Diode BYW 56
Abstract: diodes byw
Text: BYW 27-50.BYW 27-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9
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Untitled
Abstract: No abstract text available
Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 '
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Untitled
Abstract: No abstract text available
Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 '
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diodes byw
Abstract: diode BYW
Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 '
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Diode BYW 56
Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Text: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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diode BYW 66
Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY
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BYW80150A
Q00S2M5
diode BYW 66
diode P2F
DIODE DO-220
high efficiency fast recovery diode byw
BYW 90
diode BYW 85
BYW 26
8050 2D C
diode BYW
diode BYW 60
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marking 3t1
Abstract: BYW54 88034 BYW55 BYW56
Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • b b S B 'm QGBbb? 5ET ■ APX BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES D ouble-diffused glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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bbS3131
0GBbb77
BYW54
OD-57.
BYW55
BYW56
7Z88032
marking 3t1
88034
BYW56
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diode byw 81 200
Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY
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Iat100Â
diode byw 81 200
Diode BYW 59
Diode BYW 56
diode BYW 66
Q002
ANTENA
8150 diode
diode BYW
diode BYW 81
diode P2F
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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N5625
Abstract: diodes byw N5624 diodes byw 88 600 r
Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
N5625
D-74025
24-Jun-98
diodes byw
N5624
diodes byw 88 600 r
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N5062
Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
N5059
N5060
N5061
N5062
D-74025
24-Jun-98
N5062
Diode BYW 56
TELEFUNKEN BYW-56
N-5061
diodes byw
diodes byw 88 600 r
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IN5059
Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Text: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
IN5059
BYW53
1N5060
BYW55
1N5062
1n5062 equivalent
diodes byw
Diode BYW 56
BYW 52
BYW 200
1N5060 diode
BYW 54
byw 56 equivalent
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diodes byw
Abstract: No abstract text available
Text: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:
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BYW82.
BYW86
1N5624
1N5625
12-Dec-94
diodes byw
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diode BYW 64
Abstract: No abstract text available
Text: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
1N5625
diode BYW 64
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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T0247
Abstract: BYW99P-200 BYW99PI-200 BYW99W-200
Text: S G S - T H O M S O N M M E L E @ ÌT [^ G M © i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES P R E L IM IN A R Y D A T A S H E E T FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES
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BYW99P/PI/W
T0247
BYW99P-200
BYW99PI-200
T0247
BYW99W-200
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T0247
Abstract: T0247 package BYW99P-200 BYW99PI-200 BYW99W-200 BYW99W200 1MH7 33ili
Text: S G S -T H O M S O N M M ELE@ ÌT[^ GM ©i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES PR ELIM IN A R Y DATASHEET FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY
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BYW99P/PI/W
T0247
BYW99P-200
BYW99PI-200
T0247
BYW99W-200
T0247 package
BYW99P-200
BYW99PI-200
BYW99W-200
BYW99W200
1MH7
33ili
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BYW29E-100
Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
Text: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast
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BYW29E-100/150/200
T0220AB
711002b
00242GÃ
T0220AC;
T0220
BYW29E-100
T0220AB
byw29e
to3 HEATSINK
BYW29E100
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LR8C
Abstract: BYW29 T0220AB BYW29 diode rectifier
Text: PHILIPS INTERNATIONAL « E , B 7ll062b 0021 S03 T m p m H T~Q3~ 7 D ata sh eet sta tu s Preliminary specification date of issu e February 1991 GENERAL DESCRIPTION G la ss passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low
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711DfiSb
T0220AB
BYW29E-100/150/200
T0220AC;
T0220
LR8C
BYW29
T0220AB
BYW29 diode rectifier
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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diode BYW 64
Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Text: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62
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B250C5000/3300
F/250V
3nF/250V
F/400V
47nF/400V
F/50V
F/63V
F/100V
diode BYW 64
B81121 X2 mkt
TDB7812T
B81121
B32530
1nf 100v mkt
100v mkt
b81121 x2
7812T
B41822
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