B60C-806-01
Abstract: bookham diode 60W
Text: Data sheet 60W 806nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 60W operating power B60C-806-01 • Highly reliable single quantum well MBE structure The Bookham Technology B60C-806-01 bare laser diode bar series has been designed to provide the
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806nm
B60C-806-01
B60C-806-01
21CFR
bookham diode 60W
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C1060
Abstract: bookham diode 2 Wavelength Laser Diode C1060 Series b60c Nd-yag B60C-1060-01 emitter "1060 nm"
Text: Data Sheet Preliminary 60W 10xxnm High Power Bare Laser Diode Bar B60C-10xx-01 The Bookham B60C-10xx-01 50% fill factor laser diode bar has been designed to provide the increased brightness and reliability required for direct diode applications and as replacement for Nd:YAG lasers. The proprietary E2 front mirror
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10xxnm
B60C-10xx-01
B60C-10xx-01
1060nm
900-1060nm
21CFR
BH13574
C1060
bookham diode
2 Wavelength Laser Diode
C1060 Series
b60c
Nd-yag
B60C-1060-01
emitter "1060 nm"
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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HFA08TB60S
Abstract: IRFP250 Ultrafast Recovery diode 18ns
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
HFA08T
IRFP250
Ultrafast Recovery diode 18ns
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HFA08TB60S
Abstract: IRFP250
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
12-Mar-07
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
08-Mar-07
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diode marking 515
Abstract: CT28 Q62702-B607 DIODE Q marking
Text: Silicon Variable Capacitance Diode ● For UHF and VHF TV/VTR tuners ● Large capacitance ratio ● Low series resistance BB 515 Type Ordering Code tape and reel Pin Configuration 1 2 Marking Package BB 515 Q62702-B607 C white S SOD-123 A Maximum Ratings
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Q62702-B607
OD-123
diode marking 515
CT28
Q62702-B607
DIODE Q marking
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k 2996
Abstract: LTC1077 D2996 LTC2997 LTC2996IDD power supply 220v- 12v circuit diagram ut 0712 B6015L
Text: LTC2996 Temperature Sensor with Alert Outputs Features Description Converts Remote or Internal Diode Temperature to Analog Voltage n Adjustable Overtemperature and Undertemperature Thresholds n Voltage Output Proportional to Temperature n ±1°C Remote Temperature Accuracy
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LTC2996
10-Lead
LTC2997
LTC1077
2996f
k 2996
LTC1077
D2996
LTC2996IDD
power supply 220v- 12v circuit diagram
ut 0712
B6015L
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Untitled
Abstract: No abstract text available
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —
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MBRP60035CTL
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Untitled
Abstract: No abstract text available
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —
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MBRP60035CTL
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LTC2997
Abstract: fairchild marking codes sot-23 UMT3904 ta 1013a ROHM 1004 B6015L12F CMPT3904 LTC2997C LTC2997CDCB LTC2997H
Text: LTC2997 Remote/Internal Temperature Sensor Features Description Converts Remote Sensor or Internal Diode Temperature to Analog Voltage n ±1°C Remote Temperature Accuracy n ±1.5°C Internal Temperature Accuracy n Built-In Series Resistance Cancellation n 2.5V to 5.5V Supply Voltage
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LTC2997
LTC2997
LTC6078
LTC6078
LTC6079
2997f
fairchild marking codes sot-23
UMT3904
ta 1013a
ROHM 1004
B6015L12F
CMPT3904
LTC2997C
LTC2997CDCB
LTC2997H
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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MBRP60035CTL
Abstract: No abstract text available
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
r14525
MBRP60035CTL/D
MBRP60035CTL
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Untitled
Abstract: No abstract text available
Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
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PD-96033
HFA15TB60SPbF
HFA15TB60S
08-Mar-07
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B60S
Abstract: HFA04TB60S IRFP250
Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC
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PD-96035
HFA04TB60SPbF
HFA04TB60S
HFA04T
B60S
IRFP250
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B60S
Abstract: HFA04TB60S IRFP250 94036
Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC
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PD-96035
HFA04TB60SPbF
HFA04TB60S
12-Mar-07
B60S
IRFP250
94036
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Untitled
Abstract: No abstract text available
Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC
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PD-96035
HFA04TB60SPbF
HFA04TB60S
08-Mar-07
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HFA15TB60S
Abstract: IRFP250
Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
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PD-96033
HFA15TB60SPbF
HFA15TB60S
12-Mar-07
IRFP250
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HFA25TB60S
Abstract: IRFP250
Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC
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PD-96039
HFA25TB60SPbF
112nC
HFA25TB60S
12-Mar-07
IRFP250
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S 187 Siemens
Abstract: MARKING CODE 515 diode marking 515 DIODE T28
Text: SIEMENS Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking Package white S SOD-123 Maximum Ratings
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OCR Scan
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Q62702-B607
OD-123
S 187 Siemens
MARKING CODE 515
diode marking 515
DIODE T28
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Untitled
Abstract: No abstract text available
Text: SIEM ENS • û2 3S bDS 000^434 'îflO Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking
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Q62702-B607
OD-123
EHD07042
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Diode B60
Abstract: an8523S AN8523 DN6851 A b5 diode AN85-23 dn8899u
Text: Bipolar Digital ICs • Driver Arrays -Input Resistor 0 Function Type No. Output Breakdown Voltage VcE(SUS) Output Current (mA) Output Clamp Diode Numbers of Circuits Package No. (V) DN8650 "L ” input active driver (Emitter common) USTTL Compatible
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DIP016-P-0300D
HZIP023-P-0138
DN8650
DN8690
DN8695
ADN8796/MS
DN8797/MS
ADN8798/MS
ADN8799/MS
Diode B60
an8523S
AN8523
DN6851 A
b5 diode
AN85-23
dn8899u
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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