KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C914 TECHNICAL DATA DATASHEET 4230, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED MAXIMUM RATINGS RATING
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1C914
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1c4148
Abstract: No abstract text available
Text: 1C4148 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED RATING
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1C4148
1c4148
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C3595 TECHNICAL DATA DATASHEET 4228, Rev- LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE DROP DIODE DESCRIPTION: A 150 VOLT, 0.15 AMP, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE DROP DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED
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1C3595
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d06s60
Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDB06S60
P-TO220-3
Q67040-S4370
D06S60
d06s60
diode schottky 600v
T-1228
SDB06S60
SDP06S60
smd diode marking code UJ
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D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDB06S60
Q67040-S4370
D06S60
D06S60
Q67040-S4370
P-TO263-3-2
T-1228
SDB06S60
SDP06S60
smd schottky diode marking 6a
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THOMSON-CSF Power Laser diode
Abstract: collimated TH-C1725-P
Text: TH-C1725-PO 25W CW COLLIMATED LINEAR BAR ARRAY DESCRIPTION The TH-C1725-PO product is a highly performing 25W CW Collimated Laser Diode Bar Array assembled on a water cooled package. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1725-PO
TH-C1725-PO
THOMSON-CSF Power Laser diode
collimated
TH-C1725-P
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tc106
Abstract: DD200KB160 FORWARD REVERSE 3 PHASE MOTOR DD200KB40 DD200KB80 DD200KB DD200KB120
Text: DIODE MODULE DD200KB UL;E76102 （M） Power Diode Module DD200KB Series are designed for various rectifier circuits. DD200KB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to,
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DD200KB
E76102
DD200KB
tc106
DD200KB160
FORWARD REVERSE 3 PHASE MOTOR
DD200KB40
DD200KB80
DD200KB120
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Untitled
Abstract: No abstract text available
Text: TH-C1725-PO ACTIVELY COOLED 25W CW COLLIMATED LINEAR BAR ARRAY DESCRIPTION The TH-C1725-PO product is a highly performing 25W CW Collimated Laser Diode Bar Array assembled on a water cooled package. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".
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TH-C1725-PO
TH-C1725-PO
8005-ed2
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Untitled
Abstract: No abstract text available
Text: TH-C1840-P / TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1840-P
TH-C1840-R
8021-ed2
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THOMSON-CSF Power Laser diode
Abstract: cogema 4210X
Text: TH-C1420-R n ACTIVELY COOLED 20W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1420-R(n) product is based upon a highly performing 20W CW Laser Diode Bar Array. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The bar is mounted with the active zone
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TH-C1420-R
THOMSON-CSF Power Laser diode
cogema
4210X
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diode 8008
Abstract: TH-C1725-P TH1725
Text: TH-C1725-S &TH-1725-P / TH-C1730-S &TH-C1730-P 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1xx-S or P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm
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TH-C1725-S
TH-1725-P
TH-C1730-S
TH-C1730-P
79ver
8008-ed3
diode 8008
TH-C1725-P
TH1725
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marking tp sot23-6
Abstract: MARKING 53 SOT23-6 SOT23-6 MARKING DIODE V38 marking DIODE sot23-6 js marking SOT23-6 Marking TM SP3050 Marking c9 SOT23-6 A2 marking diode esd diode sot23-6
Text: SPA TVS Diode Array Products Low Capacitance Diode Array for ESD and Surge Protection SP3050 SERIES RoHS Pb GREEN The SP3050 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can
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SP3050
5/50ns)
4NBMM405QBDLBHJOH
SP3050-04HTG
OT23-6
OT-23
180mm
EIA-481
marking tp sot23-6
MARKING 53 SOT23-6
SOT23-6 MARKING
DIODE V38 marking
DIODE sot23-6 js marking
SOT23-6 Marking TM
Marking c9 SOT23-6
A2 marking diode
esd diode sot23-6
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A6 diode
Abstract: CIB 47 B4 diode
Text: SKN 70 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Rectifier Diode ! ! .! 3 7 1 8 *
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TS DIODO
Abstract: LB1105M IC 3263 6-Channel
Text: O rde rin g n u m b e r: EN 3263 LB1105M No.3263 Monolithic D igital IC SA%YO 6-Channel X 4-Unit Diode Array i Ä>The LB1105M is a diode a rra y 1C th a t integrates 4 units of 6-channel diode a rra y w ith anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR g ^ Î^ a p p lip tio n ^ i Replacem ent of
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LB1105M
LB1105M
MFP30SD
1260TA
TS DIODO
IC 3263
6-Channel
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Untitled
Abstract: No abstract text available
Text: Ì S R m HHÌ NEC PHOTO DIODE H SU «* PH502HC 1C BU8LT-ÍN PHOTO DIODE NEPOC SERIES The PH502HC is a digital-output light receiving 1C integrating a photo diode and signal processing circuit in a chip. And the direct connection with an 1C without using a processing circuit simplifies the circuit configuration. It is the most suitable as
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PH502HC
PH502HC
SE308
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LED pigtailed
Abstract: Diode PH 13M
Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier
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STM-4/OC-12,
LED pigtailed
Diode PH 13M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8573FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8573FN High-Frequency Modulation 1C for Laser Diode The TA8573FN is a high frequency modulation 1C for laser diode. This product is designed for PUH Pick Up Head of optical disc drive.
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TA8573FN
TA8573FN
150MHz
400MHz.
50mAp-p.
30mAp-p.
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75V 150mA Diode
Abstract: No abstract text available
Text: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery
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150mA
1N4153,
1N4534,
1N4534
MIL-S-19500/337
DO-34
DO-35
02X73
75V 150mA Diode
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CL67
Abstract: 32MHz quartz RESONATOR 550KQ
Text: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output
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250mA
500/iA
CL67
32MHz quartz RESONATOR
550KQ
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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diode kep
Abstract: No abstract text available
Text: - 30E D • bMS7555 POSSESS 7 ■ N E C ELECTRONICS INC T'HhO*? LASER DIODE J NDL5003D 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTION NDL5003D is a 1300 nm laser diode especially designed for long distance high capacity transmission systems. The DC*PBH
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S7555
NDL5003D
NDL5003D
NDL5003D,
NDL5003D1.
diode kep
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 483401 SFH 483406 GaAlAs-LASER DIODE 1000 mW WITH FC-CONNECTOR 750 m W 2 Package Dimensions in mm SFH 483401 1 2 3 4 SFH 483406 11.7 ±0 3 NC NTC NTC laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode NC ' 59
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A53b3Eb
aE3b32b
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6CG3
Abstract: 6CG3 tube E12-70 general electric
Text: — PRODUCT INFORMATION — Page 1 6CG3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS • LOW TUBE DROP • 5000 VOLTS DC • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC The 6CG3 is a compactron containing a single heater-cathode type diode. It is intended
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