD6263 Actual Size Sample Devices (Schottky Diode)
|
Original
|
OD-923
CMAD4448
CMAD6001
OD-923
CMAD6263
"Schottky Diode"
SOD-923
ultra low forward voltage schottky diode
sod923
Schottky Diode
diode
CMAD6001
CMAD4448
CMAD6263
specifications of schottky diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
WT-Z108P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
|
PDF
|
IDW40G120C5B
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
|
Original
|
IDW40G120C5B
IDW40G120C5B
|
PDF
|
3.2 v zener diode
Abstract: No abstract text available
Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
WT-Z108P-AU
3.2 v zener diode
|
PDF
|
WT-Z108P
Abstract: No abstract text available
Text: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
WT-Z108P-4
WT-Z108P
|
PDF
|
zener diode chip
Abstract: WT-Z108P-AU4
Text: WT-Z108P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU4 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
WT-Z108P-AU4
zener diode chip
WT-Z108P-AU4
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 1000V 2x40A APT40DQ100BCT APT40DQ100BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters
|
Original
|
2x40A
APT40DQ100BCT
APT40DQ100BCTG*
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200V 2x15A APT15D20BCT APT15D20BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters
|
Original
|
2x15A
APT15D20BCT
APT15D20BCTG*
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200V 2x30A APT30D20BCT APT30D20BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters
|
Original
|
2x30A
APT30D20BCT
APT30D20BCTG*
O-247
|
PDF
|
APT2x151DL60J
Abstract: H100
Text: APT2X151DL60J 600V 150A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Free Wheeling Diode
|
Original
|
APT2X151DL60J
APT2x151DL60J
H100
|
PDF
|
ULTRAFAST RECTIFIER 16A 600V vf 1.7
Abstract: APT6038BLL APT8DQ60K3CT APT8DQ60K3CTG
Text: 600V 8A APT8DQ60K3CT APT8DQ60K3CTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
|
Original
|
APT8DQ60K3CT
APT8DQ60K3CTG*
O-220
O-220
ULTRAFAST RECTIFIER 16A 600V vf 1.7
APT6038BLL
APT8DQ60K3CT
APT8DQ60K3CTG
|
PDF
|
CD61
Abstract: CS61 E78240 powerex cd61
Text: CD61_16B, CS61_16B CN61_16B, CC61_16B POW-R-BLOKTM Dual & Single Diode Isolated Module 160 Amperes / Up to 2200 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode & Single Diode
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200V 30A APT30D20B APT30D20S APT30D20BG* APT30D20SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers
|
Original
|
APT30D20B
APT30D20S
APT30D20BG*
APT30D20SG*
O-247
|
PDF
|
Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
|
PDF
|
T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LASER DIODE INC 15E D I 5345=145 OODOHE1! 1 I LCW-10 LASER DIODE. LCW-1 OF r - Ÿ i - 0 5 - 830nm Multi-Mode CW Injection Laser FEATURES ► CW Operation ► Low Threshold Current
|
OCR Scan
|
LCW-10
830nm
|
PDF
|
