C 34 F
Abstract: 1SV274 D234
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV274
C25V/C28V
470MHz
C 34 F
1SV274
D234
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV245 UHF SHF T U N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATIN G S (Ta = 25°C)
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1SV245
C2V/C25V
10kS2)
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marking t6 VARIABLE CAPACITANCE DIODE
Abstract: 1SV211
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV211 CATV TUNING. • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Excellent C - V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV211
C2V/C25V
marking t6 VARIABLE CAPACITANCE DIODE
1SV211
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1SV186
Abstract: 1SV186 toshiba
Text: TO SHIBA 1SV186 Unit in mm Variable Capacitance Diode 1 . 5 - ili 5 Silicon Epitaxial Planar Type UHF SHF Tuning Features • High Capacitance Ratio : C 2V/C25V = 5.2 Typ. • Low Series Resistance : rs = 1 ,2Q (Typ.) • Excellent C-V Characteristics, and Small Tracking Error
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1SV186
V/C25V
1SV186
1SV186 toshiba
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1SV102
Abstract: No abstract text available
Text: TOSHIBA 1S V 102 TOSHIBA VARIABLE CAPACITANCE DIODE 1S SILICON EPITAXIAL PLANAR TYPE 102 V AM RADIO BAND TUNING APPLICATIONS. U nit in mm 4.3 MAX. • High Capacitance Ratio : C2V ¡ C25V = 23 Typ. • High Q : Q = 400 (Typ.) • Sm all Package. Q S5M AX.
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KDV262
Abstract: No abstract text available
Text: Diodes SMD Type Silicon Epitaxial Planar Diode KDV262 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio : C2V/C25V=12.5 Typ. Low Series Resistance : rs=0.6 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 Excellent C-V Characteristics, and Small Tracking Error.
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KDV262
OD-323
C2V/C25V
KDV262
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE 1SV217 CATV TUNING. Unit in mm . High Capacitance Ratio : C2V/C25V=12.5 Typ. . Excellent C-V Characteristics, and Small Tracking Error. . Useful for Small Size Tuner. 0.1 5 MAXIMUM RATINGS +0.1 - 0.06 (Ta=25°C) CHARACTERISTIC
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1SV217
C2V/C25V
10kil)
470MHz
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Untitled
Abstract: No abstract text available
Text: 1SV214 SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm . High Capacitance Ratio : €2V/C25V=6.5 Typ. . Low Series Resistance : rs=0. 4il(Typ.) . Excellent C-V Characteristics, and Small Tracking Error. . Useful for Small Size Tuner. 0 ± 0-0 5 I +0.1
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1SV214
V/C25V
C2V/C25V
470MHz
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1SV153
Abstract: No abstract text available
Text: 1SV153 SILICON EPITAXIAL PLANAR TYPE TV T U N I NG . U n i t in m m +Q25 1.5 -a i 5 FEATURES: . High Capacitance Ratio : C2V/C25V=6.5 Typ. . Low Series Resistance : r s = 0 . 4 5 H ( T y p .) . Excellent C-V Characteristics, and Small Tracking Error. . Useful
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1SV153
C2V/C25V
470MHz
1SV153
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1SV226
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE 1SV226 CATV TUNING. Unit in mm + 0.25 1.5-0.X 5 . High Capacitance Ratio : C2V/C25V=15 Typ. co ö . Excellent C-V Characteristics, and Small Tracki ng Error. . Useful for Small Size Tuner. 0.65 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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1SV226
C2V/C25V
70MHz
1SV226
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1SV186
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV186 UHF SHF T U N IN G FEATURES : • High Capacitance Ratio : C2V/C25V = 5.2 Typ. • Low Series Resistance : rs = 1.2ÎÎ (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.
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1SV186
C2V/C25V
C2V/C25V
470MHz
1SV186
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1SV214
Abstract: 1sv214 equivalent smd diode marking T1 10k VR capacitance diode marking T1 211na
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV214 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V=6.5 Typ. Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 Excellent C-V Characteristics,and Small Tracking Error.
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1SV214
OD-323
C2V/C25V
1SV214
1sv214 equivalent
smd diode marking T1
10k VR
capacitance diode marking T1
211na
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1SV283B
Abstract: C25V
Text: 1SV283B 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV283B ○ CATV チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C2V/C25V = 11.5 標準 • 直列抵抗が小さい。 : rs = 0.55 Ω (標準)
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1SV283B
C2V/C25V
1SV283B
C25V
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Untitled
Abstract: No abstract text available
Text: Product specification 1SV269 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 11.5 Typ. Low Series Resistance:rs = 0.55 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Excellent C-V Characteristics,and Small Tracking Error.
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1SV269
OD-323
C2V/C25V
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Untitled
Abstract: No abstract text available
Text: Product specification 1SV214 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V=6.5 Typ. Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 Excellent C-V Characteristics,and Small Tracking Error.
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1SV214
OD-323
C2V/C25V
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Untitled
Abstract: No abstract text available
Text: 1SV214 TO SHIBA 1 SV2 1 4 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 6.5 Typ. Low Series Resistance : rs = 0.4(1 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV214
C2V/C25V
ij------X100
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1SV245
Abstract: C25V
Text: 1SV245 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.
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1SV245
C2V/C25V
1SV245
C25V
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1SV282
Abstract: C25V
Text: TO SH IBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 2 CATV TUNING • Unit in mm High Capacitance Ratio : C2V/C25V = 12.5 TYP. 0.6 ± 0.1 ÍN O • Low Series Resistance : rs = 0 .6 0 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV282
C2V/C25V
0014g
1SV282
C25V
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toshiba SO 41
Abstract: 1SV290 C25V
Text: 1SV290 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV290 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV290
C2V/C25V
0014g
toshiba SO 41
1SV290
C25V
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Untitled
Abstract: No abstract text available
Text: 1SV232 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE 1 S V2 3 2 • High Capacitance Ratio : C2V / C25V = 10.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner. Unit in mm
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1SV232
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sv309
Abstract: 5020E
Text: 1SV309 TO SH IBA 1 SV3 0 9 TOSHIBA DIODE UHF SHF TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C-V Characteristics, and Small Tracking Error Useful for Small Size Tuner
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1SV309
C2V/C25V
sv309
5020E
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C25V
Abstract: KDV262 TA5 marking
Text: SEMICONDUCTOR TECHNICAL DATA KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. L K H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.6 Typ. 1 E High Capacitance Ratio : C2V/C25V=12.5(Typ.)
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KDV262
C2V/C25V
1000p
470MHz
C25V
KDV262
TA5 marking
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C25V
Abstract: KDV215
Text: SEMICONDUCTOR KDV215 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K A Low Series Resistance : rS=0.4 Typ. 1 E High Capacitance Ratio : C2V/C25V=6.5(Typ.) G B CATHODE MARK FEATURES H F Excellent C-V Characteristics, and Small Tracking Error.
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KDV215
C2V/C25V
470MHz
C25V
KDV215
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1SV283
Abstract: C25V
Text: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2y/C25V
0014g
000707EAA2'
1SV283
C25V
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