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    ZXMN6A11GTA Search Results

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    ZXMN6A11GTA Price and Stock

    Diodes Incorporated ZXMN6A11GTA

    MOSFET N-CH 60V 3.1A SOT223
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    DigiKey ZXMN6A11GTA Cut Tape 4,393 1
    • 1 $1.09
    • 10 $0.68
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    • 1000 $0.34552
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    ZXMN6A11GTA Digi-Reel 4,393 1
    • 1 $1.09
    • 10 $0.68
    • 100 $1.09
    • 1000 $0.34552
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    ZXMN6A11GTA Reel 4,000 1,000
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    • 1000 $0.31309
    • 10000 $0.23799
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    Avnet Americas ZXMN6A11GTA Reel 8 Weeks 1,000
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    • 10000 $0.18659
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    ZXMN6A11GTA Reel 1,000
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    Mouser Electronics ZXMN6A11GTA 3,717
    • 1 $0.75
    • 10 $0.585
    • 100 $0.402
    • 1000 $0.258
    • 10000 $0.237
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    RS ZXMN6A11GTA Bulk 5
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    Future Electronics ZXMN6A11GTA Reel 170,000 8 Weeks 1,000
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    • 10000 $0.185
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    ZXMN6A11GTA Reel 6,000 8 Weeks 1,000
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    • 10000 $0.185
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    ZXMN6A11GTA Reel 8 Weeks 1,000
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    • 1000 $0.193
    • 10000 $0.185
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    ZXMN6A11GTA Cut Tape/Mini-Reel 8 Weeks 1
    • 1 $0.22
    • 10 $0.205
    • 100 $0.198
    • 1000 $0.182
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    Bristol Electronics ZXMN6A11GTA 95
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    ComSIT USA ZXMN6A11GTA 16,263
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    Avnet Asia ZXMN6A11GTA 8 Weeks 1,000
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    Avnet Silica ZXMN6A11GTA 37,000 10 Weeks 1,000
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    New Advantage Corporation ZXMN6A11GTA 151,000 1
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    Diodes Incorporated ZXMN6A11GTA-52

    - Tape and Reel (Alt: ZXMN6A11GTA-52)
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    Avnet Americas ZXMN6A11GTA-52 Reel 12 Weeks 1,000
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    Zetex / Diodes Inc ZXMN6A11GTA

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.8A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ZXMN6A11GTA 30
    • 1 $0.36
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    • 100 $0.3
    • 1000 $0.3
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    Component Electronics, Inc ZXMN6A11GTA 10
    • 1 $1.54
    • 10 $1.54
    • 100 $1.15
    • 1000 $1
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    ZXMN6A11GTA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN6A11GTA Zetex Semiconductors 60V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN6A11GTA Zetex Semiconductors 60V SOT223 N-channel enhancement mode MOSFET Original PDF

    ZXMN6A11GTA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being


    Original
    ackT1951GTAÂ ZX5T849GTAÂ ZX5T851GTAÂ ZX5T853GTAÂ ZX5T949GTAÂ ZX5T951GTCÂ ZX5T951GTAÂ ZX5T953GTAÂ ZX5T955GTAÂ ZXM62N03GTAÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: DATE: February 15th, 2011 PCN #: 2037 PCN Title: Qualification of Epoxy as Alternate Die Attach Material for SOT223 Packaged Products. Dear Customer: This is an announcement of change s to products that are currently being


    Original
    OT223 DIC-034 PCN-2037 BSP75GTA BSP75NTA ZVN2106GTA ZVN2110GTA ZVN2120GTA ZVN4206GTA ZVN4206GTC PDF

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


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    DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6 PDF

    ZXMN6A11G

    Abstract: ZXMN6A11GTA
    Text: ZXMN6A11G 60V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 4.4 0.180 @ VGS= 4.5V 3.5 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


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    ZXMN6A11G OT223 ZXMN6A11G ZXMN6A11GTA PDF

    diode 6a11

    Abstract: 6a11 ZXMN6A11G ZXMN6A11GTA
    Text: A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • ID V BR DSS RDS(on) TA = 25°C 120mΩ @ VGS= 10V 4.4A 180mΩ @ VGS= 4.5V 3.5A Fast switching speed Low gate drive


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    ZXMN6A11G AEC-Q101 J-STD-020 MIL-STD-202, DS33556 diode 6a11 6a11 ZXMN6A11G ZXMN6A11GTA PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


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    2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


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    AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA PDF

    ZXMN6A11G

    Abstract: ZXMN6A11GTA ZXMN6A11GTC
    Text: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


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    ZXMN6A11G OT223 ZXMN6A11GTA ZXMN6A11 ZXMN6A11G ZXMN6A11GTA ZXMN6A11GTC PDF

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


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    2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA PDF

    sot223 device Marking

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V ZXMN6A11G ZXMN6A11GTA ZXMN6A11GTC
    Text: ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 3.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN6A11G OT223 OT223 ZXMN6A11GTA ZXMN6A11GTC 12mephone: sot223 device Marking N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V ZXMN6A11G ZXMN6A11GTA ZXMN6A11GTC PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • ID V BR DSS RDS(on) TA = 25°C 120m @ VGS= 10V 4.4A 180m @ VGS= 4.5V 3.5A Fast switching speed Low gate drive Low input capacitance


    Original
    ZXMN6A11G AEC-Q101 J-STD-020 MIL-STD-202, DS33556 PDF