Untitled
Abstract: No abstract text available
Text: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM70CT1G
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Untitled
Abstract: No abstract text available
Text: APTC60DSKM70CT1G Dual buck chopper Super Junction MOSFET SiC chopper diode VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Features SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM70CT1G
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schottky 400v
Abstract: APT0406 APT0502
Text: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM70CT1G
schottky 400v
APT0406
APT0502
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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G60N60
Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2
Text: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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IXGR60N60C2C1
IC110
IF110
60N60C2C1
2-17-08-A
G60N60
G60N
IF110
ISOPLUS247
C9045
IXGR60N60C2C1
g60n60c2
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APT0406
Abstract: APT0502
Text: APTC60DDAM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual boost chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • •
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APTC60DDAM70CT1G
APT0406
APT0502
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Untitled
Abstract: No abstract text available
Text: APTC60DDAM70CT1G Dual boost chopper Super Junction MOSFET SiC chopper diode VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features
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APTC60DDAM70CT1G
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Untitled
Abstract: No abstract text available
Text: APTC60DDAM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual boost chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • •
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APTC60DDAM70CT1G
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DIODE 4d
Abstract: No abstract text available
Text: SKiiP 39AHB16V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Chopper , $0 9 ,$0 . ' / -
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39AHB16V1
DIODE 4d
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Untitled
Abstract: No abstract text available
Text: SKiiP 39ANB16V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; (Z Diode - Inverter, Chopper MiniSKiiP 3 (& M GF TUQV N; .$ .$1X (Z 3-phase bridge rectifier +
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39ANB16V1
39ANB16V1
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Diode 6a8
Abstract: 6A8 RECTIFIER DIODE F 407 Diode
Text: SKiiP 39AC126V2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter , $3 : ,$3 1 ' 2 0
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39AC126V2
Diode 6a8
6A8 RECTIFIER DIODE
F 407 Diode
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diode B7
Abstract: diode 4g 39ANB16V1
Text: SKiiP 39ANB16V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , $0 9 ,$0 . ' / -
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39ANB16V1
diode B7
diode 4g
39ANB16V1
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G60N60
Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2
Text: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGR60N60C2C1
IC110
247TM
IF110
60N60C2C1
2-17-08-A
G60N60
60N60C2
IF110
ISOPLUS247
g60n60c2c1
IXGR60N60C2C1
siemens sic
g60n60c2
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Untitled
Abstract: No abstract text available
Text: SKiiP 39AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; '@ Y P S& ([ Diode - Chopper MiniSKiiP 3 (& M GF TUQV N; '@ Y P S& .$ .$1X ([ 3-phase bridge rectifier + brake chopper
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39AHB16V1
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Untitled
Abstract: No abstract text available
Text: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGR60N60C2C1
IC110
247TM
IF110
60N60C2C1
2-17-08-A
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Untitled
Abstract: No abstract text available
Text: SKiiP 39AC065V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter L<DT .< .<1Z L/DT -* R HG S<P 45%7* 2&97'8:*7 *B7?: :76 -* R HG VWJX S< &B [ N M* -] Diode - Inverter MiniSKiiP 3 .Q .Q1Z -* R HG VWJX S< &B [ N M* -] 3-phase bridge inverter SKiiP 39AC065V2
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39AC065V2
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7819
Abstract: No abstract text available
Text: SKiiP 39AC065V2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter - %5 ; -%5 3 4 1 #
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39AC065V2
7819
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients
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AEC-Q101
JESD201A
EC-61000-4-2
DO-214AA
12mm/13â
RS-481
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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33A zener diode
Abstract: zener diode 46a
Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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SMA4728A
SMA4764A
1-Jul-2004
DO-214AC
33A zener diode
zener diode 46a
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SCS110AG
Abstract: scs110
Text: TYPE PRODUCTS TO-220AC 2L PAGE SCS110AG 1.TYPE SCS110AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK
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O-220AC
SCS110AG
SCS110AG
125oC,
150oC
55150oC
scs110
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IRG4PC50FD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20
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IRG4PC50FD
O-247AC
IRG4PC50FD
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Untitled
Abstract: No abstract text available
Text: PD 9.1469A International ICR Rectifier IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC50FD
O-247AC
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g4pc50fd
Abstract: g4pc50 g4pc50f g4p-c50 g4pc IRG4PC50FD IRG4PC50F
Text: International IGR Rectifier PD 9.1469A IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC50FD
O-247AC
g4pc50fd,
g4pc50fd
g4pc50
g4pc50f
g4p-c50
g4pc
IRG4PC50FD
IRG4PC50F
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