biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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Original
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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PDF
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BY 255 diode
Abstract: High power laser diode SLD202U SLD202V diode marking code 77 pd 69 diode 820 nm laser diode sony lasers diode MARKING CODE 4W diode anode common
Text: SLD202U/V 25mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD202U/V is a gain-guided high-power laser diode fabricated by MOCVD. SLD202U M-221 SLD202V M-248 Features High power laser diode with the excellent general
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Original
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SLD202U/V
SLD202U/V
SLD202U
M-221
SLD202V
M-248
M-221
LO-11)
BY 255 diode
High power laser diode
SLD202U
SLD202V
diode marking code 77
pd 69 diode
820 nm laser diode
sony lasers diode
MARKING CODE 4W diode anode common
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PDF
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laser diode for printer
Abstract: laser printer high voltage diagram block diagram of diode operation laser diode 760 Laser Diode 10 pin laser diode 780 nm SLD201U SLD201V laser diode laser printer circuit diagram
Text: SLD201U/V 20mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD201U/V is a gain-guided high-power laser diode fabricated by MOCVD. SLD201U M-221 SLD201V M-248 Features High power laser diode with the excellent general
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Original
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SLD201U/V
SLD201U/V
SLD201U
M-221
SLD201V
M-248
M-221
LO-11)
laser diode for printer
laser printer high voltage diagram
block diagram of diode operation
laser diode 760
Laser Diode 10 pin
laser diode 780 nm
SLD201U
SLD201V
laser diode
laser printer circuit diagram
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PDF
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C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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Original
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EN935B
SVC333
SVC333
SVC333]
C10V
C25V
IN 4004 diode
diode IN 4004
3662 diode
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PDF
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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Original
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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PDF
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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Original
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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PDF
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BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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Original
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M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
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PDF
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diode Marking code v3
Abstract: ,diode Marking code v3 marking code diode V3 SLD202U SLD202U-3 SLD202V-3 820 nm laser diode
Text: SLD202U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description SLD202U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD202U-3 M-221 SLD202V-3 M-248 Features High power laser diode with the excellent general
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Original
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SLD202U-3/V-3
SLD202U-3/V-3
SLD202U-3
M-221
SLD202V-3
M-248
M-221
LO-11)
diode Marking code v3
,diode Marking code v3
marking code diode V3
SLD202U
SLD202U-3
SLD202V-3
820 nm laser diode
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PDF
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1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a
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Original
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M3D891
1PS10SB63
OD882
MDB391
SCA75
613514/01/pp7
1PS10SB63
MARKING S4 diode schottky
MLE118
S4 DIODE schottky
Schottky barrier sot-23 Marking s4
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PDF
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BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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Original
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
|
PDF
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SLD201V-3
Abstract: diode Marking code v3 SLD201V3 ,diode Marking code v3 SLD201U-3
Text: SLD201U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD201U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD201U-3 M-221 SLD201V-3 M-248 Features High power laser diode with the excellent general
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Original
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SLD201U-3/V-3
SLD201U-3/V-3
SLD201U-3
M-221
SLD201V-3
M-248
M-221
LO-11)
SLD201V-3
diode Marking code v3
SLD201V3
,diode Marking code v3
SLD201U-3
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PDF
|
D3012B5
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW30G120C5B
D3012B5
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PDF
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hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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Original
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
|
PDF
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
|
PDF
|
|
|
BAP51-03
Abstract: SC-76 smd diode S4 BAP51 Series
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance
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Original
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BAP51-03
OD323
sym006
OD323)
SCA76
R77/04/pp7
BAP51-03
SC-76
smd diode S4
BAP51 Series
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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Original
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
|
PDF
|
SLD301V-1
Abstract: SLD301V SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3
Text: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW
|
Original
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SLD301V
100mW
SLD301V
M-248
LO-11)
SLD301V-1
SLD301V-2
SLD301V-21
SLD301V-24
SLD301V-25
SLD301V-3
|
PDF
|
248 830
Abstract: No abstract text available
Text: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW
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Original
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SLD301V
100mW
SLD301V
M-248
LO-11)
248 830
|
PDF
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S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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Original
|
M3D891
BAT54L
OD882
MDB391
SCA75
613514/01/pp8
S3 DIODE schottky
SOD882
S3 marking DIODE
BAT54L
Marking s3 Schottky barrier
Marking "s3" Schottky barrier
MARKING C SOD882
|
PDF
|
marking code k1
Abstract: BAP51-02 smd marking KM
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance
|
Original
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M3D319
BAP51-02
OD523
MAM405
OD523)
613514/02/pp8
marking code k1
BAP51-02
smd marking KM
|
PDF
|
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
|
OCR Scan
|
1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
|
PDF
|
SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
|
OCR Scan
|
BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
|
PDF
|
SVC333
Abstract: C25V Ne935-2 ACM 944 1096-11 c30 diode
Text: Ordering number : EN935B _ S VC 33 3 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode works at high tuning voltage and has the high Q and the sufficiently high capacitance ratio and
|
OCR Scan
|
EN935B
SVC333
Ne935-4/4
C25V
Ne935-2
ACM 944
1096-11
c30 diode
|
PDF
|
diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
|
OCR Scan
|
BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
|
PDF
|
