IRG4PC50FD
Abstract: No abstract text available
Text: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91469B
IRG4PC50FD
O-247AC
O-247AC
IRG4PC50FD
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PDF
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IRG4PC50FD
Abstract: IRG4PC50
Text: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91469B
IRG4PC50FD
O-247AC
O-247AC
IRG4PC50FD
IRG4PC50
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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Original
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91462B
IRG4PC30UD
O-247AC
O-247AC
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PDF
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IRG4PC40FD
Abstract: No abstract text available
Text: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91464B
IRG4PC40FD
O-247AC
O-247AC
IRG4PC40FD
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PDF
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IRG4PC30UD
Abstract: IRG4PC30
Text: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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Original
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91462B
IRG4PC30UD
O-247AC
O-247AC
IRG4PC30UD
IRG4PC30
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PDF
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IRG4PC30FD
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91460B
IRG4PC30FD
O-247AC
O-247AC
IRG4PC30FD
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PDF
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IRG4PC30FD
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91460B
IRG4PC30FD
O-247AC
O-247AC
IRG4PC30FD
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PDF
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IRG4PC30UD
Abstract: No abstract text available
Text: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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Original
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91462B
IRG4PC30UD
O-247AC
O-247AC
IRG4PC30UD
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PDF
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IRG4PC40FD
Abstract: No abstract text available
Text: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91464B
IRG4PC40FD
O-247AC
O-247AC
IRG4PC40FD
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91469B
IRG4PC50FD
O-247AC
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91460B
IRG4PC30FD
O-247AC
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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Original
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91464B
IRG4PC40FD
O-247AC
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated
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Original
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IRL520L,
SiHL520L
2002/95/EC
O-262)
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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Original
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SiHP17N60D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated
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Original
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IRL520L,
SiHL520L
O-262)
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRL520L
Abstract: No abstract text available
Text: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated
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Original
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IRL520L,
SiHL520L
2002/95/EC
O-262)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRL520L
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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Original
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SiHP17N60D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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Original
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SiHP17N60D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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Original
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SiHP17N60D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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MB91F467R
Abstract: D-SUB 9 PIN to 9 pin case jp83 MB91V460 FR60 MB91460
Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910053-16 MB91460 SERIES EVALUATION BOARD SK-91467R-176PMC USER GUIDE SK-91467R-176PMC User Guide Revision History Revision History Date 2006/12/06 2007/03/02 2007/06/28 2007/07/31 2007/11/05 2007/12/27
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Original
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FMEMCU-UG-910053-16
MB91460
SK-91467R-176PMC
SK-91467R-176PMC
SK-91467R-176PM91467R-176PMC
MB91F467R
D-SUB 9 PIN to 9 pin case
jp83
MB91V460
FR60
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PDF
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S11074
Abstract: No abstract text available
Text: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC
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Original
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SiHP17N60D
2002/95/EC
O-220AB
O-220AB
SiHP17N60D-E3
11-Mar-11
S11074
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PDF
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S11074
Abstract: No abstract text available
Text: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC
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Original
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SiHP17N60D
2002/95/EC
O-220AB
O-220AB
SiHP17N60D-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S11074
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PDF
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IRFD020
Abstract: IL300-D
Text: IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 50 RDS(on) () VGS = 10 V Available • Compact, End Stackable 0.10 RoHS* • Fast Switching Qg (Max.) (nC) 24 Qgs (nC) 7.1 • Ease of Paralleling
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Original
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IRFD020,
SiHFD020
2002/95/EC
11-Mar-11
IRFD020
IL300-D
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PDF
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jp69
Abstract: MB91V460 MB91460 MB91F467R FR60
Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910053-17 MB91460 SERIES EVALUATION BOARD SK-91467R-176PMC USER GUIDE SK-91467R-176PMC User Guide Revision History Revision History Date 2006/12/06 2007/03/02 2007/06/28 2007/07/31 2007/11/05 2007/12/27
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Original
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FMEMCU-UG-910053-17
MB91460
SK-91467R-176PMC
SK-91467R-176PMC
Fuji67R-176PMC
jp69
MB91V460
MB91F467R
FR60
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PDF
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