d3s diode
Abstract: DIODE D3S 90 DIODE d3s D3S 50 D3SB10 D3SB10 20 Diode B60 d3s 04 diode d3s 15 D3SB80
Text: High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique
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UL94V-O
MIL-STD-202,
d3s diode
DIODE D3S 90
DIODE d3s
D3S 50
D3SB10
D3SB10 20
Diode B60
d3s 04 diode
d3s 15
D3SB80
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DIODE D3S 90
Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
Text: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16
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O-252-2L)
O-252-3L)
O-263/D2PAK
O-263/D2PAK
O-268
DIODE D3S 90
BC 247 sot-23
d2s diode
DIODE d3s
TRAY DIMENSIONS SOIC16
tape & reel
d3s diode
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d3s diode
Abstract: d3s schottky Ic d3s DIODE D3S 90
Text: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies
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22kHz
HUF75345P3
HUF75344P3
HRF3205
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
HUF75329P3
HUF75345S3/S3S
d3s diode
d3s schottky
Ic d3s
DIODE D3S 90
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SFS9634
Abstract: p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode
Text: SFS9634 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA Max. @ VDS= -250V
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-250V
SFS9634
SFS9634
p-channel 250V power mosfet
DIODE D3S 90
Power MOSFET P-Channel 250V 50A
d3s diode
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier
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1435B
IRF7311
char25
C-119
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Untitled
Abstract: No abstract text available
Text: PM4550J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Sw itching Features • • • • • • • • Equipped with Power M OS FET L ow on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode between source and drain
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PM4550J
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK483-60A
OT223
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy rated_ _ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHX4N60E
OT186A
PHX4N60E
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IRF9410
Abstract: No abstract text available
Text: International I"R Rectifier P D -9.1562A PRELIMINARY IRF9410 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V dss = 30V R ds oh = 0.030É2
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IRF9410
IRF7403
IRF7413
IRF7603
IRF9410
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irl1004
Abstract: RF1010
Text: PD - 9.1702 International IÖ R Rectifier IRL1004 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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PD916
Abstract: No abstract text available
Text: PD-9.1615A International TOR Rectifier FA38SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance
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IRL2910 equivalent
Abstract: 2D 1002 diode EA MOSFET 63 ng
Text: PD - 9.1384B In te rn a tio n a l IOR Rectifier IRLI2910 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm
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1384B
IRLI2910
IRL2910 equivalent
2D 1002 diode
EA MOSFET 63 ng
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DIODE D3S 69
Abstract: TO-22DAB source code park transform
Text: PD -9.1671 International IÖR Rectifier IRFZ44E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 60V RüS on = 0 .02 3 Í 2 Id = 48A Description Fifth Generation HEXFETs from International Rectifier
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IRFZ44E
O-22C)
DIODE D3S 69
TO-22DAB
source code park transform
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2D 1002 diode
Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Text: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier
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OT-23.
2D 1002 diode
d3s marking
DIODE D3S 90
MARKING tAN SOT-23 diode
MARKING tAN SOT-23
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DIODE D3S 5D
Abstract: No abstract text available
Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1673A International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier
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Untitled
Abstract: No abstract text available
Text: P D -9.1673 International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier
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Untitled
Abstract: No abstract text available
Text: PD - 9.1361A International TOR Rectifier IRFI540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 100 V
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IRFI540N
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DIODE D3S 5D
Abstract: diode D3s IRFZ3
Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
diode D3s
IRFZ3
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DIODE D3S 90
Abstract: No abstract text available
Text: LF3347 □ FV IC E S IN C O R P Q R A T F D High-Speed Image Filter with Coefficient RAM FEATURES □ 83 MHz Data Input and Compu tation Rate □ Four 12 x 12-bit Multipliers with Individual Data and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks
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LF3347
LF3347
12-bit
32-bit
DIODE D3S 90
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Untitled
Abstract: No abstract text available
Text: PD - 9.1497A International IÖR Rectifier IRLI540N P R E L IM IN A R Y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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IRLI540N
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DIODE D3S 90
Abstract: No abstract text available
Text: P D - 9 .1 6 4 4 Internationa lO R Rectifier IRL1004S/L PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount IRL1004S • Low-profile through-hole (IRL1004L) • Advanced Process Technology • Surface Mount • Ultra Low On-Resistance
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IRL1004S/L
IRL1004S)
IRL1004L)
DIODE D3S 90
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DIODE d3s 57
Abstract: D3S 57 diode
Text: PD - 9.1362A International TOR Rectifier IRFI 520 N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description
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Eimac 3cx1500a7
Abstract: 3cx1500 3cx1500a7 3cx1500*a7 3cx1500a SK-2220 3CX1500U7 SK-2221-60 SK222 3CX1500A7/8877
Text: 8 9 6 2 _ 7 UHF HIGH-MU TRANSMITTING TRIODE The EIMAC 8962/3CX1500U7 is designed for use above 20Q MHz as a CW, pulse, or linear rf amplifier. This high-mu triode is designed withj beam-forming cathode and control grid geometry. It is of all metal/ceramic construction, with an
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8962/3CX1500U7
HIB31KH
3CX1500U7
Eimac 3cx1500a7
3cx1500
3cx1500a7
3cx1500*a7
3cx1500a
SK-2220
SK-2221-60
SK222
3CX1500A7/8877
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