TSC5304D
Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Text: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5304D
TSC5304DCH
O-251
TSC5304DCP
O-252
oth022
O-251
TS5304D
TSC5304D
power transistor Ic 4A NPN to - 251
TSC5304DCH
TSC5304DCP
TS530
NPN Transistor 10A 400V
TSC5304
ic 565 pin diagram
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marking c08
Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
marking c08
C08 marking
250V transistor npn 2a
BM 0228
marking code C5
power transistor Ic 4A NPN to - 251
1A MARKING CODE
C5 MARKING TRANSISTOR
marking code B2
NPN Silicon Power Transistor DPAK
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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TP 1078
Abstract: transistor 926
Text: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC128D
O-220
O-263
TSC128DCZ
TSC128DCM
O-263
50pcs
800pcs
TP 1078
transistor 926
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Untitled
Abstract: No abstract text available
Text: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT4SC60K APT4SC60SA 600V 600V 4A 4A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly
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O-220
APT4SC60K
APT4SC60SA
O-220
O-263
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pin diagram of ic 4440
Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
Text: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5305D
O-263
TSC5305DCZ
O-220
TSC5305DCM
O-220
O-263
TS5305D
pin diagram of ic 4440
IC 0116 DC
TSC5305D
TSC5305DCM
TSC5305DCZ
ic 4440
transistor Vceo 400V, Vebo 9v, Ic 10A
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tyco igbt 6a
Abstract: No abstract text available
Text: Targetdatasheet flow PIM 0+P, 600V, 4A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom
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D81359
tyco igbt 6a
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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TSC5304ED
Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304ED
power transistor Ic 4A NPN to - 251
TSC5304EDCP
transistor c10
TO-252 marking C10
marking C10
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ILA03N60
Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Text: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILB03N60
P-TO-263-3-2
O-263AB)
Q67040-S4627
ILA03N60
ILB03N60
Q67040-S4627
SDP04S60
Infineon MOSFET 1000V
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ILA03N60
Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILB03N60,
ILD03N60
P-TO-220-3-1
O-220AB)
ILA03N60
ILB03N60
ILA03N60
ILB03N60
ILD03N60
ILP03N60
Q67040-S4626
Q67040-S4628
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Q67040-S4628
Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILB03N60,
ILD03N60
P-TO-220-3-1
O-220AB)
ILA03N60
ILB03N60
Q67040-S4628
ic 5304 1a
Q67040-S4626
ILA03N60
ILB03N60
ILD03N60
ILP03N60
IC 4043 configuration
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L03N60
Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
Text: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILD03N60
PG-TO-220-3-31
O-220
PG-TO-220-3-1
O-220AB)
PG-TO-252-3-1
O-252AA)
ILA03N60
L03N60
PG-TO220-3-31
TRANSISTOR SMD MARKING CODE 1v
mj 4043
Infineon MOSFET 1000V
MS 25231 LAMP
RG80
PG-TO-220-3-31
PG-TO25
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STTH806DTI
Abstract: No abstract text available
Text: STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Insulated TO-220AB ESPECIALLY SUITED AS BOOST DIODE IN
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STTH806DTI
O-220AB
2500VRMS)
STTH806DTI
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JESD97
Abstract: STTH806DTI
Text: STTH806DTI Tandem 600 V hyperfast boost diode Table 1. Main product characteristics IF AV 8A VRRM 600 V Tj (max) 150° C VF (max) 2.24 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 Insulated TO-220AC Features and benefits • Especially suited as boost diode in continuous
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STTH806DTI
O-220AC
JESD97
STTH806DTI
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Untitled
Abstract: No abstract text available
Text: STTH806DTI Tandem 600 V hyperfast boost diode Table 1. Main product characteristics IF AV 8A VRRM 600 V Tj (max) 150° C VF (max) 2.24 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 Insulated TO-220AC Features and benefits • Especially suited as boost diode in continuous
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STTH806DTI
O-220AC
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CSD04060
Abstract: CSD04060A SCHOTTKY 4A 600V CSD04060B CSD04060E
Text: CSD04060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=4A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD04060
CSD04060A
CSD04060B
CSD04060E
CSD04060,
CSD04060
CSD04060A
SCHOTTKY 4A 600V
CSD04060E
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STTH806DTI
Abstract: No abstract text available
Text: STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 600 V Tj 150°C VF (typ) 2.24 V IRM typ.) 4A trr (max) 13 ns 1 2 1 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Especially suited as boost diode in continuous mode power factor correctors and hard
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STTH806DTI
2500VRMS)
STTH806DTI
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Untitled
Abstract: No abstract text available
Text: CSD04060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 4A Qc = 9 Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD04060â
O-252-2
O-220-2
CSD04060
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STTH806TTI
Abstract: No abstract text available
Text: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 • ■ ■ ■ ■ 3 Insulated TO-220AB FEATURES AND BENEFITS ■ 2 ESPECIALLY SUITED AS BOOST DIODE IN
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STTH806TTI
O-220AB
STTH806TTI
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Untitled
Abstract: No abstract text available
Text: n - n x V 'C X -Y - Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D4L40 400V 4A • t r r 50ns m m •SRSÎÜ •75-rjn -f-ju •^ B s O A .P ,^ • i l i â s FA RATINGS Absolute Maximum Ratings a i 5 E-fSymbol Conditions a Item Storage Temperature
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D4L40
75-rjn
50HziE5g
50HzjE
J515-5
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode UHM' vi& E l OUTLINE DIMENSIONS D4L40 Case : ITO-220 ' 400V 4A •ffiy -r x # trr5 0 n s 0.7 •S R C Ü • 7U • * « . OA, p.?« •an. a « , fa • Ê të ft RATINGS A bsolute M ax im u m Ratings m S ym bol m & tft
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D4L40
ITO-220
SHINDENGEN DIODE
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D4L40
Abstract: No abstract text available
Text: □ — n ^ S T -T * — K m tm . Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D4L40 400V 4A • fctem R A T IN G S Absolute Maximum Ratings s m Item Symbol un&m it- ~-— O perating J u n c tio n Tem perature Maximum Reverse Voltage
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D4L40
D4L40
50HzIE3£
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