diode piv 10
Abstract: DIODE 35 S439IE
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000 30 18
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25deg
100deg
S439IE
diode piv 10
DIODE 35
S439IE
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ultra low forward voltage schottky diode
Abstract: No abstract text available
Text: CTLSH01-30 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Ultra Tiny
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CTLSH01-30
CTLSH01-30
20-April
ultra low forward voltage schottky diode
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Untitled
Abstract: No abstract text available
Text: CFSH01-30 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and low leakage current are prime requirements. Packaged in a Tiny Leadless
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CFSH01-30
CFSH01-30
OD-882L
100mA)
30nAmA
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Untitled
Abstract: No abstract text available
Text: CTLSH01-30 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Ultra Tiny
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CTLSH01-30
CTLSH01-30
100mA)
20-April
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Untitled
Abstract: No abstract text available
Text: AlGaInP Red Laser Diode ADL-63V01CZ DATE：2007/07/18 Ver 1.0 o ★635nm 0.5W 30 C C-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime 4. Narrow spectral line-width 5. High polarization purity Diode laser chip • Applications 1. Laser display
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ADL-63V01CZ
635nm
divers-vis/ari/635nm/
adl-63v01cz
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peltier cooler
Abstract: Peltier module 58520 L8413 808nm source photonics LLD1007E02 817 diode CW laser diode
Text: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. RELATIVE RADIANT OUTPUT POWER (%) Top(c) = 20 °C 20 10 10 30 20 FORWARD CURRENT If (A) PRELIMINARY DATA
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L8413
SE-171-41
LLD1007E02
peltier cooler
Peltier module
58520
L8413
808nm
source photonics
LLD1007E02
817 diode
CW laser diode
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Heavy Twin Tower
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRA80030CTL LOW VF SCHOTTKY DIODE MODULE TYPE 800A Features 800Amp Rectifier 30 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number
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MBRA80030CTL
800Amp
Heavy Twin Tower
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Heavy Twin Tower
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRA40030CTL LOW VF SCHOTTKY DIODE MODULE TYPE 400A Features 400Amp Rectifier 30 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number
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MBRA40030CTL
400Amp
Heavy Twin Tower
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Untitled
Abstract: No abstract text available
Text: ADL-63V05CZ AlGaInP Red Laser Diode ★635nm 0.5W 30 oC C-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity 6. Small aspect ratio
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ADL-63V05CZ
635nm
divers-vis/ari/635nm/
adl-63v05cz
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Untitled
Abstract: No abstract text available
Text: ADL-65053TL-2 AlGaInP Visible Laser Diode DATE：2006/6/30 Ver 1.0 o ★650nm 5mW 70 C Reliable Operation • Features 1. High temperature operation 2. FFP single lateral mode 3. High reliability 4. Excellent far field pattern. • Applications 1. Laser pointers
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ADL-65053TL-2
650nm
ari/655nm/
adl-65053tl-2
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Untitled
Abstract: No abstract text available
Text: niXYS DSEP 30-04 HiPerFRED Epitaxial Diode Ì fav with soft recovery V rrM trr v” r s m V RR« V V 400 400 30 A 400 V 30 ns TO-247AD Type DSEP 3 0 - 0 4 A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A
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O-247AD
D98004E
D-68623
0DD4733
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ixys 047
Abstract: No abstract text available
Text: □IXYS Advanced Technical Data Power Schottky Rectifier DSSK 30 iFAV = 2x15 A V RRM = 35 - 45 V TO-247 AD W- T M V RSM V RRM V V 35 45 35 45 Type C TAB DSSK 30-0035B DSSK 30-0045B A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings (per diode)
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30-0035B
30-0045B
O-247
D-68623
ixys 047
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250A darlington transistor
Abstract: FCD880 FCD885 FCD890 ILD74 MCT66 16 pin DIP socket
Text: 1-24 Coupled Characteristics Max Ratings @ T a = 25°C Transistor >C VCEO mA V Vr V lF mA Diode v iso kV Min Current Transfer Ratio •C^F @V ;e % mA V Output Pd mW FCD880 Trans 400 30 30 3.0 60 FCD885 Trans 400 30 30 3.0 60 2.5 10 10 10 FCD890 Darlg 400 30
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FCD880
FCD885
FCD890
ILD74
MCT66
250A darlington transistor
16 pin DIP socket
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FCD880
Abstract: FDC880 FCD885 FCD890 ILD74 MCT66
Text: 1-24 Coupled Characteristics Max Ratings @ T a = 25°C Transistor >C VCEO mA V Vr V lF mA Diode v iso kV Min Current Transfer Ratio •C^F @V ;e % mA V Output Pd mW FCD880 Trans 400 30 30 3.0 60 FCD885 Trans 400 30 30 3.0 60 2.5 10 10 10 FCD890 Darlg 400 30
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FCD880
FCD885
FCD890
ILD74
MCT66
FDC880
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TIL111 equivalent
Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
Text: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
TIL113
TIL119
TIL111 equivalent
TIL119 equivalent
TIL112 equivalent
TIL112
TIL119
MCT2E equivalent
TIL 143
TIL113
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PH302B
Abstract: rtk 32 B427 pcb diagram ethanol
Text: N E C ELECTRONICS INC 3QE D • b42752S ODSTbGB ñ ■ T - ty - S 3 / 1 PHOTO DIODE /_ PH 302B P L A S T IC M O LD E D P IN PHOTO D IO D E D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit: mm P H 30 2B is a photo diode with P IN structure. It has a wide
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b427525
PH302B
PH302B
rtk 32
B427
pcb diagram ethanol
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current
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bb53c
00Ebl41
BA221
DO-35
bb53T31
QD2bl44
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L I D STATE 01 E D 19830 Optoelectronic Specifications _ V 7 HARRI S SEMICOND SECTOR 3 7E » Ml 4305571 Photon Coupled Isolator C N Y 30-C N Y 34 Ga As Infrared Emitting Diode & Light Activated SCR T he G E Solid S tate CNY30 and C NY34 consist o f a gallium arsenide,
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CNY30
S-429S
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Text: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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FCD836Â
FCD836DÂ
FCD850
FCD850C
FCD850D
FCD850C,
FCD855C
FCD850D,
FCD855D
FCD836
FCD836D
FCD855
FCD860
FCD865
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1431 transistor equivalent
Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
MCA20
1431 transistor equivalent
MCA255
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Untitled
Abstract: No abstract text available
Text: Si4812DY VISHAY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) 30 r DS(ON) (& ) I d (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 S C H O TTK Y PRODUCT SUM M ARY VSD (V) VDS (V)
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Si4812DY
S2SM735
DD17flflT
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H11A1
Abstract: H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 MCT26
Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
MCA230,
MCA255
MCA255
MCT26
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TIL112
Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
H11D1,
H11D2,
TIL112
MCA255
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TIL112
Abstract: Phototransistor til 81 OF til 81 TIL115 TIL 143 TIL 115 H11A1 H11A2 H11B1 H11D2
Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
TIL112,
TIL115
TIL112
Phototransistor til 81
OF til 81
TIL 143
TIL 115
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