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Abstract: No abstract text available
Text: BY 1600.BY 2000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A
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Abstract: No abstract text available
Text: BY 1600.BY 2000 *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$'
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diode BY 1600 rectifier
Abstract: diode 1600 rectifier
Text: BY 1600.BY 2000 *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$'
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Abstract: No abstract text available
Text: BY 1600.BY 2000 *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$'
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Untitled
Abstract: No abstract text available
Text: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
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9V bridge rectifier ic
Abstract: 60-16NO1 ixys vub 70 -16
Text: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
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siemens igbt
Abstract: dc43a
Text: VUB 71 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 71-12 NO1 VUB 71-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
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51-12NO1
Abstract: vub 70
Text: VUB 51 VRRM = 1200-1600 V IdAV = 51 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM 1 2 Type 4 5 V VUB 51-12 NO1 VUB 51-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
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DMA150E1600NA
Abstract: DMA-150 DIN7985 din 7985
Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number DMA 150 E 1600 NA 1 3 2 4 Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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OT-227B
60747and
DMA150E1600NA
DMA-150
DIN7985
din 7985
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DMA150E1600NA
Abstract: No abstract text available
Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated
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OT-227B
160LLIMETERS
60747and
DMA150E1600NA
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skt 450
Abstract: semikron thyristor skt 16 diode skn 5/ 08 semikron Semikron SKN 12 /16 diode zg 21 SKR TABL 3,5 QU Semikron SKR 40 /12 TABL14 SKT-GSW semikron skt 600
Text: Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips Types 3 VRRM 100 4) SKN SKR
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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full bridge igbt induction heating generator
Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets
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vub 70 -16
Abstract: VUB160 120-16NO1 VUB 120 ixys vub 70 -16 F3-10 160-12NO1 9V bridge rectifier ic three phase half controlled rectifier VUB60
Text: 3~ Rectifier Bridges with Brake Unit Contents 2 3 Page 1600 1200 A 1 VRRM/VDRM V Type 1400 IdAV Rectifier Bridges Circuit configuration 12 14 16 1 51 ● ● VUB 51-.NO1 F3 - 2 2 59 ● ● VUB 60-.NO1 F3 - 4 2 59 ● ● VUB 71-.NO1 F3 - 8 3 120 ●
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F3-10
F3-14
vub 70 -16
VUB160
120-16NO1
VUB 120
ixys vub 70 -16
F3-10
160-12NO1
9V bridge rectifier ic
three phase half controlled rectifier
VUB60
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Untitled
Abstract: No abstract text available
Text: DSI45-16A final for release V RRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 45 A 1.23 V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations
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DSI45-16A
O-247
sine180Â
DSI45
60747and
20090529a
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GTO hvdc thyristor
Abstract: welding rectifier circuit board thyristor ltt 1590A single phase fully controlled rectifier scr control circuit for welding disc thyristor IGCT high single phase bridge rectifier pin configuration single phase bridge fully controlled rectifier
Text: Product Information Main Features Thyristors & Diodes • ■ ■ ■ BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up to several giga watts. Besides the standard phase thyristors and rectifier diodes, our
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Untitled
Abstract: No abstract text available
Text: DSP45-16A VRRM = 1600 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations
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DSP45-16A
O-247
sine180Â
60747and
20090528a
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welding rectifier circuit board
Abstract: GTO hvdc thyristor SCR GTO three phase fully controlled rectifier scr control circuit for welding single phase fully controlled rectifier TT 2240 TDB6HK IGCT thyristor tt 330
Text: Product Information May 2006 Overview Bridge Rectifier, AC-Switches Product Information May 2006 Thyristors & Diodes 3000 VRRM[V] 2000 BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up
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DSP45-12A
Abstract: DSP45-16A DSP45-16AR ISOPLUS247
Text: DSP45-16A VRRM = 1600 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 DSP45-16A Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSP45-16A
O-247
sine180°
60747and
20090528a
DSP45-12A
DSP45-16A
DSP45-16AR
ISOPLUS247
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80EPS16
Abstract: No abstract text available
Text: 80EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY VF at 80 A 1.17 V IFSM 1450 A VRRM 1600 V The 80EPS16 rectifier High Voltage Series has been
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80EPS16
O-247AC
18-Jul-08
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80EPS16
Abstract: No abstract text available
Text: 80EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY VF at 80 A 1.17 V IFSM 1450 A VRRM 1600 V The 80EPS16 rectifier High Voltage Series has been
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80EPS16
O-247AC
18-Jul-08
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diode SKN molybdenum
Abstract: No abstract text available
Text: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3
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GMCL03
GMCL04
CD47E405
GMCL06
fll3bb71
diode SKN molybdenum
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thyristor MTT 25 N 14
Abstract: E72873 13-14N02 ls 7472 25-16N02 vuo 35-12n07 36-16io1 VHF15-16 50-04N03 mtt 95 a 12 n
Text: e I Rectifier Bridges, 1~ ki L-n — —N— Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V *BMS 'd *v @ T c Type *F3U 45°C 10 ms A Vto rF ^VJM V »c K/W 85 220 0.85 m il 17 150 5.6 K/W 0.4 § E 72 873 (M) > New V VBO 13-16N02 • VBO 13-14N02 VBO 13-12N02
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13-16N02
13-14N02
13-12N02
13-08N02
13-16A02
13-14A02
13-12A02
20-16N02
20-14N02
20-12N02
thyristor MTT 25 N 14
E72873
ls 7472
25-16N02
vuo 35-12n07
36-16io1
VHF15-16
50-04N03
mtt 95 a 12 n
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BYD11
Abstract: BYD11D sod91 Philips 037 philips 037 01 ScansUX40
Text: 5bE D vnoaati GD40S37 o n m p h in BYD11 SERIES PHILIPS INTERNATIONAL SbE » CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID * envelope, intended for general purpose rectifier applications.
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711002h
GD40S37
BYD11
OD-91
BYD11D
7110flÂ
7Z242S2.
sod91
Philips 037
philips 037 01
ScansUX40
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