BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT277
E50151
C1686
C1679
C1243
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT270
MCT270
2500VAC
3000VAC
E50151
C2090
C1681
C1682
C1683
C1684
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C1684 r
Abstract: C1684R C1680 C1685 R transistor
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~
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MCT274
MCT274
E50151
C2090
C1681
C1682
C1684
C1683
100/is
C1685
C1684 r
C1684R
C1680
C1685 R transistor
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C1681
Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35
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MCT272
MCT272
Ratio--75%
time--10
E50151
C2090
C1683
C1684
C1294
C1681
transistor c1684
c1685
NPN C1685
transistor t051
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C1243
Abstract: C2090
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86
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MCT276
MCT276
E5015CAL
C1686
C1679
C1680
C1243
C1243
C2090
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MCA255
Abstract: C1894 C2090 MCA230 MCA231 Quality Technologies optocouplers
Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 PACKAGE db dh .Æ DESCRIPTION r- 6.86 6.3S o The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington
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ri-78TYP
C2090
C2084
MCA230
MCA231
MCA255
MCA230,
MCA230/255
C1894
Quality Technologies optocouplers
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4N35 QUALITY TECHNOLOGIES
Abstract: 4n35 equivalent C1684 r .85 transistor
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86
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E50151
TYP20
C1685
C1296A
C1294
4N35 QUALITY TECHNOLOGIES
4n35 equivalent
C1684 r .85 transistor
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C 1153
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT210 PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%,
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MCT210
MCT210
MCT210--150%
C2090
C12S4
C 1153
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MCA255
Abstract: MCA230 mca231 MCA255 equivalent
Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic
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MCA230
MCA231
MCA255
MCA230,
MCA255
MCA230/255
C2090
MCA255 equivalent
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transistor C2075
Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from
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74bbasi
H11A1
H11A1Z
H11A1
E50151
MCT9001
transistor C2075
g10 smd transistor
SMD Transistor 1c
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C1303
Abstract: LF 358 C1251 C1298 C2079 C2090 MCT272
Text: DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide Infrared emitting diode is selectively coupled with an NPN silicon phototransistor. t 6.86 .270 6.35 (.250) _ —•—j ‘ 1 8.89 (.350)
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MCT272
C2090
C2079
MCT272
389Q128,
CI302
C1303
-C1293
C1303
LF 358
C1251
C1298
C2090
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Untitled
Abstract: No abstract text available
Text: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled
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H11D1/1Z
H11D2/2Z
H11D3/3Z
H11DX
H11D1-D2,
H11D3,
H11D1,
H11D2,
H11D3--
C1774
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4N25 APPLICATION NOTE
Abstract: 4N25 RFT 100k
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS ffc rft cii The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. WWW FEATURES & APPLICATION!
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E50151
C1685
C1296A
C1294
4N25 APPLICATION NOTE
4N25
RFT 100k
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C1685 transistor
Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic
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H11A1
H11A1Z
E50151
C2090
C1683
C1684
C1685
C1296A
C1685 transistor
C1685 R transistor
H11A1Z
transistor c1684
TRANSISTOR C1685
transistor c2090
C1685
C1682 transistor
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MOC3021 equivalent
Abstract: mcp3020
Text: m NON-ZERO-CROSSING TRIACS OPTOELECTRONICS II MCP3020 MCP3021 MCP3022 PACKAG E DIMENSIONS DESCRIPTION The MCP3020, MCP3021 and MCP3022 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which
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MCP3020
MCP3021
MCP3022
MCP3020,
MCP3021
MCP3022
MOC3020,
MOC3021
74bbflSl
QDbl07
MOC3021 equivalent
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Untitled
Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74tibfiSl
Q003541
MCT274
MCT274
C2090
C2079
MCT9001
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Optocoupler IC MCT2E
Abstract: MCT2E equivalent optocoupler mct2e ic MCT2e
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2E PACKAGE DIMENSIONS t 6.86 DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. r* 6.35 O I W W L-w FEATURES A APPLICATIONS 8.89
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E50151
C2090
Optocoupler IC MCT2E
MCT2E equivalent
optocoupler mct2e
ic MCT2e
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c1685
Abstract: C1683 C1680 C1294 C1296A
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2 ;e DESCRIPTION d im en sio n s The M C T 2 is a N P N silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. ft ft & O FEATURES & APPLICATIONS 8.89 1.78 REF 8.38
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C2090
E50151
C2079
C1294
c1685
C1683
C1680
C1294
C1296A
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C2090
Abstract: MCP3010
Text: QUALITY TECHNOLOGIES NON-ZERO-CROSSING TRIACS 1 l MCP3009* MCP3010 MCP3011 PACKAGE DIMENSIONS ft ft ft "WWW 8.89 1.78 REF DESCRIPTION The MCP3009, MCP3010 and MCP3011 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon
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MCP3009*
MCP3010
MCP3011
MCP3009,
MCP3011
MCP3011)
MOC3009,
C1690
C1691
C2090
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES • MCT271 The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r f t tSi rSi t 6.86 ww ' 6.35 1 _ 8.89 ■ Controlled Current Transfer Ratio— 45% to 90%
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MCT271
MCT271
C2090
E50151
C1681
C1682
C1684
C1683
C1296A
C1294
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