Untitled
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD201-B2-03LRH Bi-directional Dual Diode for ESD/Transient Protection ESD201-B2-03LRH Data Sheet Revision 1.1, 2012-09-26 Final Power Management & Multimarket Edition 2012-09-26 Published by Infineon Technologies AG
|
Original
|
PDF
|
ESD201-B2-03LRH
AN210:
|
schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
|
Original
|
PDF
|
OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
|
FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
|
Original
|
PDF
|
OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
|
4148 diode
Abstract: CJ 4148 ic 4148 TRANSISTOR 4148 transistor 2222a
Text: MMDT1DA1 ADVANCE INFORMATION DUAL TRANSISTOR/ONE DIODE ARRAY Features • · · Epitaxial Planar Die Construction Ultra-Small Surface Mount Package Two 2222A NPN Transistors and One 4148 Diode SOT-363 A C1 C2 A KX1 Mechanical Data · · · · · B2 Case: SOT-363, Molded Plastic
|
Original
|
PDF
|
OT-363
OT-363,
MIL-STD-202,
300ms,
150mA
DS30215
4148 diode
CJ 4148
ic 4148
TRANSISTOR 4148
transistor 2222a
|
diode marking b2
Abstract: SDP410D
Text: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit :
|
Original
|
PDF
|
SDP410D
OD-323
KSD-C003-000
100MHz
diode marking b2
SDP410D
|
SDP410D
Abstract: No abstract text available
Text: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit : mm
|
Original
|
PDF
|
SDP410D
OD-323
KSD-C003-000
100MHz
SDP410D
|
GHB-1206L-B2
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B2 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with InGaN on SiC Light Emitting Diode.
|
Original
|
PDF
|
GHB-1206L-B2
2000PCS
DEC/05/2002
GHB-1206L-B2
|
Untitled
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE DAM2MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch 2.0 (0.08) B2 7 BN 3.6 (0.14) Type mark Lot mark Cathode band
|
Original
|
PDF
|
DO-214AA
|
LDA DIODE
Abstract: No abstract text available
Text: ar y n i im prel iC-NZN N-TYPE LASER DIODE DRIVER Rev B2, Page 1/17 FEATURES APPLICATIONS ♦ Peak value controlled laser diode driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor
|
Original
|
PDF
|
QFN24
D-55294
LDA DIODE
|
ATC 331
Abstract: c14 c13 Coilcraft capacitor c12 L98-L98 LQW18AN43NG00 PD84008L-E DB-84008L-175 EEVHB1V100P EXCELDRC35C
Text: DB-84008L-175 BOM Component ID Description B1 Ferrite Bead B2 Ferrite Bead C1, C2 Capacitor C3 Capacitor C4 Capacitor C5 Capacitor C6, C7 Capacitor C8 Capacitor C9 Capacitor C10 Capacitor C11 Capacitor C12 Capacitor C13 Capacitor C14 Capacitor D1 Zener Diode
|
Original
|
PDF
|
DB-84008L-175
PD84008L-E
EXCELDRC35C
GRM42-6C0G102J50
GRM42-6X7R104K50
EEVHB1V100P
LQW18AN43NG00
214W-1-103E
ATC 331
c14 c13
Coilcraft
capacitor c12
L98-L98
LQW18AN43NG00
PD84008L-E
EEVHB1V100P
EXCELDRC35C
|
capacitor 27pf
Abstract: Capacitor RUBYCON CAPACITOR RUBYCON CAPACITOR 120 GRM188R71H102K capacitor 22 pf GRM188R71H104KA GRM188R71H103KA capacitor 56 pF Coilcraft
Text: DB-55015-165 BOM Component ID Description B1, B2 Ferrite Bead Value D1 Zener Diode 5.1 V L1 Inductor 35.5 nH L2 Inductor L3 Inductor L4 Case size Manufacturer Part Code PANASONIC EXCELDRC35C SOD110 PHILIPS BZX284C5V1 Mini COILCRAFT B09T 17.5 nH Mini COILCRAFT
|
Original
|
PDF
|
DB-55015-165
EXCELDRC35C
OD110
BZX284C5V1
GRM42-6C0G121_
GRM188R71H102K_
PD55015
214W-1-103E
capacitor 27pf
Capacitor
RUBYCON CAPACITOR
RUBYCON CAPACITOR 120
GRM188R71H102K
capacitor 22 pf
GRM188R71H104KA
GRM188R71H103KA
capacitor 56 pF
Coilcraft
|
IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Schottky Barrier Diode BAT54BR W SOT-363 • Features Unit: mm 6 ● Fast Switching 5 4 2 3 1 B2 B1 E1 0.1max E2 +0.05 0.1-0.02 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.95-0.05 C2 0.36 +0.15 2.3-0.15 ● Designed for Surface Mount Application +0.1
|
Original
|
PDF
|
BAT54BR
|
din IEC 68
Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types
|
Original
|
PDF
|
|
|
|
capacitor
Abstract: RESISTOR POTENTIOMETER GRM188R71H102K philips zener diode c12 GRM188R71H104KA potentiometer resistor capacitor 60 pF STEVAL-TDR016V1 PD55015-E RUBYCON CAPACITOR
Text: STEVAL-TDR016V1 Component ID Description B1, B2 D1 L1 L2 L3 L4 R1 R2 R3 R4 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9 C10 C11 C13 TL1 TL2 TL3 RF in, RF out PD55015-E Board Ferrite Bead Zener Diode Inductor Inductor Inductor Inductor Resistor Potentiometer Resistor Resistor
|
Original
|
PDF
|
STEVAL-TDR016V1
PD55015-E
EXCELDRC35C
BZX284C5V1
214W-1-1e
214W-1-103E
OD110
GRM42-6C0G121_
capacitor
RESISTOR POTENTIOMETER
GRM188R71H102K
philips zener diode c12
GRM188R71H104KA
potentiometer resistor
capacitor 60 pF
RUBYCON CAPACITOR
|
GRM188R71H103K
Abstract: RUBYCON CAPACITOR GRM188R71H102K RESISTOR POTENTIOMETER philips capacitor 470 PD55015-E GRM188R7-1H103K capacitor 470 uF 220 uf 35v electrolytic capacitor tyco
Text: DB-55015-490 Component ID Description B1, B2 D1 L1 L2 L3 R1 R2 R3 R4 C1, C2 C3 C4 C5 C6, C11 C7 C8, C9 C10 TL1 TL2 TL3 TL4 TL5 RF in, RF out PD55015-E Board Ferrite Bead Zener Diode Inductor Inductor Inductor Resistor Potentiometer Resistor Resistor Capacitor
|
Original
|
PDF
|
DB-55015-490
PD55015-E
OD110
EXCELDRC35C
BZX284C5V1
1812SMS-39N_
214W-1-103E
GRM42-6C0G121_
GRM188R71H102K_
GRM188R71H103K
RUBYCON CAPACITOR
GRM188R71H102K
RESISTOR POTENTIOMETER
philips capacitor 470
PD55015-E
GRM188R7-1H103K
capacitor 470 uF
220 uf 35v electrolytic capacitor
tyco
|
IXGH16N60B2D1
Abstract: IXGP16N60B2D1
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 1.95V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B2D1
IXGH16N60B2D1
IXGP16N60B2D1
|
Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B3D1
|
G003
Abstract: G008 QFN28 pml 009 diode germany diode SMD t01 smd 3959 smd diode 44 SMD diode B2
Text: iC-NZ FAIL-SAFE LASER DIODE DRIVER Rev B2, Page 1/20 FEATURES APPLICATIONS ♦ Peak value controlled three level laser switch for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of ca. 100 mA per channel 320 mA total from 3.5 to 5 V supply voltage
|
Original
|
PDF
|
QFN28
QFN28
G003
G008
pml 009
diode germany
diode SMD t01
smd 3959
smd diode 44
SMD diode B2
|
pml 003 am
Abstract: smd diode code B2 diode SMD t01 ic pml 003 am hitachi laser diode diode b2 smd IC-NZ SMD diode B2 hitachi class 1 laser Laser Diode 10 pin
Text: iC-NZ FAIL-SAFE LASER DIODE DRIVER Rev B2, Page 1/20 FEATURES APPLICATIONS ♦ Peak value controlled three level laser switch for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of ca. 100 mA per channel 320 mA total from 3.5 to 5 V supply voltage
|
Original
|
PDF
|
QFN28
QFN28
D-55294
pml 003 am
smd diode code B2
diode SMD t01
ic pml 003 am
hitachi laser diode
diode b2 smd
IC-NZ
SMD diode B2
hitachi class 1 laser
Laser Diode 10 pin
|
IXGH16N60B2
Abstract: 16N60 IXGH16N60B2D1 C3519 16N60B IF110 IXGA16N60B2D1 IXGP16N60B2D1
Text: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IC110
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
O-263
IF110
16N60B3D1
IXGH16N60B2
16N60
IXGH16N60B2D1
C3519
16N60B
IF110
IXGA16N60B2D1
IXGP16N60B2D1
|
A2 DIODE
Abstract: DIODE 40c 0644 A5 DIODE MONOLITHIC DIODE ARRAYS marking Z4 TVS 200 diode 63-37 A4 marking diode C 12 PH diode DIODE marking A2
Text: TVS Diode Arrays TVS Avalanche Diode Array in a Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or
|
Original
|
PDF
|
SP0504BAC,
SP0508BAC,
SP0516BAC
178mm
A2 DIODE
DIODE 40c 0644
A5 DIODE
MONOLITHIC DIODE ARRAYS
marking Z4
TVS 200 diode
63-37
A4 marking diode
C 12 PH diode
DIODE marking A2
|
diode marking b2
Abstract: DIODE B2 DIODE MARKING B4 DIODE marking A2 diode MARKING b3 A2 diode A4 marking diode top side marking b2 diode array MARKING A3 esd diode a2
Text: TVS Diode Arrays TVS Avalanche Diode Array in a Bipolar Chip Scale Package SP0504BBC, SP0508BBC, SP0516BBC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or analog input circuits
|
Original
|
PDF
|
SP0504BBC,
SP0508BBC,
SP0516BBC
178mm
diode marking b2
DIODE B2
DIODE MARKING B4
DIODE marking A2
diode MARKING b3
A2 diode
A4 marking diode
top side marking b2
diode array MARKING A3
esd diode a2
|
diode B2 sm
Abstract: B2125
Text: Rectifier Diode Bridges ui V rrm V 1 > > Type Ifsm Ifavm A A V T y jm a x 60/ 52-30 Si 150 60 B2 125/110-30 Si 300 125 B2 250/225-30 Si 700 250 B2 380/340-30 Si 1100 380 outline ° C Last, load Charge: R/C 10 ms, B2 T . , max 10/9 280 BK1 175 17/15* B2 500/450-30 Si 1500 500
|
OCR Scan
|
PDF
|
|
