U-LD-98A041A-preliminary
Abstract: U-LD-98A041A laser diode 980nm 100mw laser diode 100mw laser diode 980 nm
Text: U-LD-98A041A-preliminary UNION OPTRONICS CORP. 980nm Laser Diode 980nm Laser Diode U-LD-98A041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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U-LD-98A041A-preliminary
980nm
U-LD-98A041A-preliminary
U-LD-98A041A
laser diode 980nm
100mw laser diode
100mw laser diode 980 nm
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U-LD-98A046D-preliminary
Abstract: U-LD-98A046D TO-CAN laser diode 980nm 100mw laser diode 100mw laser diode 980 nm Optronics
Text: U-LD-98A046D-preliminary UNION OPTRONICS CORP. 980nm Laser Diode 980nm Laser Diode U-LD-98A046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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U-LD-98A046D-preliminary
980nm
U-LD-98A046D-preliminary
U-LD-98A046D
TO-CAN
laser diode 980nm
100mw laser diode
100mw laser diode 980 nm
Optronics
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Untitled
Abstract: No abstract text available
Text: SOT-23 PIN Diodes SMP1352-001 Features SOT-23 • Surface Mount SOT-23 Package 0.030 0.8 mm 3 PLCS. ■ High Voltage Switching PIN Diode 0.070 (1.8 mm) ■ Low Forward Resistance Attenuator PIN Diode 0.035 (0.9 mm) 3 PLCS. ■ Priced for High Volume Wireless
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OT-23
SMP1352-001
OT-23
SMP1352-001
6/98A
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diode 98A
Abstract: No abstract text available
Text: 4 Diode PI Attenuator SMP1307-027 5 Lead SOT Features • 4 PIN Diodes in 5 Lead SOT Package 0.083 2.1 mm MAX. 0.067 (1.7 mm) MIN. ■ Low Distortion PIN Diode Design 0.118 (3.0 mm) MAX. 0.087 (2.2 mm) MIN. ■ Wide Resistance Dynamic Range 0.069 (1.75 mm) MAX.
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SMP1307-027
SMP1307
8/98A
diode 98A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFK98N50P3 IXFX98N50P3 Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 = = 500V 98A 50m 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions
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IXFK98N50P3
IXFX98N50P3
250ns
O-264
15apacitance
98N50P3
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ixxn200n60b3h1
Abstract: IXXN200N60B3 200n60
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN200N60B3H1
IC110
110ns
OT-227B,
E153432
IF110
50/60Hz
200N60B3
ixxn200n60b3h1
IXXN200N60B3
200n60
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXXN200N60B3H1 = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IC110
IXXN200N60B3H1
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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SOT-227B
Abstract: ixxn200n60 ixxn200n60c3h1 DS100511
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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20-60kHz
IXXN200N60C3H1
IC110
OT-227B
E153432
IF110
50/60Hz
200N60C3
1-05-12-A
SOT-227B
ixxn200n60
ixxn200n60c3h1
DS100511
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXN200N60C3H1
IC110
20-60kHz
OT-227B
E153432
IF110
200N60C3
1-05-12-A
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8AC1
Abstract: MC34017A MC34017AP scr variable frequency drive circuit diagram 98A42420B TELEPHONE RINGER C200
Text: Freescale Semiconductor Technical Data MC34017A Rev 3.0, 3/2006 Telephone Tone Ringer Bipolar Linear/I2L 34017A Features • Complete Telephone Bell Replacement Circuit with Minimum External Components • On-Chip Diode Bridge and Transient Protection • Direct Drive for Piezoelectric Transducers
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MC34017A
4017A
4017A-1:
4017A-2:
4017A-3:
98A42420B
98A42564B
MC34017AD/DR2
8AC1
MC34017A
MC34017AP
scr variable frequency drive circuit diagram
98A42420B
TELEPHONE RINGER
C200
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Data Sheet RB056L-40 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 2.6±0.15 1) Small power mold type 4.2 5.0±0.3 4.5±0.2 lFeatures 1.2±0.3 2.0 2.0 0.1±0.02 1 2 (PMDS) PMDS 2.0±0.2 1.5±0.2
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RB056L-40
OD-106
R1102A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Data Sheet RB160MM-30 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 3.5±0.2 0.12 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability
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RB160MM-30
OD-123FL
R1102A
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5sdd06d6000
Abstract: No abstract text available
Text: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties § Low forward voltage drop § Low recovery charge § High operating temperature § Low leakage current Key Parameters = 6 000 V RRM = 662 I FAVm = 10 500 I FSM = 1.066 V TO
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06D6000
06D6000
06D5800
1768/138a,
D/009/98a
Jul-10
Jul-10
5sdd06d6000
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AN1001
Abstract: IRFBA90N20D
Text: PD - 94300C SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 200V RDS on max ID 0.023W 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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94300C
IRFBA90N20D
AN1001)
Super-220
Super-220
AN1001
IRFBA90N20D
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IRFBA90N20D
Abstract: AN1001
Text: PD - 94300 SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 200V RDS on max ID 0.023Ω 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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IRFBA90N20D
AN1001)
Super-220TM
IRFBA90N20D
AN1001
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AN1001
Abstract: IRFBA90N20D
Text: PD - 94300A SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 200V RDS on max ID 0.023Ω 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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4300A
IRFBA90N20D
AN1001)
Super-220TM
AN1001
IRFBA90N20D
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: ESAlpha PI Attenuator PIN Diode SMP1307-019 SOT-143 Features • 3 PIN Diodes in SOT-143 Package I - 2 0.041 (.85 mm mm) |— - ■ Low Distortion PIN Diode Design S. 0.071 0.075 1(1.8 mm)h mm)V I- \(1.9 1 ■ Wide Resistance Dynamic Range 0.047?
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OT-143
SMP1307-019
OT-143
SMP1307-019
SMP1307
OD-323
SMP1307-011)
OT-23
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Untitled
Abstract: No abstract text available
Text: ESAlpha Low Inductance Shunt PIN Diode SMP1322-017 Features 9OT-143 • High Isolation Switching Diode >20 dB at 900 MHz 0 .0 7 9 I - “ 1 2 m m r - E_ ■ Low Insertion Loss 0 .0 7 5 71 <1 -8 r (1 .9 171171^ ■ Standard SOT-143 Package (1.2 mm) I
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SMP1322-017
OT-143
9OT-143
SMP1322-017
9/98A
oSMP1322-011
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1N2155
Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Text: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward
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515TQR
1N248B-
1N1195A-
1N2154-
1N4529-
1N1183A-
1N3899-
1N3909-
1N3208-
1N248B
1N2155
1N249B
1N3785
1N1184
1N3786
1N3899
1N4529
1N1183A
1N1191A
1N1195A
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diode ring mixer
Abstract: ALPHA INDUSTRIES M18L
Text: ESAlpha Lead Surface Mount Mixer M 18L Features • Low Conversion Loss 6.5 dB Typ. ■ High Isolation 28 dB (Typ.) ■ Low Profile 0.085 (Max.) ■ Stress Relieved Leaded Package ■ High Performance Diode Ring Mixer Description Pin Out The M18L is designed to be used in wireless systems that
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3/98A
diode ring mixer
ALPHA INDUSTRIES
M18L
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M25L
Abstract: diode ring mixer
Text: ESAlpha Leaded Surface Mount Mixer M 25L Features • Low Conversion Loss 5.0 dB Typ. ■ High Isolation 25 dB (Typ.) ■ Low Profile 0.085 (Max.) ■ Stress Relieved Leaded Package ■ High Performance Diode Ring Mixer Pin Out Description The M25L is designed to be used in wireless systems that
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3/98A
M25L
diode ring mixer
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diode ring mixer
Abstract: M38L ALPHA INDUSTRIES
Text: ESAlpha Leaded Surface Mount Mixer M 38L Features • Low Conversion Loss 5.0 dB Typ. ■ High Isolation 25 dB (Typ.) ■ Low Profile 0.085 (Max.) ■ Stress Relieved Leaded Package ■ High Performance Diode Ring Mixer Pin Out Description T he M 38L is designed to be used in w ireless/V SAT
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3/98A
diode ring mixer
M38L
ALPHA INDUSTRIES
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