Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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semikron skiip 942
Abstract: No abstract text available
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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diode 648
Abstract: 1N4150 648 diode DIODE WITH SOD CASE
Text: L L 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the DO-35 case with the type designation 1N4150. Mechanical Data Case: MiniMELF Glass Case SOD-80
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DO-35
1N4150.
OD-80)
200mA
200mA,
diode 648
1N4150
648 diode
DIODE WITH SOD CASE
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Skiip 942 gb 120 317 ctv f
Abstract: ctv circuit semikron skiip 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942 skiip 942 gb 120 317 skiip gd 120 skiip gb 120 IC-900A skiip 942 GD 120 317 CTV SKIIP CASE 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
Skiip 942 gb 120 317 ctv f
semikron skiip 942
skiip 942 gb 120 317
skiip gd 120
skiip gb 120
IC-900A
skiip 942 GD 120 317 CTV
SKIIP CASE 942
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792gb170
Abstract: UDC 1700
Text: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
792gb170
UDC 1700
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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laser diode 635nm
Abstract: laser diode 635 nm SLD-635-P10-01
Text: SLD-635-P10-01 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P10-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter
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SLD-635-P10-01
635nm
laser diode 635nm
laser diode 635 nm
SLD-635-P10-01
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SLD-635-P5-02
Abstract: No abstract text available
Text: SLD-635-P5-02 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P5-02 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter Po
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SLD-635-P5-02
635nm
SLD-635-P5-02
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str 6707
Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
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M3D177
BAT254
BAT254
OD110
MAM214
OD110)
SCDS48
117021/1100/01/pp8
str 6707
BP317
Diode smd code 805
SMD 2211
smd schottky diode marking 72
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DL-3147-021
Abstract: No abstract text available
Text: Ordering number : EN5861A DL-3147-021 Red Laser Diode DL-3147-021 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current is achieved by a strained
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EN5861A
DL-3147-021
DL-3147-021
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5864A DL-3147-161 -261 Red Laser Diode DL-3147-161(-261) Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-161(-261) is index guided 650 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low
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EN5864A
DL-3147-161
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TE 2161
Abstract: DL-3147-161
Text: Ordering number : EN5864A DL-3147-161 -261 Red Laser Diode DL-3147-161(-261) Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-161(-261) is index guided 650 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low
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EN5864A
DL-3147-161
TE 2161
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DIODE B74
Abstract: No abstract text available
Text: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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IGBT 1500
Abstract: M2 DIODE UDC 1700
Text: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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792gb170
Abstract: semikron skiip 30 SemiSel 792GB170-373CTV
Text: SKiiP 792GB170-373CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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792GB170-373CTV
792gb170
semikron skiip 30
SemiSel
792GB170-373CTV
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942GB120-317CTV
Abstract: SKIIP APPLICATION 942GB120-317 ic sk 083
Text: SKiiP 942GB120-317CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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942GB120-317CTV
942GB120-317CTV
SKIIP APPLICATION
942GB120-317
ic sk 083
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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DL-3147-161
Abstract: No abstract text available
Text: Ordering number : EN5864 Red Laser Diode DL-3147-161 -261 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3147-161(-261) is index guided 650 nm (Typ.) AIGalnP laser diode with low threshold current and high operating temperature. The low
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EN5864
DL-3147-161
DL-3147-161
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m867
Abstract: ntc m867
Text: SFH 482201 SIEMENS G aA lA s-LA S ER DIODE 250 mW Package Dimensions in mm 1. 2. 3 4. Peltier-Cooler + NTC NTC Laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode Peltier-Cooler (-) FEATURES Maximum Ratings * Quantum-W ell Structure Manufactured
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00Q7MSb
m867
ntc m867
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P 131 GB
Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Text: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode
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315CTV713)
B7-40
P 131 GB
skiip 632 gb 120
315CTV713
skiip gb 120
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