8057 microcontroller
Abstract: adc 8038 30617 76075 Block Diagram of 8057 ad2870
Text: PRELIMINARY TECHNICAL DATA 3.3V, DUAL LOOP, 50Mbps to 3.3Gbps LASER DIODE DRIVER a ADN2870 Preliminary Technical Data FEATURES GENERAL DESCRIPTION Microcontroller Interface SFP and SFF MSA compliant 50Mbps to 3.3 Gbps operation Typical rise/fall-time 60 ps
|
Original
|
50Mbps
ADN2870
ADN2870
23BSC
8057 microcontroller
adc 8038
30617
76075
Block Diagram of 8057
ad2870
|
PDF
|
PWSN0008DC-A
Abstract: RJK0206DPA
Text: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
|
Original
|
RJK0206DPA
REJ03G1923-0200
PWSN0008DC-A
Chann9044
PWSN0008DC-A
RJK0206DPA
|
PDF
|
RJK0206DPA
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
|
Original
|
RJK0206DPA
REJ03G1923-0200
PWSN0008DC-A
current9044
RJK0206DPA
|
PDF
|
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
|
Original
|
DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
|
PDF
|
IBGT
Abstract: 100V 100A Mosfet DIODE PN junction diode DIODE 6790 MOSFET 50V 100A
Text: XI’AN IR-PERI Company .2 # 6 7 PRELIMINARY ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK Features ! Advanced Process Technology Ultra Low On-Resistance # Dynamic dv/dt Rating 175 C Operating Temperature o Fast Switching VDSS=100V
|
Original
|
100oC
125oC
IBGT
100V 100A Mosfet
DIODE PN junction diode
DIODE 6790
MOSFET 50V 100A
|
PDF
|
6790
Abstract: TO274 IRFPS3810 TO-274
Text: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
|
Original
|
93912B
IRFPS3810
Super-247TM
5M-1994.
O-274AA
6790
TO274
IRFPS3810
TO-274
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
|
Original
|
93912B
IRFPS3810
Super-247â
5M-1994.
O-274AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
|
Original
|
IRFPS3810PbF
Super-247â
|
PDF
|
6790
Abstract: MOSFET 50V 100A IRFPS3810PBF
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
|
Original
|
IRFPS3810PbF
Super-247TM
6790
MOSFET 50V 100A
IRFPS3810PBF
|
PDF
|
IRFPS3810
Abstract: No abstract text available
Text: PD - 93912A IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
|
Original
|
3912A
IRFPS3810
Super-247TM
5M-1994.
O-274AA
IRFPS3810
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
|
Original
|
IRFPS3810PbF
Super-247â
Rati789
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT6010JFLL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT6010JLL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT6010B2LL
APT6010LLL
O-264
O-247
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT6010JFLL
|
PDF
|
APT-6010
Abstract: No abstract text available
Text: APT6010B2FLL APT6010LFLL 600V 54A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
APT6010B2FLL
APT6010LFLL
O-264
O-264
O-247
APT-6010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
|
Original
|
APT6010JFLL
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
APT6010B2LL
APT6010LLL
O-264
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
|
Original
|
IRFPS3810PbF
Super-247TM
Super-247
O-274AA)
|
PDF
|
Diode 188
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses
|
Original
|
APT6010JLL
OT-227
Diode 188
|
PDF
|
1N33A
Abstract: 1n250 diode 1N34* diode diode 1n34 1N254 1N255 "general diode corporation" 1N1117 1N339 1N348
Text: 3869720 G E N ER A L DIODE C O R P 860 00322 GENERAL DIODE CORP ñb D T'-Ö/'V/ D eT| 301^750 0000355 0 STUD MOUNTED SILICON POWER RECTIFIERS & TYPE \ IV \ \\ % 1N24S 1N248A, B 1N249 1N249A,B 1N250 DO-5 Do-5 Do-5 Do-5 Do-5 50 50 100 100 200 1N250A, B 1N253
|
OCR Scan
|
1N248
1N248A,
1N249
1N249A,
1N250
1N250A,
1N253
1N254
1N255
1N25S
1N33A
1n250 diode
1N34* diode
diode 1n34
"general diode corporation"
1N1117
1N339
1N348
|
PDF
|
TM108
Abstract: 1N223B 1N2268 TR301 TM69 1N245S 1N244B TM37 1N2227 1N2225
Text: 3869720 GENERAL DIODE CORP GE NE R AL DIO DE 86D 00327 D 7- o - r< CORP DE^I 3 0 ^ 7 2 0 0000327 T T STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TYPE \ 1N2224A 1N2225 1N2225A 1N222S 1N222BA Do-4 Do-10 . Do-10 Do-4 . DO-4 1000 1000 1000 1200 1200
|
OCR Scan
|
Q0003S7
1N2224A
1N2225
Do-10
1N2225A
1N2226
1N222SA
1N2227A
TM108
1N223B
1N2268
TR301
TM69
1N245S
1N244B
TM37
1N2227
|
PDF
|
1NU7
Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Text: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l
|
OCR Scan
|
DDD0317
1N599
1N599A
1N600A
1N602
1N602A
1N603
1NS03A
1N604
1N604A
1NU7
1N2487
1N1492
1N2508
IN400T
1N1711
equivalent to 1N4001
1N1490
1N2484
1N20B2
|
PDF
|
2N6789
Abstract: 25S1 2N6790
Text: JAN 0 5 1988 C v w l ^ f c SEMELAB LTD 37E D • ^ 0133107 000G307 SEM ELAB b ■ SNLB 1 2N 6789 2N 6790 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dim ensions in mm I 1 Î • FA ST SWITCHING f i.5 mox. i • MOTOR CONTROLS <_12.7_ mox PIN 1 -S o u rce
|
OCR Scan
|
T-39-09
0D0030?
2N6789
2N6789
2N6790
TC-25
2N6790
25S1
|
PDF
|
