DIODE B12
Abstract: No abstract text available
Text: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●
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TSM4416D
TSM4416DCS
DIODE B12
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marking B12 diode SCHOTTKY
Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520G-30
OD-723F
OD-723F
MIL-STD-202,
C/10s
marking B12 diode SCHOTTKY
DIODE B12
smd diode code B12
B12 DIODE
smd marking b12
marking B12 diode
smd diode b12
diode marking code B12
TSC Date Code marking
smd diode marking code g
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Untitled
Abstract: No abstract text available
Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520G-30
OD-723F
OD-723F
MIL-STD-202,
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DIODE B12
Abstract: B12 DIODE MOSFET 800V 3A MOSFET 800V 15A DIODE B12 41 MOSFET 50V 100A TO-220 DIODE B12 48 diode 800v DIODE B12 45 N-channel Power MOSFET
Text: TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 800 4.2 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N80 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
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TSM3N80
O-220
ITO-220
O-251
O-252
TSM3N80
TSM3N80CH
TSM3N80CP
TSM3N80CZ
O-251
DIODE B12
B12 DIODE
MOSFET 800V 3A
MOSFET 800V 15A
DIODE B12 41
MOSFET 50V 100A TO-220
DIODE B12 48
diode 800v
DIODE B12 45
N-channel Power MOSFET
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DIODE B12 41
Abstract: TSG25N120CN B12 DIODE
Text: TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG25N120CN
TSG25N120CN
30pcs
DIODE B12 41
B12 DIODE
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DIODE B12
Abstract: B12 DIODE TSG15N120CN
Text: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG15N120CN
TSG15N120CN
30pcs
DIODE B12
B12 DIODE
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TSG40N120CE
Abstract: to264 B12 DIODE IGBT 40A TSG40N DIODE b12 28 DIODE B12 88 DIODE B12
Text: TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG40N120CE
O-264
TSG40N120CE
25pcs
to264
B12 DIODE
IGBT 40A
TSG40N
DIODE b12 28
DIODE B12 88
DIODE B12
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DIODE B12
Abstract: B12 diode CCD77-00 DIODE B12 45 21-B12 Scientific Imaging Technologies essex 8027 e2v ccd ccd 512 x 512
Text: CCD77-00 Front Illuminated High Performance IMO Device FEATURES * 512 by 512 Image Format * Image Area 12.3 x 12.3 mm * Full-Frame Operation * 24 mm Square Pixels * Low Noise Output Amplifiers * 100% Active Area * Inverted Mode Operation APPLICATIONS * Spectroscopy
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CCD77-00
CCD77
DIODE B12
B12 diode
DIODE B12 45
21-B12
Scientific Imaging Technologies
essex 8027
e2v ccd
ccd 512 x 512
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DIODE B12
Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
Text: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.
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TSM8N50
O-251
O-252
TSM8N50CH
75pcs
TSM8N50CP
O-252
DIODE B12
B12 DIODE
marking B12 diode
N-channel 500V mosfet
B12 68 diode
MARKING CODE mosfet
high power diode 500v
TSM8N50
DIODE B12 48
n-channel 250V power mosfet dpak
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500V 25A Mosfet
Abstract: DIODE B12
Text: TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) (max.) ID (A) 500 1.5 @ VGS =10V 5 General Description TO-251 (IPAK) The TSM5NB50 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM5NB50
O-220
ITO-220
O-251
O-252
TSM5NB50
TSM5NB50CH
TSM5NB50CP
TSM5NB50CZ
O-251
500V 25A Mosfet
DIODE B12
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DIODE B12 51
Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Text: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers
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TSG60N100CE
O-264
TSG60N100CE
25pcs
DIODE B12 51
IGBT 1000V .200A
tsg60n100
B12 68 diode
IGBT 1000V 60A
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MOSFET 800V
Abstract: MOSFET 20a 800v TSM4N80
Text: TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 ID (A) 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM4N80
O-220
ITO-220
TSM4N80
MOSFET 800V
MOSFET 20a 800v
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DIODE W1 SMD
Abstract: DIODE B12 B12 DIODE smd diode code B12 W1 diode diode w1 TSS0230L smd diode w1 smd diode b12 smd diode code A
Text: TSS0230L SMD Schottky Barrier Diode Small Signal Diode 0402（DFN1006） Features Halogen free low forward voltage Designed for mounting on small surface Extremely thin/leadless package Majority carrier conduction Green compound Halogen free with suffix "G" on
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TSS0230L
0402DFN1006
C/10s
MIL-STD-202,
DIODE W1 SMD
DIODE B12
B12 DIODE
smd diode code B12
W1 diode
diode w1
smd diode w1
smd diode b12
smd diode code A
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DIODE B12 51
Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
Text: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology
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TSM9434
TSM9434CS
DIODE B12 51
DIODE B12
B12 DIODE
ultra low igss pA mosfet
DIODE B12 60
p-CHANNEL MOSFET
P-Channel MOSFET code 1A
P-Channel mosfet 25v sop8
mosfet marking B12
diode marking code B12
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HTSSOP32
Abstract: TO817 transil B14
Text: SCLT3-8BT8 Protected digital input termination with serialized state transfer Features • 8-input circuit in common ground low side topology ■ Wide range input DC Voltage VI : -30 V to 35 V – On state threshold : < 11 V with RI = 2.2 kΩ – Off state current threshold: > 1.5 mA
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16-bit
HTSSOP32
TO817
transil B14
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Untitled
Abstract: No abstract text available
Text: CGS74LCT2524 1 to 4 Minimum Skew 300 ps 3V Clock Driver General Description Features This minimum skew clock driver is a 3V option of the current CGS74CT2524 Minimum Skew Clock Driver and is designed for Clock Generation and Support (CGS) applications operating at low voltage high frequencies This device
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CGS74LCT2524
CGS74CT2524
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TSM4513D
Abstract: P-Channel mosfet 25v sop8 mosfet marking B12
Text: TSM4513D Complementary Enhancement MOSFET SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 N-Channel 20 P-Channel -20 ID (A) 14 @ VGS = 4.5V 6 16 @ VGS = 2.5V
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TSM4513D
TSM4513DCS
TSM4513D
P-Channel mosfet 25v sop8
mosfet marking B12
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Untitled
Abstract: No abstract text available
Text: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) Protects one birectional I/O line Working Voltage : 24V Pb free version, RoHS compliant, and Halogen free
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TESDC24V
OD-323
IEC61000-4-2
IEC61000-4-4
OD-323
MIL-STD-202,
C/10s
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transistor package SOT-723
Abstract: SOT-723 723 ic
Text: 2SA2029-Q/R/S PNP bipolar Transistor Small Signal Diode SOT-723 A F B E Features Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on
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2SA2029-Q/R/S
OT-723
MIL-STD-202,
C/10s
31TYP
-50mA
transistor package SOT-723
SOT-723
723 ic
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Untitled
Abstract: No abstract text available
Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)
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TSM160N10
O-220
154nC
300pF
TSM160N10CZ
50pcs
Alex121123
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ACPL-70L
Abstract: transil diode marking CKF AN2846 AN2853 EN60947-5-2 IEC61131-2 VNI8200XP spi Low Side Driver ST SCLT3-8BT8-TR
Text: SCLT3-8BT8 Protected digital input termination with serialized state transfer Features • 8-input circuit in common ground low side topology ■ Wide range input DC Voltage VI : -30 V to 35 V – On state threshold : < 11 V with RI = 2.2 kΩ – Off state current threshold: > 1.5 mA
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HTSSOP-38
16-bit
ACPL-70L
transil diode
marking CKF
AN2846
AN2853
EN60947-5-2
IEC61131-2
VNI8200XP
spi Low Side Driver ST
SCLT3-8BT8-TR
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DIODE B12 51
Abstract: heat exchanger power led heat sink ASM01C020 ASM14 australia heat sink ASM02C040 ASM05C060 44In42Sn14Cd
Text: Industrial Microphotonics Company CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
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785-1064nm)
laser2000
B-12/99
DIODE B12 51
heat exchanger
power led heat sink
ASM01C020
ASM14
australia heat sink
ASM02C040
ASM05C060
44In42Sn14Cd
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BAV99W RFG
Abstract: No abstract text available
Text: BAV99W Switching Diode Array Preliminary Small Signal Diode SOT-323 A F B Features E Surface device type mounting Moisture sensitivity level 1 C G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on
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BAV99W
OT-323
OT-323
MIL-STD-202,
C/10s
BAV99W RFG
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200
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