RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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LL5817
Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time
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C3B03
LL5817
smd ss12
DIODE SS34
LL5818
LL5819
SS13
SS14
SS15
SS16
SS19
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smd Marking OU
Abstract: B05S-G B05S smd marking NE B10S B10SG
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
smd Marking OU
B05S
smd marking NE
B10S
B10SG
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)
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B05S-G
B10S-G
125grams.
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
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Untitled
Abstract: No abstract text available
Text: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing
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B05S-G
B10S-G
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
00MAX
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Untitled
Abstract: No abstract text available
Text: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing
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B05S-G
B10S-G
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
00MAX
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general purpose bridge rectifier
Abstract: comchip rectifier bridge low smd diode bridge
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.
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B05S-HF
B10S-HF
125grams.
QW-JBR03
82MIN
55REF
92MIN
00MAX
032MIN
100REF
general purpose bridge rectifier
comchip rectifier bridge low
smd diode bridge
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B01S-G
B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
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DIODE B6S
Abstract: B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B
Text: B2S, B4S & B6S New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020C,
2002/95/EC
2002/96/EC
O-269AA
08-Apr-05
DIODE B6S
B6S Bridge rectifier
DIODE MARKING B4
TO-269AA
diode marking b2
JESD22-B102D
J-STD-002B
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diode b2s
Abstract: DIODE B6S
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
08-Apr-05
diode b2s
DIODE B6S
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DIODE B6S
Abstract: diode b2s diode marking b2 JESD22-B102 J-STD-002 B6S Bridge rectifier
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
200lectual
18-Jul-08
DIODE B6S
diode b2s
diode marking b2
JESD22-B102
J-STD-002
B6S Bridge rectifier
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Untitled
Abstract: No abstract text available
Text: B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Saves space on printed circuit boards ~ • Ideal for automated placement
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E54214
J-STD-020,
O-269AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability
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E54214
J-STD-020,
2002/95/EC
2002/96/EC
O-269AA
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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IR B25D
Abstract: B25DC
Text: International B Rectifier b2sdc/d a/ds/c s /js SCR / SCR and DIODE / SCR Power Modules in B- package 25A Features • ■ ■ ■ ■ ■ ■ ■ Glass passivated junctions for greater reliability Electrically isolated base plate 3 5 0 0 V RM S Available up to 1200 V RRM, V DRM
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B25DC/DA/DS/CS/JS
20ohm
IR B25D
B25DC
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ic 7483 BCD adder
Abstract: Multiplexer IC 7483 4 bit bcd adder using ic 7483 IC 74196 82S62 82583 adder transistor equivalent table of IC 7483 used in 4-bit binary adder IC 7483 BINARY ADDER SN29312
Text: 82S OPTIMIZED SCHOTTKY MSI Series 82S optimized Schottky MSI circuits are implemented with Schottky-barrier-Diode SBD clamping to achieve ultrahigh speed previously only attainable with em itter-coupled logic and in addition low current PNP inputs provide numerous
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82/82S
54S/74Sas
82S62
ic 7483 BCD adder
Multiplexer IC 7483
4 bit bcd adder using ic 7483
IC 74196
82S62
82583 adder
transistor equivalent table
of IC 7483 used in 4-bit binary adder
IC 7483 BINARY ADDER
SN29312
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 60KQ10B 66A/10V 5.31.209 4.71.185) FEATURES 5.71.224) 5.31.208) o Similar to TO-247AC TO-3P) Case °Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency 2.2I.087I-J 3.21.126). 0.81.031) MAX ^ • High Surge Capability
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60KQ10B
6A/10V
O-247AC
087I-J
151E3
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RUR30120
Abstract: MOSFET 1200v 30a
Text: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons
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RUR30120
110ns)
1-800-4-HARRIS
RUR30120
MOSFET 1200v 30a
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings
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50N60AU1
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER L 3E D TECHNOLOGY • 0257^ QQOimQ b2s M A VP A d v a n ced P o w er Te c h n o l o g y APT50M60JNF 500V 71A 0.060Í2 ISOTOP' S tt" U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS
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APT50M60JNF
E145592
50M60JNF
OT-227
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Untitled
Abstract: No abstract text available
Text: SbE D • T 'î E' îBa ? ÜÜ4D1GS b2S ■ SfiTH T“ * tt-Q 7 -AT / = 7 SCS THOM SON M54HC279 HOmiiLHigTOMS_ M74HC279 s G S- THOMSON _ QUAD s - R LATCH ■ HIGH SPEED tpD = 13 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 2 i iA (MAX.) at Ta = 25°C
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M54HC279
M74HC279
54/74LS279
7T2T237
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diode c743
Abstract: c743 diode
Text: PD - 5.027 International iôRjRectifier CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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CPV362MU
360Vdc,
5S452
00B0S3Ã
diode c743
c743 diode
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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