JANTX1N6776
Abstract: 1N6774 1N6775 1N6776 1N6777 JAN1N6774 JANTX1N6774
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 February 2008. INCH-POUND MIL-PRF-19500/646E 26 November 2008 SUPERSEDING MIL-PRF-19500/646 D 25 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/646E
MIL-PRF-19500/646
1N6774
1N6777,
MIL-PRF-19500.
JANTX1N6776
1N6775
1N6776
1N6777
JAN1N6774
JANTX1N6774
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50t65
Abstract: bd650 BD644
Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.
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BD644;
BD650;
O-220
BD643,
BD645,
BD647,
BD651.
BD644
50t65
bd650
BD644
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status P ro d u ct s p e c ific a tio n date of issue April 1991 BDS644/646/648/650/652 PNP silicon Darlington power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m onolithic Darlington circu it in a
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BDS644/646/648/650/652
OT223)
BDS643/645/647/649/651.
BDS644
BDS646
BDS648
BDS650
BDS652
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D 1991 AR
Abstract: lg bd645 transistor d 1991 ar BD644 philips BD650 BD643 B0645 BD644 B0643 BD649 philips
Text: BD644; 646; 648 _ jj^ BD650; 652 PHILIPS INTERNATIONAL SbE D • 711GÛ2b 7b7 M P H I N 'V - 3 3 - 3 SILICON DARLINGTON POWER TRANSISTORS PN P epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TCJ-220
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BD644;
BD650
T-33-3Ã
TCJ-220
BD643,
BD645,
BD647,
BD649
BD651.
BD644
D 1991 AR
lg bd645
transistor d 1991 ar
BD644 philips
BD643
B0645
B0643
BD649 philips
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Untitled
Abstract: No abstract text available
Text: fl535bOS 0 0 ^ 3 0 SIEMENS 3G7 • _PROFET Target Data Sheet BTS 550 P Smart Highside High Current Power Switch Features Product Summary Overvoltage protection Operating voltage 63 Vbb AZ On-state resistance Load current (ISO) Short circuit current limitation
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fl535bOS
sense3146
Q67060-tbd-tbd
O-218AB/5
E3146
A235b05
DG12141
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Untitled
Abstract: No abstract text available
Text: LJ r iU UH7yl I—J ^ 4 r l L i ’D “7 / |_ | Z1' C A / H h l l O O H D j r i l J f S ix c o n tro l in p u ts enable th is device to be used as a latch ed | transceiver, u n la tc h e d tra nsceiver, o r a c o m b in a tio n o f b o th . As a latch ed tra nsceiver, data fro m on e bus is stored f o r la te r
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D 1991 AR
Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645
Text: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.
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OCR Scan
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BD644;
BD650;
T0-220
BD643,
BD645,
BD647,
BD649
BD651.
BD644
D 1991 AR
transistor 648
transistor bd650
transistor bd644
b0651
BD65
BD651
lms-21
BD645
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Untitled
Abstract: No abstract text available
Text: e Q S 54/74F C T 646 Q S 54/74F C T 648 High Speed CMOS 8-bit Bus Interface Register Transceivers FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static • Available in PDIP, ZIP, SOIC, QSOP, CERDIP
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54/74F
74F646/8
74FCT646/8
74FCT646T/8T
lol-12m
QSFCT646/8,
QSFCT2646/8
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FCT2000
Abstract: C1213 5A2R
Text: QUALITY SEMICONDUCTOR Q S 54/74F C T 646 Q S54/74FCTG 48 High Speed CMOS 8-bit Bus Interface Register Transceivers Q INC, qI m /mfctm JS FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static
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QS54/74FCT646
qs54/74fct64b
74F646/8
74FCT646/8
74FCT646T/8T
MIL-STD-883
QSFCT646/8,
QSFCT2646/8
FCT2000
C1213
5A2R
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linfinity
Abstract: SM600 SM645 SM645K SM646 pic 645
Text: SM645/SM646/SM647 SWITCHING REGULATOR POWER OUTPUT STAGES DESCRIPTION FEATURES The SM645/646/647 series of Power Output Stages are especially designed to be driven with standard PWM integrated circuits to form an efficient switching power supply. The SM645,
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SM645/SM646/SM647
SM645/646/647
SM645,
SM646
SM647
SM645K
SM645HRK
SM646K
SM646HRK
linfinity
SM600
SM645
SM645K
pic 645
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D 1991 AR
Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0
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BD644;
BD650
711002b
BD643,
BD645,
BD647,
BD651.
BD644
BD650;
D 1991 AR
BD852
transistor d 1991 ar
TRansistor 648
DIODE 646 on
651 diode
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BD 650
Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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smd npn darlington
Abstract: smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134
Text: Philips Components Data sheet status Product specification date of issue April 1991 BDS644/646/648/650/652 PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PNP Silicon epitaxial base transistors in a monolithic Darlington circuit in a
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BDS644/646/648/650/652
OT223)
BDS643/645/647/649/651.
BDS644
BDS646
BDS648
BDS650
BDS652
smd npn darlington
smd .652
BDS644
BDS646
BDS648
BDS650
BDS652
IEC134
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652 smd
Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
Text: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N
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711002b
bds644/646/648/650/652
OT223)
BDS643/645/647/649/651.
BDS644
BDS646
BDS648
BDS650
BDS652
652 smd
IR P 648 H
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74HCTLS
Abstract: Zytrex
Text: Zytrex B G W K nS F ebrua ry 1985 646 ZX74HCTLS 648 Octal 3-State Bus Transceivers with Registers OBJECTIVE SPECIFICATIONS Features Description • 8 bi-directional data paths The ’646 and '648 are bi-directional bus transceivers with D-type flip-flops and control circuitry to facilitate high
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ZX54HCTLS
ZX74HCTLS
24-pin
54/74LS
74HCTLS:
54HCTLS:
74HCTLS
Zytrex
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Untitled
Abstract: No abstract text available
Text: QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers Q Q S54/74FC T646T qs54/74fct648t S ssJ^Fci^si FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static
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QSFCT646T,
2646T,
2648T
S54/74FC
T646T
qs54/74fct648t
74F646/8
74FCT646/8
74FCT646T/8T
MIL-STD-883
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6206a
Abstract: mcc501 MDK630
Text: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for
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150A113Â
ISO9001Â
6206a
mcc501
MDK630
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Untitled
Abstract: No abstract text available
Text: QSFCT646T, 648T, 2646T, 2648T Ô High Speed CMOS 8-bit Bus Interface Register Transceivers Q S54/74FC T646T Q S54/74FC T648T Q S54/74FC T2646T Q S54/74FC T2648T FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static
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QSFCT646T,
2646T,
2648T
S54/74FC
T646T
T648T
T2646T
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2646D
Abstract: No abstract text available
Text: QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers ö Q S 54/74FC T646T Q S54/74FC T648T / ncciI71CPT, CiCT FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static
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QSFCT646T,
2646T,
2648T
54/74FC
T646T
S54/74FC
T648T
ncciI71CPT,
74F646/8
74FCT646/8
2646D
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Untitled
Abstract: No abstract text available
Text: flUALTTY S E M I C O N D U C T O R INC 41E D • 7Mbfcifl03 O O O Q T O b T B 2 S I QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers Q T -5 % -3 D -D % QS54/74FCT646T QS54/74FCT648T QS54/74FCT2646T QS54/74FCT2648T FEATURES/BENEFITS
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7Mbfcifl03
QSFCT646T,
2646T,
2648T
QS54/74FCT646T
QS54/74FCT648T
QS54/74FCT2646T
QS54/74FCT2648T
74F646/8
74FCT646/8
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2646D
Abstract: QS32383 QS3383
Text: QSFCT646T, 648T, 2646T, 2648T QS54/74FCT646T QS3383 QS54/74FCT648T QS32383 QS54/74FCT2646T QS54/74FCT2648T* High Speed CMOS High Speed CMOS 8-BitBus BusExchange Interface RegisterSwitches Tranceivers Q FEATURES/BENEFITS • Pin and function compatible to the 74F646/8
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QSFCT646T,
2646T,
2648T
QS54/74FCT646T
QS3383
QS54/74FCT648T
QS32383
QS54/74FCT2646T
QS54/74FCT2648T*
74F646/8
2646D
QS32383
QS3383
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2648A
Abstract: No abstract text available
Text: QSFCT646T, 648T, 2646T, 2648T Q High Speed CMOS 8-bit Bus Interface Register Transceivers Q S54/74FC T646T Q S54/74FC T648T Q S54/74FC T2646T Q S54/74FC T2648T FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static
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QSFCT646T,
2646T,
2648T
S54/74FC
T646T
T648T
T2646T
2648A
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Untitled
Abstract: No abstract text available
Text: W lÆ ▼i V ^ /* /W Product Features: |j í 7 /I ^ • PI74FCT646T/648T/6 51T/652T/2646T/2652T is pin compatible with bipolar FAST Series at a higher speed and lower power consumption • 250 series resistor on all outputs FCT2XXX only • TTL input and output levels
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PI74FCT646T/648T/6
51T/652T/2646T/2652T
24-pin
PI74F
CT646T/648T/651T/652T
PI74FCT2646T/2652T
500ft
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on 648
Abstract: No abstract text available
Text: QSFCT646T, 648T, 2646T, 2648T Q H g h . .y i. 8 - B R it S p e e d B u s e g is t e r C M O S q s 5 4 /7 4 646 t 2646 t f c t QS54/74FCT648T I n t e r f a c e T r a n c e iv e r s q s s 3 4 /7 4 f c t QS54/74FCT2648T* FEATURES/BENEFITS • Pin and function compatible to the 74F646/8
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QSFCT646T,
2646T,
2648T
QS54/74FCT648T
74F646/8
74FCT646/8
74FCT646T/8T
QS54/74FCT2648T*
MDSL-00024-02
on 648
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