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    DIODE CROSS REFERENCE 1N4245 Search Results

    DIODE CROSS REFERENCE 1N4245 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE CROSS REFERENCE 1N4245 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    diode A14A surface mount

    Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
    Text: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling


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    PDF MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD640CT MBRD660CT VHE205 VHE210 diode A14A surface mount SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


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    PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    1N1743

    Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
    Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:


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    PDF 1N225 1N2260) 1N227 1N228 1N229 1N230O) 1N231d) 1N232 BZX83 BZX97 1N1743 IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465

    d137 smd diode

    Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
    Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D


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    PDF D0204AP 00201AP D0204AP RGP15J RGP15K RGP15M BYV95C BYV96D BYV96E d137 smd diode rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135

    FEP5dt

    Abstract: 1N5614 smd gi1303 GI1301 FEP16GT N645
    Text: GENL INSTR/ POUER 2SE D • 30*10137 DGG3331 T ■ FAST EFFICIENT RECTIFIERS continued 5.0 H (A) PKG TYPE c P20 64 6.0 T0-22CT CHIP G4 k > r 1Ì VRRM (volts) 1a l i l i 50 EGP50A. FE5A FEP5AT EFR5A GI1301 FE6A 100 EGP50B FE5B FEP5BT EFR5B Gl 1302 FE6B 150


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    PDF DGG3331 T0-22CT EGP50A. EGP50B EGP50C EGP50D EGP50F GI1301 GI1303 GI1304 FEP5dt 1N5614 smd FEP16GT N645

    kpbc10

    Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
    Text: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A


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    PDF GL-34 D0204MB MPG06 BYM05-50 MPG06A# 1N483B GL34A GP08A kpbc10 diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041

    B80 c1500 bridge rectifier

    Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
    Text: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247


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    PDF 3fl1D137 DD03333 C800DM C800DM DF005M DF01M DF02M 0F04M B80 c1500 bridge rectifier c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H

    DIODE byx55 100

    Abstract: efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD
    Text: GENL INSTR/ POWER ESE D • 30T0Í37 0 0 Q 3 3 n T ■ 7^ Fast Recovery Silicon Rectifiers General Instrument’s selection of fast recovery rectifiers are designed fo r circuits requiring switching times of 150ns to 500ns. They are offered in a variety of


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    PDF 150ns 500ns. GL-34 RGL34A RMPG06A# RMPG06B» RGP10A RGL34B BYM06-100 DIODE byx55 100 efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD

    diode BY127

    Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


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    PDF 00D3315 D041/D015 D0204/ GP10A BYW27-50 1N4Q017 M100A GP10B 8YW27-1O0 1N4002 diode BY127 BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE

    diode BY127 specifications

    Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


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    PDF 00G3315 D041/D015 D0204/VP GP10A GP10B GP10D BYW27-50 BYW27-100 BYW27-200 BY135GP diode BY127 specifications GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245

    smd diode E7

    Abstract: sch550 SCH360 gp20 diode T0-220CT MBR2 SCH530
    Text: GENL I N S T R / POLIER 2 SE D • 30^0137 G0 D3 3 E7 fi SCHOTTKY RECTIFIERS continued B (A) PKG T Y P E 16 20 T0-3P T0-220CT 30 T0-220CT T0-3P "ì i f VRRM [volts) i l l 20 30 MBR2035CT 35 40 SBL3030PT SBL1630PT MBR3035PT SBL3040PT SB L1640PT MBR2045CT


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    PDF T0-220CT SBL3030PT SBL1630PT MBR2035CT MBR2535CT MBR3035PT L1640PT SBL3040PT MBR2045CT smd diode E7 sch550 SCH360 gp20 diode T0-220CT MBR2 SCH530

    RKBU4B

    Abstract: B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode DD0333S kbu8k 304 GENERAL INSTRUMENT b80
    Text: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SINGLE PHASE BRIDGE RECTIFIERS continued PGK T Y P E 4.0 3.0 IM A ) 5.0 BC KB PC1 6.0 KBU KB PC6 f VRRM (volts) 50 K B P C 10 0 5 B40 C 3 700 /2200 K B L0 0 5 ff KBU4A RKBU4A B40 C 5000/3300 KBU6A# KB PC6005


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    PDF DD0333S PC6005 RKBPC600 C5000/3300 RKBPC601 C3700 C5000/330Q RKBPC602 RKBPC604 RKBU4B B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode kbu8k 304 GENERAL INSTRUMENT b80

    diode SB560

    Abstract: SBL540CT 1N5819 smd diode gp20 diode JTX 1N5822 1N5822 MELF Diode sb160 SBL530CT KPBC10
    Text: GENL INSTR/ POWER 55E » • /- 9 /- & 0 3fl1Dl'37 0003325 4 ■ Schottky Rectifiers General Instrum ent S chottky Barrier Recti­ fiers are characterized by high sw itching speeds and low forw ard voltage drops. A diffused Guard Ring process allows fo r reverse


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    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


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    PDF 1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C