Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF1400R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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diode c24 06 6D
Abstract: LTC4098-3.6
Text: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF450R12IE4
326A11
89F6F8
36F1322
B2CC36
DC336E
1231423567896AB
4112CD3567896EF
diode c24 06 6D
LTC4098-3.6
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C26B
Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Text: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IE4
326A11
78F6F8
36F1322
A2CB36
CC236D
1231423567896AB
4112CD3567896EF
C26B
GDS C25/0
diode e61
GDS C25/1231423567896AB
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF600R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF600R12IE4
326A11
89F6F8
36F1322
B2CC36
DC336E
1231423567896AB
4112CD3567896EF
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF600R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC
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FF900R12IP4D
366C4326BC
86F6F8
36F1322
A2CB36
5C336C
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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diode F4 6A
Abstract: 4F36F123
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS100B12N3E4
428654F4
D3264
ECFC24
B32DC
D3692C
CD3288
ECFC26
B32DC6
6934F
diode F4 6A
4F36F123
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ZXMN6A11DN8
Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
Text: ZXMN6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN6A11DN8
ZXMN6A11DN8TA
ZXMN6A11DN8TC
ZXMN6A11DN8
ZXMN6A11DN8TA
ZXMN6A11DN8TC
6a11d
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ZXMN6A11G
Abstract: ZXMN6A11GFTA ZXMN6A11GFTC
Text: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A11G
OT223
OT223
ZXMN6A11GFTA
ZXMN6A11GFTC
ZXMN6A11G
ZXMN6A11GFTA
ZXMN6A11GFTC
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diode 6a11
Abstract: 6a11
Text: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A11G
OT223
OT223
ZXMN6A11GA
ZXMN6A11GC
diode 6a11
6a11
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ZXMN6A11DN8
Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC
Text: ZXMN6A11DN8 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A11DN8
ZXMN6A11DN8TA
ZXMN6A11DN8TC
ZXMN6A11DN8
ZXMN6A11DN8TA
ZXMN6A11DN8TC
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sot223 device Marking
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V ZXMN6A11G ZXMN6A11GTA ZXMN6A11GTC
Text: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A11G
OT223
OT223
ZXMN6A11GTA
ZXMN6A11GTC
12mephone:
sot223 device Marking
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V
ZXMN6A11G
ZXMN6A11GTA
ZXMN6A11GTC
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Untitled
Abstract: No abstract text available
Text: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast
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ZXMN6A11DN8
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ZXMN6A11DN8TA
Abstract: ZXMN6A11DN8 6a11d
Text: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast
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ZXMN6A11DN8
ZXMN6A11DN8TA
ZXMN6A11DN8
6a11d
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ZXMN6A11G
Abstract: ZXMN6A11GTA ZXMN6A11GTC
Text: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them
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ZXMN6A11G
OT223
ZXMN6A11GTA
ZXMN6A11
ZXMN6A11G
ZXMN6A11GTA
ZXMN6A11GTC
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • ID V BR DSS RDS(on) TA = 25°C 120m @ VGS= 10V 4.4A 180m @ VGS= 4.5V 3.5A Fast switching speed Low gate drive Low input capacitance
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ZXMN6A11G
AEC-Q101
J-STD-020
MIL-STD-202,
DS33556
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diode 6a11
Abstract: 6a11 ZXMN6A11G ZXMN6A11GTA
Text: A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • ID V BR DSS RDS(on) TA = 25°C 120mΩ @ VGS= 10V 4.4A 180mΩ @ VGS= 4.5V 3.5A Fast switching speed Low gate drive
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ZXMN6A11G
AEC-Q101
J-STD-020
MIL-STD-202,
DS33556
diode 6a11
6a11
ZXMN6A11G
ZXMN6A11GTA
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zener diode A22
Abstract: ZENER A22 transistor smd 2ay 6ay smd A22 SMD CODE smd zener color codes blue ring on smd zener diode black yellow blue ring on smd diode A22W-3M-6D-02 BA9S
Text: Knob-type Selector Switch Cylindrical 22/25-dia. A22@ Install in 22-dia. or 25-dia. Panel Cutout • Lever for easily mounting and removing the Switch Unit ■ Increase wiring efficiency with three-row mounting of Switch Blocks. ■ Finger protection mechanism on Switch Unit provided as a
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22/25-dia.
22-dia.
25-dia.
zener diode A22
ZENER A22
transistor smd 2ay
6ay smd
A22 SMD CODE
smd zener color codes
blue ring on smd zener diode
black yellow blue ring on smd diode
A22W-3M-6D-02
BA9S
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smd a22t
Abstract: black yellow blue ring on smd diode ZENER A22 blue ring on smd zener diode A22 SMD CODE resin capacitor a225 spst"Pushbutton Switch" datasheet A22H A22-12 A22Z-3500-1
Text: Pushbutton Switch Cylindrical 22/25-dia. A22 Install in 22-dia. or 25-dia. Panel Cutout (When Using a Ring) • Lever for easily mounting and removing the Switch Unit. ■ Increase wiring efficiency with three-row mounting of Switch Blocks. ■ Finger protection mechanism on Switch Unit provided as a
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22/25-dia.
22-dia.
25-dia.
smd a22t
black yellow blue ring on smd diode
ZENER A22
blue ring on smd zener diode
A22 SMD CODE
resin capacitor a225
spst"Pushbutton Switch" datasheet
A22H
A22-12
A22Z-3500-1
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Untitled
Abstract: No abstract text available
Text: DATASHEET Digital DC/DC PMBus 10A Power Module ZL9010M Features The ZL9010M is a 10A adjustable output, step-down synchronous PMBus-compliant digital power supply. Included in the module is a high-performance digital PWM controller, power MOSFETs, an inductor and all the passive components
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ZL9010M
ZL9010M
FN8422
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Untitled
Abstract: No abstract text available
Text: DATASHEET Digital DC/DC PMBus 12A Module ZL9101M Features The ZL9101M is a 12A, variable output, step-down PMBus-compliant digital power supply. Included in the module is a high-performance digital PWM controller, power MOSFETs, an inductor, and all the passive components required for a
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ZL9101M
ZL9101M
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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