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Infineon Technologies AG IRG4PC50U IGBT 600V 55A 200W TO247AC
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DigiKey	IRG4PC50U	Bag			125	1 - 10 - 100 - 1000 $3.44888 10000 $3.44888	Buy Now
Win Source Electronics	IRG4PC50U		2,472			1 - 10 $6.8876 100 $4.5917 1000 $4.5917 10000 $4.5917	Buy Now
Infineon Technologies AG IRG4PC50K IGBT 600V 52A 200W TO247AC
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DigiKey	IRG4PC50K	Bag			125	1 - 10 - 100 - 1000 $3.38768 10000 $3.38768	Buy Now
Infineon Technologies AG IRG4PC50KPBF IGBT 600V 52A 200W TO247AC
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DigiKey	IRG4PC50KPBF	Bag				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	IRG4PC50KPBF	Bulk			150	1 - 10 - 100 - 1000 $3.54 10000 $3.17	Get Quote
Rochester Electronics LLC IRG4PC50KPBF SHORT CIRCUIT RATED ULTRAFAST IG
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DigiKey	IRG4PC50KPBF	Bulk			133	1 - 10 - 100 - 1000 $2.26 10000 $2.26	Buy Now
Infineon Technologies AG IRG4PC50WPBF IGBT 600V 55A TO247AC
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DigiKey	IRG4PC50WPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRG4PC50 Datasheets (56)

Part	Manufacturer	Description	Datasheet Type	PDF
IRG4PC50	International Rectifier	Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V	Original	PDF
IRG4PC50F	International Rectifier	600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging	Original	PDF
IRG4PC50F	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4PC50F	International Rectifier	Fast Speed IGBT VCES = 600V, VCE(on) typ. =1.45V, atVGE = 15V, IC = 39A	Original	PDF
IRG4PC50FD	International Rectifier	600V Fast 1-8 kHz Copack IGBT in a TO-247AC package; A IRG4PC50FD with Standard Packaging	Original	PDF
IRG4PC50FD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT	Original	PDF
IRG4PC50FD	International Rectifier	Fast CoPack IGBT, VCES = 600V, VCE(on) typ. =1.45V, atVGE = 15V, IC = 39A	Original	PDF
IRG4PC50FD-E	International Rectifier	600V Fast 1-8 kHz Copack IGBT in a TO-247AC package; Similar to IRG4PC50FD in a TO-247AD package longer lead option 20mm.	Original	PDF
IRG4PC50FD-E	International Rectifier	600V Fast 1-8 kHz Copack IGBT in a TO-247AC package	Original	PDF
IRG4PC50FD-EPBF	International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 200W TO247AD	Original	PDF
IRG4PC50FDPBF	International Rectifier	600V Fast 1-8 kHz Copack IGBT in a TO-247AC package; Similar to IRG4PC50FD with Lead Free Packaging	Original	PDF
IRG4PC50FDPBF	International Rectifier		Original	PDF
IRG4PC50F-EPBF	International Rectifier	Gen 4 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package	Original	PDF
IRG4PC50FPBF	International Rectifier	600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC50F with Lead Free Packaging	Original	PDF

IRG4PC50FPBF	International Rectifier		Original	PDF
IRG4PC50K	International Rectifier	600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50K with Standard Packaging	Original	PDF
IRG4PC50K	International Rectifier	Insulated Gate Bipolar Transistor	Original	PDF
IRG4PC50KD	International Rectifier	600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package; A IRG4PC50KD with Standard Packaging	Original	PDF
IRG4PC50KD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF
IRG4PC50KD	International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	Original	PDF

IRG4PC50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRG4PC50U Abstract: IRG4PC50 Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91470F IRG4PC50U O-247AC O-247AC IRG4PC50U IRG4PC50	PDF
IRG4PC50S-P Abstract: IRG4PC50S IRG4PC50 Text: PD - 91581B IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91581B IRG4PC50S-P O-247AC O-247 IRG4PC50S-P IRG4PC50S IRG4PC50	PDF
IRG4PC50F Abstract: GE40-20 Text: PD 91468C IRG4PC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91468C IRG4PC50F O-247AC O-247AC IRG4PC50F GE40-20	PDF
IRG4PC50KDPBF Abstract: 035H IRFPE30 Text: PD- 95235 IRG4PC50KDPbF • Lead-Free www.irf.com 1 05/04/04 IRG4PC50KDPbF 2 www.irf.com IRG4PC50KDPbF www.irf.com 3 IRG4PC50KDPbF 4 www.irf.com IRG4PC50KDPbF www.irf.com 5 IRG4PC50KDPbF 6 www.irf.com IRG4PC50KDPbF www.irf.com 7 IRG4PC50KDPbF 8 www.irf.com	Original	IRG4PC50KDPbF IRG4PC50KDPBF 035H IRFPE30	PDF
IC OZ 9936 Abstract: IRG4PC50K IRGPC50K IRGPC50M 91583B Text: PD - 91583B IRG4PC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high	Original	91583B IRG4PC50K IC OZ 9936 IRG4PC50K IRGPC50K IRGPC50M 91583B	PDF
IRG4PC50FD Abstract: No abstract text available Text: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20	Original	IRG4PC50FD O-247AC IRG4PC50FD	PDF
Untitled Abstract: No abstract text available Text: PD - 96168 IRG4PC50F-EPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4PC50F-EPbF O-247AD O-247AD	PDF
Untitled Abstract: No abstract text available Text: PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated	Original	-91582B IRG4PC50KD O-247AC	PDF
Untitled Abstract: No abstract text available Text: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91469B IRG4PC50FD O-247AC O-247AC	PDF
IGBT 200V 50A Abstract: No abstract text available Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz IGBT co-packaged with HEXFREDTM ultrafast,	Original	IRG4PC50SDPbF O-247AC IGBT 200V 50A	PDF
035H Abstract: IRFPE30 Text: PD - 95131 IRG4PC50SPbF • Lead-Free 1 IRG4PC50SPbF 2 IRG4PC50SPbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217)	Original	IRG4PC50SPbF O-247AC O-247-AC. IRFPE30 035H IRFPE30	PDF
035H Abstract: MB 39A 25 diodes 39a transistor WW 179 Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	IRG4PC50FDPbF O-247AC 035H MB 39A 25 diodes 39a transistor WW 179	PDF
400v 20A ultra fast recovery diode Abstract: IGBT WE 20 NE 50 Z 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST irf 100v 200A IRG4PC50 irg4pc50fd IRG4PC50FDPbF marking code 39a Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	IRG4PC50FDPbF O-247AC 400v 20A ultra fast recovery diode IGBT WE 20 NE 50 Z 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST irf 100v 200A IRG4PC50 irg4pc50fd IRG4PC50FDPbF marking code 39a	PDF
DIODE RECTIFIER BRIDGE SINGLE 55a 600v Abstract: IRG4PC50UDPBF power Diode 200V 10A RECTIFIER BRIDGE 25A 600V tu marking ultrafast diode 10a 400v 035H IRFPE30 Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	IRG4PC50UDPbF O-247AC IRFPE30 DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50UDPBF power Diode 200V 10A RECTIFIER BRIDGE 25A 600V tu marking ultrafast diode 10a 400v 035H IRFPE30	PDF

IRG4PC50UDPBF Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	Original	IRG4PC50UDPbF O-247AC IRFPE30 IRG4PC50UDPBF DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc	PDF
TRANSISTOR PEC 545 Abstract: IRG4PC50S 3p transistor Text: PD - 91581A IRG4PC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	1581A IRG4PC50S O-247AC O-247AC TRANSISTOR PEC 545 IRG4PC50S 3p transistor	PDF
IRG4PC50F Abstract: No abstract text available Text: PD 91468C IRG4PC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	91468C IRG4PC50F O-247AC O-247AC IRG4PC50F	PDF
IRG4PC50F Abstract: 80UF Text: Previous Datasheet Index Next Data Sheet PD - 9.1468A IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	IRG4PC50F O-247AC O-247AC IRG4PC50F 80UF	PDF
IGBT IRG4PC50UD Abstract: IRG4PC50UD Text: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	Original	IRG4PC50UD O-247AC IGBT IRG4PC50UD IRG4PC50UD	PDF
IRG4PC50FD Abstract: No abstract text available Text: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter	Original	91469B IRG4PC50FD O-247AC O-247AC IRG4PC50FD	PDF
39AE Abstract: transistor WW 179 035H IRFPE30 td 4100 application Text: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4PC50FPbF O-247AC O-247AC IRFPE30 39AE transistor WW 179 035H IRFPE30 td 4100 application	PDF
IRG4PC50KD Abstract: No abstract text available Text: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,	OCR Scan	IRG4PC50KD IRG4PC50KD	PDF
Untitled Abstract: No abstract text available Text: PD-9.1583 International TOR Rectifier IRG4PC50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 [is@ 125°C, VGE = 15V	OCR Scan	IRG4PC50K O-247AC	PDF
250VJA Abstract: irg4pc50u equivalent Text: International IGR Rectifier PD-9.1470E IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter	OCR Scan	1470E IRG4PC50U O-247AC 250VJA irg4pc50u equivalent	PDF

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IRG4PC50 Price and Stock

Infineon Technologies AG IRG4PC50U

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IRG4PC50 Datasheets (56)

IRG4PC50 Datasheets Context Search

IRG4PC50U

IRG4PC50S-P

IRG4PC50F

IRG4PC50KDPBF

IC OZ 9936

IRG4PC50FD

Untitled

Untitled

Untitled

IGBT 200V 50A

035H

035H

400v 20A ultra fast recovery diode

DIODE RECTIFIER BRIDGE SINGLE 55a 600v

IRG4PC50UDPBF

TRANSISTOR PEC 545

IRG4PC50F

IRG4PC50F

IGBT IRG4PC50UD

IRG4PC50FD

39AE

IRG4PC50KD

Untitled

250VJA