Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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1N5411
Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
Text: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A
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1N3299
1N3300
1N3300A
1N3301
1N3302
1N3302A
1N3303
1N3303A
1N3304
1N5411
1N5760
DIODE GE
103717
1N5758
1N5761
germanium
motorola 2n491
1N5759
Hitron
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SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
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SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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8P-1N5408
Abstract: No abstract text available
Text: Extract from the online catalog EMG 45-DIO 8P-1N5408 Order No.: 2954879 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, common cathode, diode type 1N
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45-DIO
8P-1N5408
IF-2009)
8P-1N5408
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5408 diode
Abstract: diode 5408 in 5408 diode 45-DIO DIODE N 5408 DIODE IN 5408 1N5408 equivalent diode 1n5408 8E-1N5408 diode Catalog
Text: Extract from the online catalog EMG 45-DIO 8E-1N5408 Order No.: 2949389 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, can be individually wired, diode type
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45-DIO
8E-1N5408
IF-2009)
8E-1N5408
5408 diode
diode 5408
in 5408 diode
DIODE N 5408
DIODE IN 5408
1N5408 equivalent
diode 1n5408
diode Catalog
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2949389
Abstract: 5408 diode
Text: Extract from the online catalog EMG 45-DIO 8E-1N5408 Order No.: 2949389 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, can be individually wired, diode type
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45-DIO
8E-1N5408
IF-2009)
8E-1N5408
2949389
5408 diode
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 45-DIO 8P-1N5408 Order No.: 2954879 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, common cathode, diode type 1N
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45-DIO
8P-1N5408
IF-2009)
8P-1N5408
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 45-DIO 8M-1N5408 Order No.: 2954882 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, common anode, diode type 1N 5408
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45-DIO
8M-1N5408
IF-2009)
8M-1N5408
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 22-DIO 4P-1N5408 Order No.: 2952198 The illustration shows version EMG 22-DIO 4E Diode module, with four diodes, common cathode, diode type 1N 5408
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22-DIO
4P-1N5408
IF-2009)
4P-1N5408
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diode marking DEC
Abstract: 4E-1N5408
Text: Extract from the online catalog EMG 22-DIO 4E-1N5408 Order No.: 2952790 The illustration shows version EMG 22-DIO 4E Diode module, with 4 diodes, individually wired, diode type 1N 5408
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22-DIO
4E-1N5408
IF-2009)
4E-1N5408
diode marking DEC
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 22-DIO 4M-1N5408 Order No.: 2952211 The illustration shows version EMG 22-DIO 4E Diode module, with four diodes, common anode, diode type 1N 5408
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22-DIO
4M-1N5408
IF-2009)
4M-1N5408
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45-DIO
Abstract: No abstract text available
Text: Extract from the online catalog EMG 45-DIO 8M-1N5408 Order No.: 2954882 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, common anode, diode type 1N 5408
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45-DIO
8M-1N5408
IF-2009)
8M-1N5408
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 22-DIO 4E-1N5408 Order No.: 2952790 The illustration shows version EMG 22-DIO 4E Diode module, with 4 diodes, individually wired, diode type 1N 5408
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22-DIO
4E-1N5408
IF-2009)
4E-1N5408
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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1N5429
Abstract: No abstract text available
Text: 1N5429 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleDO-7 Mounting StyleT DescriptionMax.Rad.Level-300T NVT;Post Rad.BV-200V;VF-1.5V;IR-50nA;Ct-6.0pf.
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1N5429
Level-300T
BV-200V
IR-50nA
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BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
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1N4007 ZENER DIODE
Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N5400
1N5401
1N5402
1N4007 ZENER DIODE
diode A14A
diode
st4 diac
diode a15a
zener db3
zener diode 1n4744
diode zener 1n4002
zener diode 5A
zener 400v
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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