6A1 diode
Abstract: 7006S VPS05604
Text: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking
|
Original
|
PDF
|
70-06S
VPS05604
EHA07288
OT-363
EHB00042
EHB00043
EHB00044
EHB00045
Oct-07-1999
6A1 diode
7006S
VPS05604
|
EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
|
Original
|
PDF
|
VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
|
Untitled
Abstract: No abstract text available
Text: BAV 70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration
|
Original
|
PDF
|
VPW09197
EHA07182
SC-74
Oct-07-1999
EHB00068
EHB00065
|
Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
|
Original
|
PDF
|
BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
|
BAV99T
Abstract: SC75
Text: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAV99T
VPS05996
EHA07181
Jun-29-2001
EHB00078
EHB00075
BAV99T
SC75
|
bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
|
Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
|
A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
|
VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
|
BAW56U
Abstract: SC74
Text: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration
|
Original
|
PDF
|
BAW56U
VPW09197
EHA07288
Jun-29-2001
EHB00093
EHB00090
BAW56U
SC74
|
6A1 diode
Abstract: BAW56S VPS05604
Text: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s
|
Original
|
PDF
|
VPS05604
EHA07288
OT-363
Oct-08-1999
EHB00093
EHB00090
6A1 diode
BAW56S
VPS05604
|
BAV70U
Abstract: SC74 10325v
Text: BAV70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration
|
Original
|
PDF
|
BAV70U
VPW09197
EHA07182
Jul-06-2001
EHB00068
EHB00065
BAV70U
SC74
10325v
|
BAW56S
Abstract: 6A1 diode VPS05604
Text: BAW56S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Common anode Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration
|
Original
|
PDF
|
BAW56S
VPS05604
EHA07288
OT363
Jul-05-2001
EHB00093
EHB00090
BAW56S
6A1 diode
VPS05604
|
6A1 diode
Abstract: No abstract text available
Text: BAW 56U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Common anode Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration
|
Original
|
PDF
|
VPW09197
EHA07288
SC-74
Oct-08-1999
EHB00093
EHB00090
6A1 diode
|
|
|
SC-75
Abstract: VPS05996
Text: BAV 99T Silicon Switching Diode Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV 99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC-75 Maximum Ratings Parameter
|
Original
|
PDF
|
VPS05996
EHA07181
SC-75
Oct-08-1999
EHB00078
EHB00075
SC-75
VPS05996
|
APCD-780-06-C2
Abstract: No abstract text available
Text: APCD-780-06-C2 TECHNICAL DATA IR diode laser module APCD-780-06 is a multi purpose, lowest cost, small size infrared diode laser module featuring a acrylic housing with embedded lens, and integrated APC circuitry for long time stable operation Features •
|
Original
|
PDF
|
APCD-780-06-C2
APCD-780-06
APCD-780-06-C2
|
APCD-780-01-C2
Abstract: No abstract text available
Text: APCD-780-01-C2 TECHNICAL DATA Infrared diode laser module APCD-780-01 is a multi purpose small size infrared diode laser module featuring a fixfocus acrylic lens, with integrated APC circuitry for long time stable operation Features • • • • • •
|
Original
|
PDF
|
APCD-780-01-C2
APCD-780-01
APCD-780-01-C2
|
car battery charger
Abstract: NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode
Text: L1 Vin Vout C1 D1 Q1 ON/OFF C2 FETKY GND GND L1 Vin Vout FETKY C1 Typical Uses for FETKY Devices Vin ON/OFF GND C1 ON/OFF Q1 D1 C2 Vout Q1 C2 GND R1 Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse
|
Original
|
PDF
|
SGD524/D
car battery charger
NTHD4N02
NTHD4P02
NTLJF3117P
NTLJF3118N
NTLJF4156N
NTMSD3P102
NTMSD3P303
NTMSD6N303
mosfet with schottky body diode
|
BAW56
Abstract: BAW56DW
Text: BAW56DW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY NEW PRODUCT Features • · · · · Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Two “BAW56” Circuits In One Package SOT-363 A C2 C2
|
Original
|
PDF
|
BAW56DW
BAW56"
OT-363
OT-363,
MIL-STD-202,
150mA
DS30146
BAW56
BAW56DW
|
VSO05561
Abstract: A7s marking diode
Text: BAV 99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol
|
Original
|
PDF
|
VSO05561
EHA07181
OT-323
Oct-08-1999
EHB00078
EHB00075
VSO05561
A7s marking diode
|
APCD-780-07-C2
Abstract: No abstract text available
Text: APCD-780-07-C2 TECHNICAL DATA IR diode laser module APCD-780-07 is a multi purpose small size infrared diode laser module featuring a fixfocus acrylic lens, with integrated APC circuitry for long time stable operation Features • • • • • • • Small size Ø 3.3 x 8.0 mm
|
Original
|
PDF
|
APCD-780-07-C2
APCD-780-07
APCD-780-07-C2
|
Untitled
Abstract: No abstract text available
Text: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
|
Original
|
PDF
|
VPW09197
EHA07291
SC-74
Apr-21-1999
EHB00025
EHB00022
|
6A1 diode
Abstract: marking code 76s 7006S 6A1 MARKING
Text: SIEMENS BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment A1/A2 2 C2 1 . R FI Type Marking
|
OCR Scan
|
PDF
|
70-06S
VPS05604
Q62702-A3469
OT-363
100ns)
6A1 diode
marking code 76s
7006S
6A1 MARKING
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
|
OCR Scan
|
PDF
|
Q62702-A3466
OT-343
EHN00019
100ns,
|
