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    DIODE B12 41

    Abstract: TSG25N120CN B12 DIODE
    Text: TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers


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    TSG25N120CN TSG25N120CN 30pcs DIODE B12 41 B12 DIODE PDF