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    IXFH12N100P Search Results

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    IXFH12N100P Price and Stock

    Littelfuse Inc IXFH12N100P

    MOSFET N-CH 1000V 12A TO247AD
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    DigiKey IXFH12N100P Tube 270 300
    • 1 -
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    • 1000 $4.78313
    • 10000 $4.78313
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    Verical IXFH12N100P 690 30
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    • 100 $4.671
    • 1000 $4.671
    • 10000 $4.671
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    Arrow Electronics IXFH12N100P 716 46 Weeks 30
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    • 100 $4.671
    • 1000 $4.671
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    RS IXFH12N100P Bulk 8 Weeks 30
    • 1 -
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    • 100 $7.4
    • 1000 $7.4
    • 10000 $7.4
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    IXYS Corporation IXFH12N100P

    MOSFETs 12 Amps 1000V
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    Mouser Electronics IXFH12N100P 1,081
    • 1 $9.19
    • 10 $8.4
    • 100 $7.14
    • 1000 $4.78
    • 10000 $4.78
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    Newark IXFH12N100P Bulk 402 1
    • 1 $6.66
    • 10 $6.66
    • 100 $6.66
    • 1000 $6.66
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    Future Electronics IXFH12N100P Tube 46 Weeks 300
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    • 100 $5.08
    • 1000 $4.75
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    TTI IXFH12N100P Tube 300 30
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    • 100 $4.84
    • 1000 $4.84
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    TME IXFH12N100P 1
    • 1 $9.17
    • 10 $7.29
    • 100 $6.55
    • 1000 $6.55
    • 10000 $6.55
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    IXYS Integrated Circuits Division IXFH12N100P

    MOSFET DIS.12A 1000V N-CH TO247-3 HIPERFET THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFH12N100P
    • 1 $9.24198
    • 10 $9.24198
    • 100 $8.4018
    • 1000 $8.4018
    • 10000 $8.4018
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    IXFH12N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH12N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247 Original PDF

    IXFH12N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A

    IXFH12N100P

    Abstract: 12n100p f12n10
    Text: PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD O-247 12N100P 1-08-A f12n10

    f12n10

    Abstract: 12n100p f12n
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions


    Original     		PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD 12N100P f12n10 f12n

    f12n10

    Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
    Text: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 150GS 12N100P 1-08-A f12n10 PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v