Untitled
Abstract: No abstract text available
Text: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 IGBT Module SK 50 MLI 066 899 4 1; $ . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0 ! 4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units
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Diode P 619
Abstract: EIA-541 IRFR120 IRFU120 U120 marking code diode 14
Text: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9110PbF 2 www.irf.com IRFR/U9110PbF www.irf.com 3 IRFR/U9110PbF 4 www.irf.com IRFR/U9110PbF www.irf.com 5 IRFR/U9110PbF 6 www.irf.com IRFR/U9110PbF Peak Diode Recovery dv/dt Test Circuit
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5324A
IRFR9110PbF
IRFU9110PbF
IRFR/U9110PbF
ISD10PbF
Diode P 619
EIA-541
IRFR120
IRFU120
U120
marking code diode 14
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Untitled
Abstract: No abstract text available
Text: SKM 400GB128D. Absolute Maximum Ratings Symbol Conditions IGBT % %56 7 9" 1 3 - 12*3 . / : 5&%:; < SPT IGBT Module Units /)* -#- 14*3 #* 8 )* 4* = > /-* 1/)-3 & & . 4* @A* 1)#*3 #* & & )A* & @A* 1)#*3
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400GB128D.
400GB128D
400GAL128D
400GAR128D
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Untitled
Abstract: No abstract text available
Text: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A
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IRFZ46NPbF
O-220
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VISHAY DATE CODE
Abstract: EIA-541 IRFR120 IRFU120 U120 IRFU120 vishay IRFRC20PBF
Text: PD - 95098A IRFRC20PbF IRFUC20PbF • Lead-Free 1/10/05 Document Number: 91285 www.vishay.com 1 IRFR/UC20PbF Document Number: 91285 www.vishay.com 2 IRFR/UC20PbF Document Number: 91285 www.vishay.com 3 IRFR/UC20PbF Document Number: 91285 www.vishay.com 4 IRFR/UC20PbF
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5098A
IRFRC20PbF
IRFUC20PbF
IRFR/UC20PbF
12-Mar-07
VISHAY DATE CODE
EIA-541
IRFR120
IRFU120
U120
IRFU120 vishay
IRFRC20PBF
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IRF540Z
Abstract: IRF540ZL IRF540ZS
Text: PD - 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D
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IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
AN-994.
O-220AB
IRF540Z
IRF540ZL
IRF540ZS
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IRGPS4067
Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Text: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM
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IRGPS4067DPbF
IRFPS37N50A
IRGPS4067
irgps4067d
CI 4000
J500
IRGPS
IRGPS4067DPBF
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AN-994
Abstract: IRF820A IRF820AL IRF820AS
Text: PD - 95533 IRF820ASPbF IRF820ALPbF SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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IRF820ASPbF
IRF820ALPbF
IRF820AS
O-262
IRF820AL
IRF820A
AN-994.
AN-994
IRF820AL
IRF820AS
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Untitled
Abstract: No abstract text available
Text: PM150CSD120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase IGBT Inverter Output 150 Amperes/1200 Volts A B H AA - DIA. (4 TYP.) W W Y Z 12 3 4 5678 9 11 13 15 17 19 N Q 1. V UPC 2. UFO 3. U P
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PM150CSD120
Amperes/1200
16oC/W
24oC/W
125oC
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VBE17-12NO7
Abstract: VUE22-12NO7
Text: VBE 17-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 19 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 17-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 19 90 A A IFSM TVJ = 45°C
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17-12NO7
VBE17-12NO7
VUE22-12NO7
VUE22-12NO7
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AN-994
Abstract: IRF3007L IRF3007S
Text: PD - 95494 IRF3007SPbF AUTOMOTIVE MOSFET IRF3007LPbF Typical Applications l l HEXFET Power MOSFET 42 Volts Automotive Electrical Systems Lead-Free D VDSS = 75V Features l l l l Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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IRF3007SPbF
IRF3007LPbF
EIA-418.
AN-994
IRF3007L
IRF3007S
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diode JD
Abstract: MUBW50-06A7 IGBT S 1377
Text: MUBW 50-06 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 D7 D15 7 1 2 3 D12 D14 D16 T1 D1 16 15 6 T7 14 23 T2 11 10 T3 18 17 D5 20 19 5 T4 D2 T5 D3 T6 D4 12 4 D6 13 24 8 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V
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MUBW5006A7
diode JD
MUBW50-06A7
IGBT S 1377
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Untitled
Abstract: No abstract text available
Text: SKDH 116/. -L100 %012 %002 % 02 3 4 ""$ 5 & % ",$$ % ".$$ 4 6$ 7 18 ""#9".:'"$$ ";$$ "#$$ 18 ""#9"#:'"$$ Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 3-Phase Bridge Rectifier + IGBT braking chopper
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-L100
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Schottky bridge
Abstract: 600 V power Schottky silicon carbide diode
Text: Advanced Technical Information FBS 10-06SC VRRM = 600 V Silicon Carbide Schottky Rectifier Bridge ID AV M = 6.6 A Cjunction = 9 pF in ISOPLUS i4-PACTM 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM 600 V IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode)
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10-06SC
10-06SC
Schottky bridge
600 V power Schottky silicon carbide diode
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Untitled
Abstract: No abstract text available
Text: SK 75 DGDL 066 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 1* * * *= 1 3 #/4*" & 3 #/ 896: 4*" ; 3 !9/ 4* 3 #/ 896: 4*" ; 3 !/6 4* *= 3 # ' * " 3 ! ;
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ene18
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Untitled
Abstract: No abstract text available
Text: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 012 # #67 0$12 !+ ,-./ Values ! + ,- 54 . #67+ , #/ + 3 !: Units 3,44 3- 33 84 9,4 % % ;<4 = >3-4
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IRG4PC50UDPBF
Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC50UDPbF
O-247AC
IRFPE30
IRG4PC50UDPBF
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
IRG4PC50
035H
IRFPE30
5A1000
irg4pc
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W12NK90Z
Abstract: STW12NK90Z W12NK w12nk90 NC 9615
Text: STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features Order code VDSS RDS on max STW12NK90Z 900 V < 0.88 Ω ID Pw 11 A 230 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized
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STW12NK90Z
O-247
W12NK90Z
STW12NK90Z
W12NK
w12nk90
NC 9615
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191-2N
Abstract: No abstract text available
Text: VBO 19 IdAVM = 21 A VRRM = 600-1200 V Single Phase Rectifier Bridge Preliminary data VRSM VRRM V V 700 900 1300 600 800 1200 D Type N A VBO 19-06NO7 VBO 19-08NO7 VBO 19-12NO7 K IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0 21 A t = 10 ms 50 Hz , sine
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19-06NO7
19-08NO7
19-12NO7
191-2N
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auirf7484q
Abstract: F7484Q AUIRF
Text: PD - 97757 AUTOMOTIVE GRADE AUIRF7484Q Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*
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AUIRF7484Q
auirf7484q
F7484Q
AUIRF
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ixys MCC 90
Abstract: mcc 250 thyristor MCC 90 12io8 95-16io1 MCC 90 THYRISTOR MODULE MCC 25 ixys MCC 90 12io8 ixys mcc mcc 95 08101b MCD 95 16
Text: MCC 95 MCD 95 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 180 A ITAVM = 2x 116 A VRRM = 800-1800 V VRSM VRRM VDSM VDRM TO-240 AA V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 2 Version 1 MCC MCC MCC MCC MCC 95-08io1 95-12io1 95-14io1 95-16io1
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O-240
95-08io1
95-12io1
95-14io1
95-16io1
95-18io1
95-12io1
95-16io1
95-08io8
95-12io8
ixys MCC 90
mcc 250 thyristor
MCC 90 12io8
MCC 90
THYRISTOR MODULE MCC 25
ixys MCC 90 12io8
ixys mcc
mcc 95 08101b
MCD 95 16
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
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AP4224aGM
Abstract: No abstract text available
Text: AP4224AGM RoHS-compliant Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 BVDSS 30V RDS ON 15mΩ ID SO-8 S1 S2 G1 9.2A G2 Description Advanced Power MOSFETs from APEC provide the
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AP4224AGM
100us
100ms
135/W
AP4224aGM
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : FTO-220 SF20SC9 Unit-mm Weight 1.9g Typ 4.5 90V 20A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrs m • 71 [ Æ - J U K • F u ll M o ld e d Rating • High lo R a tlng-S m all-P K G
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OCR Scan
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SF20SC9
FTO-220
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