RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD B540C DIODE 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER + DESCRIPTION The UTC B540C is a schottky barrier rectifier; It provides the customers high efficiency and low power loss. The UTC B540C is suitable for automatic assembly high frequency
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B540C
B540C
B540CL-SMC-R
B540CG-SMC-R
QW-R601-071
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B540C
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD B540C Advance DIODE 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER + DESCRIPTION The UTC B540C is a schottky barrier rectifier; It provides the customers high efficiency and low power loss. The UTC B540C is suitable for automatic assembly high frequency
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B540C
B540C
B540CL-SMC-R
B540CG-SMC-R
B540CL-SMC-R
QW-R601-071
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD B540C Advance DIODE 5 A SU RFACE M OU N T SCH OT T K Y BARRI ER RECT I FI ER + ̈ DESCRI PT I ON The UTC B540C is a schottky barrier rectifier; It provides the customers high efficiency and low power loss. The UTC B540C is suitable for automatic assembly high frequency
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B540C
B540C
B540CL-SMC-R
B540CG-SMC-R
QW-R601-071
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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Untitled
Abstract: No abstract text available
Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3G,
NRVBS540T3G
MBRS540T3
MBRS540T3/D
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B540A
Abstract: NRVBS540 MBRS540T3G B540 diode B540-G MBRS540T3G marking code
Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3G,
NRVBS540T3G
MBRS540T3
MBRS540T3/D
B540A
NRVBS540
MBRS540T3G
B540 diode
B540-G
MBRS540T3G marking code
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Untitled
Abstract: No abstract text available
Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3G,
NRVBS540T3G
MBRS540T3
MBRS540T3/D
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Untitled
Abstract: No abstract text available
Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3G,
NRVBS540T3G
MBRS540T3
MBRS540T3/D
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B540 diode
Abstract: on B540
Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3
MBRS540T3
B540 diode
on B540
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MBRS540T3
Abstract: B540G B540 MBRS540T3G SMC 403-03 B540 diode SMC case 403
Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3
MBRS540T3
B540G
B540
MBRS540T3G
SMC 403-03
B540 diode
SMC case 403
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on B540
Abstract: B540 diode B540 MBRS540T3G MBRS540T3 diode b540
Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3
MBRS540T3
MBRS540T3/D
on B540
B540 diode
B540
MBRS540T3G
diode b540
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B540G
Abstract: B540 MBRS540T3 MBRS540T3G
Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3
MBRS540T3
MBRS540T3/D
B540G
B540
MBRS540T3G
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Untitled
Abstract: No abstract text available
Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRS540T3
MBRS540T3
MBRS540T3/D
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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B340A-13-F
Abstract: B350B-13-F B340B-13-F B530C-13-F B230A-13-F diode S1J mark S1G R2 diode s1m sma B190 B340B-13
Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: July 15, 2005 July 15, 2004 Alert Category: Discrete Semiconductor DCS/PCN-1042 Alert Type: PCN #: Assembly & Test Site DCS/PCN-1042 TITLE Qualification of Assembly and Test Site for Schottky and Standard Recovery GP Rectifier Diode
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DCS/PCN-1042
B350B-13
B350B-13-F
B360-13
B360-13-F
B360A-13
B360A-13-F
B360B-13
B360B-13-F
B340A-13-F
B350B-13-F
B340B-13-F
B530C-13-F
B230A-13-F
diode S1J mark
S1G R2
diode s1m sma
B190
B340B-13
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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Untitled
Abstract: No abstract text available
Text: B520C - B560C Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B520C/B530C/B540C • Guard Ring Die Construction for Transient Protection VRRM V IO (A) VF max (V) IR max (mA) • Ideally Suited for Automated Assembly
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B520C
B560C
B520C/B530C/B540C
B550C/B560C
AEC-Q101
DS13012
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LT3976H
Abstract: LT3976IMSE#PBF LT3976EMSE
Text: Electrical Specifications Subject to Change LT3976 40V, 5A, 2MHz Step-Down Switching Regulator with 3.3µA Quiescent Current FEATURES n n n n n n n n n n n n n n n DESCRIPTION Ultralow Quiescent Current: 3.3 A IQ at 12VIN to 3.3VOUT Low Ripple Burst Mode Operation
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LT3976
500mV
DFN-10,
MSOP-10E
DFN-16,
MSOP-16E
LT3976H
LT3976IMSE#PBF
LT3976EMSE
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Untitled
Abstract: No abstract text available
Text: Electrical Specifications Subject to Change LT3976 40V, 5A, 2MHz Step-Down Switching Regulator with 3.3µA Quiescent Current FEATURES n n n n n n n n n n n n n n n DESCRIPTION Ultralow Quiescent Current: 3.3 A IQ at 12VIN to 3.3VOUT Low Ripple Burst Mode Operation
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LT3976
12VIN
15mVP-P
200kHz
250kHz
700nA
DFN-10,
MSOP-10E
LT3970
350mA
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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