frequency stability analysis colpitts oscillator
Abstract: phase detector 10khz Colpitts VCO design Colpitts colpitts oscillator LMH6624 LMK03000 LMX2531 LP5900 noise diode
Text: Local oscillator Characteristics and design considerations Varactor diode • Also named as variable capacitance diode • Diode capacitance changes with reverse bias • Used as a variable capacitor • A capacitor in parallel with an inductor forms a tank circuit
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200Hz
500KHz
LMK03000
frequency stability analysis colpitts oscillator
phase detector 10khz
Colpitts VCO design
Colpitts
colpitts oscillator
LMH6624
LMX2531
LP5900
noise diode
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Untitled
Abstract: No abstract text available
Text: ISL9K3060G3 30A, 600V Stealth Dual Diode General Description Features The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K3060G3
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K18120G3
Abstract: No abstract text available
Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K18120G3
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K18120G3
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G8060
Abstract: ruru8060 RUR 0820 TB-01
Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number
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G8060
RURU8060
RURU8060
G8060
RUR 0820
TB-01
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Untitled
Abstract: No abstract text available
Text: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K1560G3
ISL9K1560G3
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URU100120
Abstract: RURU100120
Text: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURU100120
RURU100120
125ns)
125ns
URU100120
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RURU50100
Abstract: No abstract text available
Text: RURU50100 Data Sheet January 2002 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU50100
RURU50100
125ns)
125ns
175oC
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Untitled
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG80100
RURG80100
125ns)
125ns
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RURU50120
Abstract: TA49099
Text: RURU50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURU50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU50120
RURU50120
125ns)
125ns
175oC
TA49099
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU150120
RURU150120
200ns)
200ns
175oC
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600v 30a IGBT
Abstract: RURG3060
Text: RURG3060 Data Sheet January 2000 File Number 3212.2 30A, 600V Ultrafast Diode Features The RURG3060 is an ultrafast diode with soft recovery characteristics trr < 55ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURG3060
RURG3060
600v 30a IGBT
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PLD-500
Abstract: PLD-10 M317 pld connector trimpot horizontal PLD-5000
Text: PLD Series Laser Diode Drivers General Description Features The PLD Series Laser Diode Drivers combine the high performance you expect from a Wavelength component with two distinct improvements: low voltage operation from +5 V DC, and an Active Current Limit.
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13-Nov-08
17-Feb-09
29-Jun-09
31-Aug-09
PLD5000-00400-A
PLD-200
PLD-500/
PLD-1250
PLD-5000
PLD-10000
PLD-500
PLD-10
M317
pld connector
trimpot horizontal
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RURP4120CC
Abstract: TA49036
Text: RURP4120CC Data Sheet January 2000 File Number 4050.1 4A, 1200V Ultrafast Dual Diode Features The RURP4120CC is an ultrafast dual diode with soft recovery characteristics trr < 70ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted
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TA49036
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RURU50100
Abstract: No abstract text available
Text: RURU50100 Data Sheet January 2000 File Number 3376.3 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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125ns)
125ns
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R1560S
Abstract: Application of irf840 IRF840 ISL9R1560S2 TA49410 TB334
Text: ISL9R1560S2 Data Sheet May 2001 15A, 600V Stealth Diode Features itle UF7 3P The ISL9R1560S2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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R1560S
Application of irf840
IRF840
TA49410
TB334
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RURG30120CC
Abstract: URG30120C
Text: RURG30120CC Data Sheet January 2000 File Number 3400.3 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted
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RURG30120CC
110ns)
110ns
URG30120C
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RURG30100
Abstract: TA09904
Text: RURG30100 Data Sheet January 2000 File Number 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG30100
110ns)
110ns
TA09904
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R3060P2
Abstract: R3060P ISL9R3060P2 TB334
Text: ISL9R3060P2 Data Sheet May 2001 30A, 600V Stealth Diode Features itle UF7 3P The ISL9R3060P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R3060P2
ISL9R3060P2
R3060P2
R3060P
TB334
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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Untitled
Abstract: No abstract text available
Text: ELM185xB Laser Diode Driver •General description ELM185xB is a bipolar type laser diode driver IC with internal APC circuit which consists of a reference voltage source, an error amplifier, and a thermal shutdown circuit for protection. With reference voltage source,
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400mA
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RURH15100CC
Abstract: URH15100C
Text: RURH15100CC Data Sheet January 2002 15A, 1000V Ultrafast Dual Diode Features The RURH15100CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURH15100CC
RURH15100CC
100ns)
100ns
175oC
URH15100C
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r1560g2
Abstract: No abstract text available
Text: ISL9R1560G2 TM Data Sheet November 2000 File Number 4912.1 15A, 600V Stealth Diode Features The ISL9R1560G2 is a Stealth diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current IRRM and
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ISL9R1560G2
175oC
r1560g2
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RURP1560
Abstract: TA09905
Text: RURP1560 Data Sheet August 2004 15A, 400V - 600V Ultrafast Diode Features The RURP1560 is an ultrafast diode trr < 55ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP1560
TA09905
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RURU5060
Abstract: TA9909
Text: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU5060
TA9909
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