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Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
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Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
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STPSC10H065D
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
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Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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Untitled
Abstract: No abstract text available
Text: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission
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b427555
0G37b3S
NDL5102C
NDL5102C
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Abstract: No abstract text available
Text: bBE D N E C • b427525 GQ37477 77S * N E C E LASER DIODE ELECTRONICS INC / NDL5082 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL5082 is a 1 310 nm laser diode especially designed fo r optical data communications. The Mesa-type DC-PBH Double
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b427525
GQ37477
NDL5082
NDL5082
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HL-07
Abstract: NDL5009D NDL5009D1 1310 nm laser diode NEC J 302
Text: 30E D • b457SE5 005=1243 4 ■ N E C ELECTRONICS INC T~Hl-07 LASER DIODE J N D L5009D 1 310 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTIO N NDL5009D is a 1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH
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b427S25
T-Hl-07
NDL5009D
310nm
NDL5009D
NDL5009D,
NDL5009D1.
b427555
HL-07
NDL5009D1
1310 nm laser diode
NEC J 302
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Abstract: No abstract text available
Text: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a
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NDL5717P
b427SES
INIDL5717P
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Untitled
Abstract: No abstract text available
Text: 30E D • b427525 002^252 S / N EC LASER DIODE ELECTRONICS INC NDL5050A 1 550 nm O P TIC A L FIBER COM M UNICATIONS InGaAsP DOUBLE HETERO STR U C TU R E LA SER DIODE DESCRIPTION NDL5050A is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*
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b427525
NDL5050A
NDL5050A
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nec d 1590
Abstract: code diode b2e L7561 NDL7561P1 diode so3 NDL7561P
Text: N E C ELECTRONICS INC b2E D • bH27SSS □OBÏRÔS b47 INECE PRELIMINARY DATA SHEET LASER DIODE MODULE N D L7561P, NDL7561P1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION N DL7561P and NDL7561P1 are 1 550 rim new ly developed Multiple Quantum W ell MQW structure pulsed laser diode
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bH27SSS
L7561P,
NDL7561P1
DL7561P
NDL7561P1
b457525
NDL7101
NDL7111
NDL7500P
NDL7510P
nec d 1590
code diode b2e
L7561
diode so3
NDL7561P
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Untitled
Abstract: No abstract text available
Text: NEC ELECTRONICS INC fc.EE D • b427S25 D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola
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b427S25
NDL5653P
NDL5653P
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Abstract: No abstract text available
Text: N E C ELECTRONICS INC b£E ]> • b427525 003?=]^ T4Ü BINECE DATA SHEET NEC LASER DIODE MODULE NDL5776P ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5776P is a 1 550 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is
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b427525
NDL5776P
NDL5776P
NDL5061
NDL5762P
NDLS766P
NDL5765P
NDL5765P1
------------------NOL5060
NOL5070
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nec laser diode
Abstract: NEC diode NDL3210S NDL3210 TO50 package nec bar code reader NDL321QS code diode b2e
Text: N E C ELECTRONICS I NC b2E D • b427525 0037^34 TTM « N E C E DATA SHEET NEC LASER DIODE NDL321 OS ELECTRON DEVICE 6 7 0 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3210S is a small package #5.6 mm AIGalnP 670 nm visible laser diode and especially developed for Bar Code Reader.
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b427525
NDL3210S
NDL321QS
b427S25
nec laser diode
NEC diode
NDL3210S
NDL3210
TO50 package
nec bar code reader
code diode b2e
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DIODE T53
Abstract: NDL4103A b427525 NDL4103 T53 diode
Text: INECE b42?525 D037MbS TS3 L2E D LIGHT EMITTING DIODE N E C NDL4103A ELECTRONICS INC 8 5 0 nm O PTIC AL FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4103A is an AIGaAs double heterostructure light emitting diode, especially designed for a light source fo r optical fiber
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D037MbS
NDL4103A
NDL4103A
b427525
00374b?
DIODE T53
NDL4103
T53 diode
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NDL5407P
Abstract: NDL5407P1 V8580
Text: N E C ELECTRONICS INC b2E D • b427525 DD3ñDTfi 7b3 ■ NECE DATA SHEET N EC PHOTO DIODE NDL5407P, NDL5407P1 ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS #80 jam InGaAs PIN PHOTO DIODE MODULE WITH MMF NDL5407P and NDL5407P1 are InGaAs PIN photo diode modules with GI-50/125 multimode fiber pigtail. They are designed
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b427525
NDL5407P,
NDL5407P1
NDL5407P
NDL5407P1
GI-50/125
NDL5407P
L5500
V8580
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b2E ]> b4275B5 003004? 2T1 « N E C E DATA SHEET LASER DIODE NEC NDL5850D1 ELECTRON DEVICE 1 5 50 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5850D1 is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed
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b4275B5
NDL5850D1
NDL5850D1
30sec
bM2752S
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Untitled
Abstract: No abstract text available
Text: 30E D NEC • b4E? 555 OGai Sl l 7 ■ ELECTRONICS INC LA S ER DIODE / NDL5003 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL50Û3 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DCPBH Double Channel Planar Buried Heterostructure can achieve stabfe fundamental oscillation in wide temperature range.
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NDL5003
NDL50
b427S25
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
b4S752S
b427525
b427525
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FAH DIODE
Abstract: FAH diode 28
Text: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The
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b427525
L5009
1310nm
L5009
h427S2S
00ET24E
FAH DIODE
FAH diode 28
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DAD 1000
Abstract: NDL3001 2084m LC-1105 J22686 CT-510
Text: Sì 6^27525 N E C ELECTRONICS INC. DE II b427525 OOOSbD? b 59C 0 5 6 0 7 D T-41-05 LASER DIODE NDL3001 D A D ,V D A PPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION N D L3001 laser diode is developed for D A D Digital Audio Disk , Video Disk optical head and non impact laser printer. The
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b427525
T-41-05
NDL3001
NDL3001
j-41-05
Tokyo456-3111
J22686
DAD 1000
2084m
LC-1105
J22686
CT-510
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SE1003-C
Abstract: E1220 T541 SE1003C Short circuit Isolator in smoke detector
Text: N E C E L E C T R O N I C S INC 30E D • b4B75SS 002^042 4 ■ T-^l -/3 LIGHT EMITTING DIODE S E 1 0 0 3 -C GaAIAs on GaAs INFRARED EMITTING DIODE DESCRIPTION The SE1003-C is a GaAIAs on GaAs Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On
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b4B752S
SE1003-C
SE1003-C
E1220
T541
SE1003C
Short circuit Isolator in smoke detector
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diode 1310 fiber
Abstract: NDL5004P NDL5004
Text: 3QE D • b45755S OQSTSaB 1 ■ T-*fr I N E C ELECTRONICS INC / LASER DIODE NDL5004P 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE MODULE D E S C R IP T IO N N D L 5 0 0 4 P is an InGaAsP Laser Diode M odule especially designed fo r long distance high capacity transmission systems. The
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b4S755S
NDL5004P
NDL5004P
N0L5100)
bH27S25
diode 1310 fiber
NDL5004
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