RURP6120CC
Abstract: No abstract text available
Text: RURP6120CC 6A, 1200V Ultrafast Dual Diode January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1
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RURP6120CC
O-220AB
175oC
RURP6120CC
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RURP6120CC
Abstract: No abstract text available
Text: RURP6120CC 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1
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RURP6120CC
O-220AB
175oC
RURP6120CC
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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RURP6120CC
Abstract: No abstract text available
Text: RURP6120CC 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE 2 CATHODE ANODE 1
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RURP6120CC
O-220AB
RURP6120CC
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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PDF
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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diode 1334
Abstract: RHR6120C RHRP6120CC TA49058
Text: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode July 1996 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time
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Original
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RHRP6120CC
RHRP6120CC
175oC
1-800-4-HARRIS
diode 1334
RHR6120C
TA49058
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PDF
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diode 1334
Abstract: RURP6120CC
Text: RURP6120CC S E M I C O N D U C T O R 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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Original
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RURP6120CC
O-220AB
RURP6120CC
1-800-4-HARRIS
diode 1334
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC July 1996 Title HRP 20C bt A, 00V pert al ode utho rpoon, pert al ode, ache ergy ted, 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride
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Original
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RHRP6120CC
RHRP6120CC
RHR6120C
TA49058
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PDF
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode January 1996 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC TO-220AB o ANODE 2 CATHODE ANODE 1 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RHRP6120CC
O-220AB
RHRP6120CC
1-800-4-HARRIS
RHR6120C
TA49058
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PDF
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Diode B2x
Abstract: diode 6A 1000v E80276 QM300DY-2H Welder
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300DY-2H
E80276
E80271
Diode B2x
diode 6A 1000v
E80276
QM300DY-2H
Welder
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QM300HA-2H
Abstract: 1000V 20A transistor QM300HA-2H equivalent E80276 9303C
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300HA-2H
E80276
E80271
108MAX.
62MAX.
36MAX.
QM300HA-2H
1000V 20A transistor
QM300HA-2H equivalent
E80276
9303C
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f12n10
Abstract: 12n100p f12n
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions
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IXFH12N100P
IXFV12N100P
IXFV12N100PS
300ns
PLUS220
PLUS220SMD
12N100P
f12n10
f12n
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f12n10
Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
Text: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFH12N100P
IXFV12N100P
IXFV12N100PS
300ns
PLUS220
150GS
12N100P
1-08-A
f12n10
PLUS220SMD
IXFH12N100P
IXFV12N100PS
diode 6A 1000v
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Untitled
Abstract: No abstract text available
Text: KBL6005 THRU KBL610 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 6A Outline Dimensions and Mark KBL VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability
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KBL6005
KBL610
22-Sep-11
21yangjie
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS
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IXFH12N100P
IXFV12N100P
IXFV12N100PS
300ns
PLUS220
12N100P
1-08-A
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APT10090BFLL
Abstract: APT10090SFLL
Text: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET BFLL TO -2 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering
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APT10090BFLL
APT10090SFLL
O-247
APT10090BFLL
APT10090SFLL
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DD 127 D
Abstract: No abstract text available
Text: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10090BFLL
APT10090SFLL
O-247
DD 127 D
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APT10090BFLL
Abstract: APT10090SFLL
Text: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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Original
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APT10090BFLL
APT10090SFLL
O-247
O-247
APT10090BFLL
APT10090SFLL
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PDF
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Untitled
Abstract: No abstract text available
Text: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET 0.950 BFLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering
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APT10090BFLL
APT10090SFLL
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT10090BLL APT10090SLL 1000V 12A 0.950 BLL POWER MOS 7 MOSFET TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
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APT10090BLL
APT10090SLL
O-247
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PDF
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APT10090BLL
Abstract: APT10090SLL JESD24
Text: APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET BLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
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APT10090BLL
APT10090SLL
O-247
APT10090BLL
APT10090SLL
JESD24
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PDF
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6A4 DIODE
Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Text: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004
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OCR Scan
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
DO-41
DO-15
RL251
6A4 DIODE
AX-52 diode
diode 6a4
diode 6a6
diode rL257
A106
6A1 diode
6A6 DIODE
diode 6A2
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IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
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OCR Scan
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1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
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