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    Toshiba America Electronic Components 1SV283(TPH3,F)

    1SV283 - Variable Capacitance Diode Silicon Epitaxial Planar Type
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 1SV283(TPH3,F) 176,000 1
    • 1 $0.0694
    • 10 $0.0694
    • 100 $0.0652
    • 1000 $0.059
    • 10000 $0.059
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    1SV283 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV283 Toshiba variable capacitance diode Original PDF
    1SV283 Toshiba Variable capacitance silicon diode for CATV tuning Scan PDF
    1SV283 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan PDF
    1SV283 Toshiba DIODE VAR CAP SINGLE 34V 29PF 2(1-1G1A) Scan PDF
    1SV283B Toshiba CATV Tuning Original PDF
    1SV283(TH3,F,T) Toshiba 1SV283 - DIODE VARACTOR 34V 1-1G1A Original PDF
    1SV283TH3T Toshiba 1SV283TH3T - Diode VAR Cap Single 34V 29pF 2-Pin ESC Original PDF
    1SV283TPH3 Toshiba 1SV283TPH3 - Diode VAR Cap Single 34V 29pF 2-Pin ESC T/R Original PDF
    1SV283(TPH3) Toshiba DIODE VAR CAP SINGLE 34V 29PF 2(1-1G1A) T/R Scan PDF
    1SV283(TPH3,F) Toshiba 1SV283 - Diode VAR Cap Single 34V 29pF 2-Pin ESC T/R Original PDF

    1SV283 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SV283B

    Abstract: C25V
    Text: 1SV283B 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV283B ○ CATV チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C2V/C25V = 11.5 標準 • 直列抵抗が小さい。 : rs = 0.55 Ω (標準)


    Original     		PDF 1SV283B C2V/C25V 1SV283B C25V

    Untitled

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV283

    DIODE C25

    Abstract: C25 diode
    Text: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error


    Original     		PDF 1SV283B DIODE C25 C25 diode

    Untitled

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV283

    1SV283

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV283 1SV283

    1SV283

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV283 1SV283

    1SV283

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV283 1SV283

    847e

    Abstract: 1SV283
    Text: 20010110 1SV283 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 2V ～ 25V Ta = 27℃


    Original     		PDF 1SV283 685E-15 00E-06 847E-11 00E-10 847e

    1SV283B

    Abstract: No abstract text available
    Text: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B Unit: mm CATV Tuning • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error


    Original     		PDF 1SV283B 1SV283B

    1SV283B

    Abstract: No abstract text available
    Text: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error


    Original     		PDF 1SV283B 1SV283B

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 3 Unit in mm High Capacitance Ratio : C2 v / C 2 5 V = H -5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 0014g

    1SV283

    Abstract: C25V
    Text: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 C2y/C25V 0014g 000707EAA2' 1SV283 C25V

    27c diode toshiba

    Abstract: 1SV283 847E C25V 6685E
    Text: 1SV283 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 283 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 C2y/C25V 0014g 27c diode toshiba 1SV283 847E C25V 6685E

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 CATV TUNING U nit in mm • High Capacitance Ratio : C 2V /C 25V —H-5 TYP. • Low Series Resistance • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner,


    OCR Scan     		PDF 1SV283 0014g

    Untitled

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 C2V/C25V 0014g

    1SV283

    Abstract: C25V
    Text: TOSHIBA 1SV283 1 SV2 8 3 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 11.5 TYP. Low Series Resistance : rs = 0.550 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 C2y/C25V 0014g 470MHz C25V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 283 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2v/C25V = H-5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 C2v/C25V 0014g

    Untitled

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV 283 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 11.5 TYP. Low Series Resistance : rs = 0.550 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV283 C2V/C25V 0014g