zener diode RD2.2S
Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ
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RD10UJ
RD11UJ
RD12UJ
RD13UJ
RD15UJ
RD16UJ
RD18UJ
RD20UJ
RD22UJ
RD24UJ
zener diode RD2.2S
RD2.0HS
rd2.2m
nec 10f
RD16MW
str 450 a
RD4.3HS
NEC Zener diode RD3.0M
RD3.0HS
RD51P
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varactor diode AM
Abstract: SVC347 En58
Text: Ordering number : EN5816 Silicon Diffused Junction Type SVC347 Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • Twin type varactor diode for AM electronic tuning use. unit: mm • Miniaturization and high-integration of tuner sets can be
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EN5816
SVC347
SVC347]
varactor diode AM
SVC347
En58
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Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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B-408 diode
Abstract: MIL-STD-883 method 3015 15kV
Text: PRELIMINARY CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CSPESD304
CSPESD304
MIL-STD-883
178mm
B-408 diode
MIL-STD-883 method 3015 15kV
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smd diode 74a
Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Text: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation
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IEC1000-4-2
D11663EJ4V0PF00
smd diode 74a
uPD72011
SC-76
SC-78
smd diode 2d
smd diode 6D
smd lg diode
PD7201
SC5915
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TC1617
Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TCM1617
TCM1617
TCM1617-1
DS21485A
TC1617
TCM1617MQR
200B
TCM1617EV
TCN75
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200B
Abstract: TC1068 TC1068MQR TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TC1068
TC1068
TC1068-1
DS21352A
200B
TC1068MQR
TCM1617EV
TCN75
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bosch voltage suppressor
Abstract: PFB5022
Text: PFB5022 THRU PFB5039 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 50A Features 50Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175
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PFB5022
PFB5039
50Amp
PFB5025
100mA
WIDTH-300
bosch voltage suppressor
PFB5022
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Untitled
Abstract: No abstract text available
Text: PFB3522 THRU PFB3539 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175
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PFB3522
PFB3539
35Amp
PFB3525
100mA
WIDTH-300
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Untitled
Abstract: No abstract text available
Text: PFBM3522 THRU PFBM3539 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175
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PFBM3522
PFBM3539
35Amp
PFBM3525
100mA
WIDTH-300
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Untitled
Abstract: No abstract text available
Text: BOS058 Series Reflective Object Sensor Description The BOS058 reflective object sensor consists of an infrared emitting diode and an NPN silicon phototransistor in an black plastic housing. The unit is suitable for the detection of paper or and object over a range
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BOS058
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Untitled
Abstract: No abstract text available
Text: BD3520, BD3524, BD3536 35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data
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BD3520,
BD3524,
BD3536
200nA
BD3520R
BD3524R)
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SLD323
Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
600mVV
-101C
SLD323
808 nm 100 mw
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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BOSCH diode
Abstract: bosch 25 amp diode press-fit diode Diode pressfit 5 amp diode diode, 305 BOSCH 0 2 Diode press-fit
Text: RENARD MANUFACTURING 47E CO D 7b71057 QOOOlbl DIODES b'ìS H R E N - \ - 19 1/2" Press-Fit Hermetically Sealed Diodes for BOSCH #7990 Pos. 1/2" original Bosch type, press-fit diode, 200 volt, 35 amp, 1 milliamp with long flexible lead #7991 Neg. 1/2" original Bosch type, press-fit diode, 200 volt,
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7b71057
BOSCH diode
bosch
25 amp diode
press-fit diode
Diode pressfit
5 amp diode
diode, 305
BOSCH 0 2
Diode press-fit
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SLD301V-21
Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
Text: SLD301V SONY lO O m W High Power Laser Diode Description Package O utline U nit: mm SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current
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SLD301V
SLD301V
SLD301V-21
SLD301
SLD301V-2
SLD301V-3
1R1H
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Untitled
Abstract: No abstract text available
Text: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA1512P/PI
STTA1512P
STTA1512PI
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Untitled
Abstract: No abstract text available
Text: STTA2512P TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V trr (typ) 60ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA2512P
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Untitled
Abstract: No abstract text available
Text: STTA812D/DI/G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 1200V trr (typ) 50ns Vf 2.0V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA812D/DI/G
STTA812DI
STTA812D
STTA812G
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PO200
Abstract: SLD302WT SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3 180MW
Text: SLD302WT SONY 200mW High Power Laser Diode Description Unit: mm Packa g e Outline SLD 302W T is a gain-guided, high-power laser diode with a built-in T E cooler. Fine tuning of the wavelength is possible by controlling the laser chip temperature. F e a tu re s
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SLD302WT
200mW
SLD302WT
180mW
PO200
SLD302WT-1
SLD302WT-2
SLD302WT-21
SLD302WT-3
180MW
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Switching Diode Array B A V 74 • For high-speed switching • Common cathode Typ e Marking Ordering Code tape and reel B A V 74 JAs Q62702-A693 Pin Configuration Package1* 3 SOT-23 EH-I- K l ° EHA07004 Maximum Ratings per Diode Parameter
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Q62702-A693
OT-23
EHA07004
23SbD5
BAV74
EH80007!
fl235LQ5
Q120404
235LI3S
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TMBYV10-20
Abstract: diode B05
Text: {Z T S G S -T H O M S O N * 7#. fflD tg œ iL IM O iO lg i T M B Y V 10-2 0 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode
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0-20A
300ms
TMBYV10-20
diode B05
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Untitled
Abstract: No abstract text available
Text: SLD302B SONY. Block-type 200mW High Power Laser Diode Description Package Outline U nit : mm SLD 302B is a high power laser diode m ounted on a 3 x 3 x 5mm Copper block. It is ideal fo r a pp lica tio ns w h ich require a m inim al distance between the laser fa ce t and
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200mW
SLD302B
--12C
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MPN7380
Abstract: No abstract text available
Text: METELICS CORP 25E D bOS13S5 QOGDlbfl b •'T'-07- S PIN DIODE CHIPS HIGH POWER SWITCH & ATTENUATOR metelics CORPORATION FEATURES • High Voltage Breakdown to 800 Volts • Glass Passivation • Low Rs, Cj Mesa Construction MAXIMUM RATINGS Power Dissipation
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bOS13S5
175oc
DAE-100B.
MPN-7453C
MPN-7453B
MPN-7453A
MPN--7380
MPN--7330
MPN7380
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Untitled
Abstract: No abstract text available
Text: Twin Diode Module TDM150 D im . V Baseplate A=Common Anode ¥ Boseplate Common Cathode -W -o o-W- Baseplate D=Doubler Notes: Baseplate: Nickel plated copper, common cathode Microsemi Catalog Number Working Peak Reverse Voltage Repetitive Peak Reverse Voltage
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TDM150
TDM15002+
TDM15004*
TDM15006Â
TDM15008*
TDM15010*
M15012*
000347T
34flO
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