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    DIODE 5MM Search Results

    DIODE 5MM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 5MM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ultra low forward voltage schottky diode

    Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
    Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


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    5V/10A) ultra low forward voltage schottky diode diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 PDF

    infrared receiver led

    Abstract: infrared 5mm 940nm GaAs Infrared photodiode Infrared Phototransistor NTE3027 Infrared Emitting Diode infrared led receiver diode 5v
    Text: NTE3027 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3027 Infrared Emitting Diode is a high intensity diode using AlGaAs/GaAs technology molded in a blue transparent plastic standard T-1 3/4 5mm package. This device is spectrally matched for use


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    NTE3027 NTE3027 940nm 100mA, infrared receiver led infrared 5mm 940nm GaAs Infrared photodiode Infrared Phototransistor Infrared Emitting Diode infrared led receiver diode 5v PDF

    Untitled

    Abstract: No abstract text available
    Text: R9XSMD0475XX WELDING DIODE ELEMENT Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com 7450 Amperes 400 Volts 3.6mm 1.2mm Deep 5mm RTV Sealant 49.2mm Cathode Contact Anode Contact 56mm Powerex General Purpose Rectifier Diode


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    R9XSMD0475XX PDF

    500a diode

    Abstract: diode 500A INDUCTION HEATING POWER SUPPLY k1 522 APTDF500U20
    Text: APTDF500U20 Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles


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    APTDF500U20 500a diode diode 500A INDUCTION HEATING POWER SUPPLY k1 522 APTDF500U20 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTDF500U20G Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles


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    APTDF500U20G 50/60Hz PDF

    APT0502

    Abstract: APTDF500U20G
    Text: APTDF500U20G Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles


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    APTDF500U20G APT0502 APTDF500U20G PDF

    Untitled

    Abstract: No abstract text available
    Text: R9XSMD0475XX WELDING DIODE ELEMENT Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com 7450 Amperes 400 Volts Φ 3.6mm 1.2mm Deep 5mm RTV Sealant 49.2mm Cathode Contact Anode Contact 56mm Powerex General Purpose Rectifier Diode


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    R9XSMD0475XX INFORMATIO12000 PDF

    h30r1602

    Abstract: IHY30N160R2 h30r160 PG-TO247HC-3
    Text: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers:


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    IHY30N160R2 O-247HC h30r1602 IHY30N160R2 h30r160 PG-TO247HC-3 PDF

    IC 386

    Abstract: NTE3030 light emitting diode LED 5mm LIGHT EMITTING DIODE datasheet light emitting diode flashing red LED diode 226 light emitting diode
    Text: NTE3030 Light Emitting Diode LED Diffused Red, Blinking Description: The NTE3030 is a flashing red Light Emitting Diode (LED) with Integral IC in a T−1 3/4 5mm plastic type package. Typical applications include warning lights and status indicators. Features:


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    NTE3030 NTE3030 660nm IC 386 light emitting diode LED 5mm LIGHT EMITTING DIODE datasheet light emitting diode flashing red LED diode 226 light emitting diode PDF

    5mm LIGHT EMITTING DIODE

    Abstract: NTE3169 NTE3171 datasheet light emitting diode NHTE3170 NTE3170 NTE316
    Text: NTE3169, NHTE3170, NTE3171 Square Light Emitting Diode − 5mm Description: The NTE3169 Bright Red source color is made with Gallium Phosphide on a Gallium Phosphide Red Light Emitting Diode. The NTE3170 (Green) is made with Gallium Phosphide on a Gallium Phosphide


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    NTE3169, NHTE3170, NTE3171 NTE3169 NTE3170 5mm LIGHT EMITTING DIODE NTE3169 NTE3171 datasheet light emitting diode NHTE3170 NTE3170 NTE316 PDF

    NTE3030

    Abstract: light emitting diode LED diode led
    Text: NTE3030 Light Emitting Diode LED Diffused Red, Blinking Description: The NTE3030 is a flashing red Light Emitting Diode (LED) with Integral IC in a T−1 3/4 5mm plastic type package. Typical applications include warning lights and status indicators. Features:


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    NTE3030 NTE3030 V-10V 100mW light emitting diode LED diode led PDF

    H15R1202

    Abstract: IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3-21 600v 20a diode H15R1202 equivalent
    Text: IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


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    IHW15N120R2 PG-TO-247-3-21 PG-TO247-3-21 180nH H15R1202 IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3-21 600v 20a diode H15R1202 equivalent PDF

    H20R1202

    Abstract: h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R IHW20N120R2 H20R120 H20R12 igbt 1200V 60A
    Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    IHW20N120R2 IHW20N120R2 H20R1202 h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R H20R120 H20R12 igbt 1200V 60A PDF

    H20R120

    Abstract: igbt h20r120 h20r H20R12 h20r120 igbt IHW20N120R ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A
    Text: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    IHW20N120R IHW20N120R H20R120 igbt h20r120 h20r H20R12 h20r120 igbt ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A PDF

    H25R1202

    Abstract: IHW25N120R2 IGBT 600V 40A IGBT 1000V .50A IGBT H25R1202 PG-TO-247-3-21 IGBT 600V 40A diode H25R120
    Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


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    IHW25N120R2 PG-TO-247-3-21 H25R1202 IHW25N120R2 IGBT 600V 40A IGBT 1000V .50A IGBT H25R1202 PG-TO-247-3-21 IGBT 600V 40A diode H25R120 PDF

    h30r1202

    Abstract: h30r120 H30R1202 equivalent igbt h30r1202 "h30r1202" IHW30N120R2 H30R1 H30R
    Text: IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    IHW30N120R2 IHW30N120R2 h30r1202 h30r120 H30R1202 equivalent igbt h30r1202 "h30r1202" H30R1 H30R PDF

    H25R1202

    Abstract: IGBT H25R1202 H25R120 IHW25N120R2 H25R12
    Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


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    IHW25N120R2 IHW25N120R2 H25R1202 IGBT H25R1202 H25R120 H25R12 PDF

    H20R120

    Abstract: h20r120 igbt 20A 500v igbt
    Text: IHW20N120R Soft Switching Series ^ Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


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    IHW20N120R IHW20N120R H20R120 h20r120 igbt 20A 500v igbt PDF

    n004

    Abstract: MIB57T-K ML303
    Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.


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    MIB57T-K ML303. 10/iiS, 100mA 100mA 150mW n004 ML303 PDF

    MIB57T-K

    Abstract: ML303
    Text: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7


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    MEB57T-K MIB57T-K B57T-K ML303. 100mA 150mW ML303 PDF

    MIB57T-K

    Abstract: ML303
    Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.


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    MIB57T-K ML303. 10/Lts, 100mA 4351G 100mA 150mW ML303 PDF

    11851

    Abstract: MIB51T
    Text: CRO MIB51T INFRARED EM ITTING DIODE 04.98 0.196 DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 - 2.54(0.1) ABSOLUTE MAXIMUM RATINGS • • • Forward Current (Continuous)


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    MIB51T MIB51T 100mA 160mW 11851 PDF

    MI51TA

    Abstract: MIB51TA
    Text: MI51TA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS


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    MIB51TA MI51TA MIB51JA 100mA 180mW MI51TA PDF

    MI51TA

    Abstract: MIB51TA em4070
    Text: DESCRIPTION CRO MI51TA MIB51TA INFRARED EMITTING DIODE MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS


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    MI51TA MIB51TA MIB51TA MI51TA em4070 PDF