VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
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VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
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BAW56U
Abstract: SC74
Text: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration
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PDF
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BAW56U
VPW09197
EHA07288
Jun-29-2001
EHB00093
EHB00090
BAW56U
SC74
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6A1 diode
Abstract: BAW56S VPS05604
Text: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s
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PDF
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VPS05604
EHA07288
OT-363
Oct-08-1999
EHB00093
EHB00090
6A1 diode
BAW56S
VPS05604
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BAV70U
Abstract: SC74 10325v
Text: BAV70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration
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PDF
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BAV70U
VPW09197
EHA07182
Jul-06-2001
EHB00068
EHB00065
BAV70U
SC74
10325v
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BAW56S
Abstract: 6A1 diode VPS05604
Text: BAW56S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Common anode Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration
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PDF
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BAW56S
VPS05604
EHA07288
OT363
Jul-05-2001
EHB00093
EHB00090
BAW56S
6A1 diode
VPS05604
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6A1 diode
Abstract: 7006S VPS05604
Text: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking
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PDF
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70-06S
VPS05604
EHA07288
OT-363
EHB00042
EHB00043
EHB00044
EHB00045
Oct-07-1999
6A1 diode
7006S
VPS05604
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EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
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PDF
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VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
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Untitled
Abstract: No abstract text available
Text: BAV 70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration
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Original
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PDF
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VPW09197
EHA07182
SC-74
Oct-07-1999
EHB00068
EHB00065
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6A1 diode
Abstract: No abstract text available
Text: BAW 56U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Common anode Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration
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Original
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PDF
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VPW09197
EHA07288
SC-74
Oct-08-1999
EHB00093
EHB00090
6A1 diode
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6A1 diode
Abstract: BAS70-06S VPS05604
Text: BAS70-06S Silicon Schottky Diode Array 4 General-purpose diode for high-speed switching 5 6 Circuit protection Voltage clamping High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S
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PDF
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BAS70-06S
VPS05604
EHA07288
OT363
EHB00042
EHB00043
EHB00044
EHB00045
Jul-06-2001
6A1 diode
BAS70-06S
VPS05604
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
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BAV99T
Abstract: SC75
Text: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99T
VPS05996
EHA07181
Jun-29-2001
EHB00078
EHB00075
BAV99T
SC75
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bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
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Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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PDF
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BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
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BAV99S
Abstract: VPS05604
Text: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s
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PDF
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BAV99S
VPS05604
EHA07287
OT363
Jun-29-2001
EHB00078
EHB00075
BAV99S
VPS05604
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Pin diode G4S
Abstract: VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
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3-04W
3-05W
3-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
Pin diode G4S
VSO05561
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BAV99U
Abstract: SC74
Text: BAV99U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Connected in series • Internal galvanic isolated diodes 3 in one package C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99U A7s
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Original
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PDF
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BAV99U
VPW09197
EHA07287
Jun-29-2001
EHB00078
EHB00075
BAV99U
SC74
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Original
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PDF
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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car battery charger
Abstract: NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode
Text: L1 Vin Vout C1 D1 Q1 ON/OFF C2 FETKY GND GND L1 Vin Vout FETKY C1 Typical Uses for FETKY Devices Vin ON/OFF GND C1 ON/OFF Q1 D1 C2 Vout Q1 C2 GND R1 Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse
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SGD524/D
car battery charger
NTHD4N02
NTHD4P02
NTLJF3117P
NTLJF3118N
NTLJF4156N
NTMSD3P102
NTMSD3P303
NTMSD6N303
mosfet with schottky body diode
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BAW56
Abstract: BAW56DW
Text: BAW56DW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY NEW PRODUCT Features • · · · · Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Two “BAW56” Circuits In One Package SOT-363 A C2 C2
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BAW56DW
BAW56"
OT-363
OT-363,
MIL-STD-202,
150mA
DS30146
BAW56
BAW56DW
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Untitled
Abstract: No abstract text available
Text: BAW56DW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY NEW PRODUCT Features • · · · · Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Two “BAW56” Circuits In One Package SOT-363 A C2 C2
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Original
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PDF
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BAW56DW
BAW56"
OT-363
OT-363,
MIL-STD-202,
Chara75V
DS30146
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode
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OCR Scan
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PDF
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Q62702-A1030
OT-323
5B35bDS
BAV70W
flE35b05
012040D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode num m Type Marking Ordering Code Pin Configuration BAW 56W A1s Q62702-A1031 1 =C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Symbol Parameter
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OCR Scan
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PDF
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Q62702-A1031
OT-323
H35bQS
S53Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 51-07 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY 51-07 HHs Q62702- 1 =C1 2 = C2 Package CM Pin Configuration II Ordering Code
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OCR Scan
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PDF
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Q62702-
OT-143
B235b05
G12DMfiT
0235bQ5
053SbDS
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